Berry phase and shot noise for spin-polarized and entangled electrons

Shot noise for entangled and spin-polarized states in a four-probe geometric setup has been studied by adding two rotating magnetic fields in an incoming channel. Our results show that the noise power oscillates as the magnetic fields vary. The singlet, entangled triplet and polarized states can be distinguished by adjusting the magnetic fields. The Berry phase can be derived by measuring the shot noise power.     

Scattering of a relativistic scalar particle by a cusp potential

We solve the Klein–Gordon equation in the presence of a spatially one-dimensional cusp potential. The scattering solutions are obtained in terms of Whittaker functions and the condition for the existence of transmission resonances is derived. We show the dependence of the zero-reflection condition on the shape of the potential. In the low-momentum limit, transmission resonances are associated with half-bound states. We express the condition for transmission resonances in terms of the phase shifts.     

Study for noise reduction in synchrotron radiation based scanning tunneling microscopy by developing insulator-coat tip

To solve difficulties of instability and inaccuracy in synchrotron radiation based scanning tunneling microscopy, a method to reduce noise was investigated. New insulator-coat tips were developed to shut out electrons coming from a wide area that damage the spatial resolution. By changing the exposed conductive area at the end of the insulator-coat tips, the effect of noise reduction was estimated. The tip with an exposure area of 50 nm in diameter was found to reduce noise effectively. Also a key discriminating condition was found to obtain the local signal, which is based on the modulation of the X-ray-induced tip current caused by excitation of the specific element.     

ZnSe sintered films: Growth and characterization

The II-VI compound semiconductor, ZnSe having wide band gap between 2.58 and 2.82 eV is a promising material for use in photovoltaic devices, blue light emitting diodes and laser diodes. Several methods have been used to prepare ZnSe thin films. We have deposited ZnSe films on ultra-clean glass substrate by sintering technique. The optical, structural and electrical properties of ZnSe thin films have been examined. The optical band gap of these films is studied using reflection spectra in wavelength range 325-600 nm and structure of these films is studied using XRD. The DC conductivity of the films was measured in vacuum by two-probe technique.Sintering is a very simple and viable method compared to other intensive methods. The results of the present investigation will be useful in characterizing the material ZnSe for its applications in photovoltaics.     

Growth of Fe on Ge(1 1 1) at room temperature studied by X-ray photoelectron diffraction

The growth of ultrathin Fe films of various coverages on Ge(1 1 1) at room temperature using molecular beam epitaxy (MBE) was studied via X-ray photoelectron diffraction (XPD or XPED) together with low energy electron diffraction (LEED) and X-ray photoelectron spectroscopy (XPS). All experimentally observed XPD patterns suggested local order structures of the Fe layers for all thicknesses studied. The short-range order of the resulting structures was found to be enhanced for thinner layers whereas the long-range order was gradually lost with increasing Fe thicknesses. At a very low coverage of 0.8 Å Fe and Ge tend to react to the partly ordered structure in which Fe atoms were located in local environments similar to those for higher Fe coverages. Comparison of theoretical and experimental XPD patterns, along with XPS results, showed that intermixing between Fe and Ge occurred during the pseudomorphic growth with a stacking fault near the interface for all Fe coverages under study. Nevertheless, small percentage of domains without the stacking fault was also found to coexist with those with the stacking fault by performing a quantitative analysis of a reliability factor R of the Fe2p pattern for 5.4 Å. The orientation changes of the Ge2p and Ge3d XPD patterns with Fe thickness were unambiguously explained in terms of their different dependencies on the overlayer thickness due to the different inelastic mean free path lengths used in the simulations. Also, Fe got increasingly enriched in the grown layers with increased Fe coverage. The resulting structures and intermixing are discussed in detail.     

Effects of E2 and El-E2 Interference on Coulomb Dissociation of 19C

We investigate the effects of higher order multipole transitions, in particular electric quadrupole （E2） and El-E2 interference, on the Coulomb dissociation of 19 C within the framework of the first order eikonal approximation. The sensitivity of the total Coulomb breakup cross section and the longitudinal momentum distribution of the core fragment to these effects are checked. The breakup occurs predominately through the dipole transition and the contribution of E2 transition to the total cross section is found to be within the range from 1 to 3% of that of El. It is further observed that the El-E2 interference term contributes nothing to the integrated cross section. On the other hand, the longitudinal momentum distribution is observed to be insensitive to the E2 transition while the El-E2 interference introduces a small asymmetry in its shape.     

Novel solutions to the combined dispersion equation

In this Letter, the combined dispersion equation was solved by the sub-equation method. It is shown that the combined dispersion equation with the special parameters can be solved and many novel solutions will derived in terms of Jacobi elliptic functions, where some known solutions will be recovered when the modulus arrives its limiting value.     

Molecular dynamics simulation comparison of atomic scale intermixing at the amorphous Al2O3/semiconductor interface for a-Al2O3/Ge, a-Al2O3/InGaAs, and a-Al2O3/InAlAs/InGaAs

The structural properties of a-Al₂O₃/Ge, a-Al₂O₃/In_0.5Ga_0.5As and a-Al₂O₃/In_0.5Al_0.5As/InGaAs interfaces were investigated by density-functional theory (DFT) molecular dynamics (MD) simulations. Realistic a-Al₂O₃ samples were generated using a hybrid classical-DFT MD “melt and quench” approach. The interfaces were formed by annealing at 700 K/800 K and 1100 K with subsequent cooling and relaxation. The a-Al₂O₃/Ge interface demonstrates pronounced interface intermixing and interface bonding exclusively through Al–O–Ge bonds generating high interface polarity. In contrast, the a-Al₂O₃/InGaAs interface has no intermixing, Al–As and O–In/Ga bonding, low interface polarity due to nearly compensating interface dipoles, and low substrate deformation. The a-Al₂O₃/InAlAs interface demonstrated mild intermixing with some substrate Al atoms being adsorbed into the oxide, mixed Al–As/O and O–Al/In bonding, medium interface polarity, and medium substrate deformation. The simulated results demonstrate strong correlation to experimental measurements and illustrate the role of weak bonding in generating an unpinned interface for metal oxide/semiconductor interfaces.     

Effect of geometry on magnetization distortion in closed-circuit magnetic measurements

The effect of specimen geometry on magnetization distortion in closed-circuit measurements is reported in this letter. The degree of the distortion increases as the ratio of length to diameter (L/D) of specimen decreases, and the distortion can reduce the magnetization values as much as 42% when the applied magnetic field is 24 kOe and the L/D is 0.28. The type of magnetic material also affects the distortion. Although the phenomenon seems to be similar to the “image effect” that occurs in open-circuit measurements, reports of this effect in closed-circuit measurements have not been found in the literature. Further research effort, including 3D computer modeling, for understanding this magnetic phenomenon is underway and will be reported later.     

Interface control of high-k gate dielectrics on Ge

Important progress has been made in the passivation of Ge/gate dielectric interfaces. One important approach is by thermally oxidized GeO₂ interface and ALD high-k layers, with an interface state density D_it ∼ 2 × 10¹¹ cm⁻² eV⁻¹. Another approach is with an epi-Si/SiO₂ interface, resulting in similar D_it. Hysteresis and V_th shift, however, are still not optimal. Extensive material characterization and theoretical insights help us understanding the root cause of these remaining issues and show the way to improved interface control.