Cooperation and charity in spatial public goods game under different strategy update rules

Human cooperation can be influenced by other human behaviors and recent years have witnessed the flourishing of studying the coevolution of cooperation and punishment, yet the common behavior of charity is seldom considered in game-theoretical models. In this article, we investigate the coevolution of altruistic cooperation and egalitarian charity in spatial public goods game, by considering charity as the behavior of reducing inter-individual payoff differences. Our model is that, in each generation of the evolution, individuals play games first and accumulate payoff benefits, and then each egalitarian makes a charity donation by payoff transfer in its neighborhood. To study the individual-level evolutionary dynamics, we adopt different strategy update rules and investigate their effects on charity and cooperation. These rules can be classified into two global rules: random selection rule in which individuals randomly update strategies, and threshold selection rule where only those with payoffs below a threshold update strategies. Simulation results show that random selection enhances the cooperation level, while threshold selection lowers the threshold of the multiplication factor to maintain cooperation. When charity is considered, it is incapable in promoting cooperation under random selection, whereas it promotes cooperation under threshold selection. Interestingly, the evolution of charity strongly depends on the dispersion of payoff acquisitions of the population, which agrees with previous results. Our work may shed light on understanding human egalitarianism.     

Hydrostatic pressure effect on the metal-insulator transition in LaO0.7Ca0.3Mn1−x(Fe/Ge)xO3 perovskites

Abstract

The temperature dependences of the resistivity of La_0.7Ca_0.3Mn_1?xFe_xO₃ and La_0.7Ca_0.3Mn_1?xFe_xO₃ (0 < × < 0.04) mixed crystals were studied under hydrostatic pressures up to 15kbar. The substitution of Fe for Mn results in an increase of the resistivity and a continuous decrease of the metal-insulator transition temperature T_mi while the substitution of Ge for Mn leads to a more complicated T_mi(x)-curve. In all cases T_mi shifts under pressure with a rate between 1.6 and 2.9K/kbar and a correlation between T_mi and its pressure derivative dT_mi/dP is observed which is in accordance with the general trend of dT_mi/dP versus T_mi as derived for other manganites and is discussed in terns of a competition between superexchange and double exchange.     

Microwave-absorbing properties of NiCoZn spinel ferrites

In this paper, the microwave-absorbing properties of (Ni_1−x−yCo_xZn_y)Fe₂O₄ spinel ferrites have been investigated within the frequency range of 0.5–14 GHz. There are two kinds of resonance peaks observed in the permeability spectra: domain-wall resonances at lower frequency and spin-rotation resonances at higher frequency. The reflection loss (RL) calculations show that the prepared NiCoZn spinel ferrites are good electromagnetic (EM) wave absorbers in microwave range. In terms of the absorbing frequency band (AFB) and the matching thickness (t_m), (Ni_0.407Co_0.207Zn_0.386)Fe₂O₄ shows the best performances: t_m=3.15 mm and the AFB is 8.64–11.2 GHz. Decreasing the weight ratio of NiCoZn ferrites in ferrites/wax composites, the matching thickness decreases and the AFB shifts to higher frequencies. Compared with the absorbers with single-layer ferrites, the absorbers with double-layers ferrites have better absorbing performances, such as a thinner matching thickness and a wider EM wave AFB.     

Study of carrier concentration profiles in Al‐implanted Ge by micro‐Raman spectroscopy under different excitation wavelengths

The distribution profile of Al implanted in crystalline Ge has been investigated by micro‐Raman spectroscopy. Using different excitation laser lines, corresponding to different optical penetration depths, the Al concentration at different depths beneath the sample surface has been studied. We have found a strong correlation between the intensity of the Al–Ge Raman peak at ~370 cm⁻¹, which is due to the local vibrational mode of substitutional Al atoms, and the carrier concentration profile, obtained by the spreading resistance profiling analysis. A similar connection has been also observed for both shape and position of the Ge–Ge Raman peak at ~300 cm⁻¹. According to these experimental findings, we propose here a fast and nondestructive method, based on micro‐Raman spectroscopy under different excitation wavelengths, to estimate the carrier concentration profiles in Al‐implanted Ge. Copyright © 2013 John Wiley & Sons, Ltd.     

Birth and death in a continuous opinion dynamics model

We here discuss the process of opinion formation in an open community where agents are made to interact and consequently update their beliefs. New actors (birth) are assumed to replace individuals that abandon the community (deaths). This dynamics is simulated in the framework of a simplified model that accounts for mutual affinity between agents. A rich phenomenology is presented and discussed with reference to the original (closed group) setting. Numerical findings are supported by analytical calculations.     

Clusters in weighted macroeconomic networks: the EU case. Introducing the overlapping index of GDP/capita fluctuation correlations

GDP/capita correlations are investigated in various time windows (TW), for the time interval 1990–2005. The target group of countries is the set of 25 EU members, 15 till 2004 plus the 10 countries which joined EU later on. The TW-means of the statistical correlation coefficients are taken as the weights (links) of a fully connected network having the countries as nodes. Thereafter we define and introduce the overlapping index of weighted network nodes. A cluster structure of EU countries is derived from the statistically relevant eigenvalues and eigenvectors of the adjacency matrix. This may be considered to yield some information about the structure, stability and evolution of the EU country clusters in a macroeconomic sense.     

Fabrication of nanopatterned germanium surface by laser-induced etching: AFM, Raman and PL studies

Fabrication of the nanopatterned germanium (Ge) surface is done by laser-induced etching. Atomic force microscopy is utilized here to study the surface and sizes of Ge nanoparticles. Raman and photoluminescence (PL) spectroscopy have been used to characterize their vibrational and light emission properties. Wavelength-dependent Raman investigations of these nanopatterned Ge surface reveal spatial distribution of sizes of nanoparticles. Nanopatterned Ge structures (etched for 60 min) emit a broad PL band having two maxima at 2.1 and 2.35 eV.     

Atomistic study of GaSe/Ge(111) interface formed through van der Waals epitaxy

Layered materials can be grown on various substrates through van der Waals epitaxy (vdWE) regardless of lattice mismatch. The atomistic study of the film-substrate interface in vdWE is becoming increasingly important due to their expected applications as two-dimensional (2D) materials. In this contribution, we have grown GaSe thin films on Ge(111) substrates by molecular beam epitaxy and studied the GaSe/Ge(111) interface using high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). Cross-sectional HAADF-STEM observations revealed that the grown layers adopt predominantly the expected wurtzite-like structure and stacking, but layers with zinc-blende-like structure, similar to Ga₂Se₃ but apparently different, and other layer stacking sequences, exist locally near the film-substrate interface. These results demonstrate that even in vdWE, structural changes can occur in the grown layers adjacent to the substrate, highlighting the importance of such interface for synthesizing and applying ultimately thin 2D materials.     

The inverse problem in the case of bound states

We investigate the inverse problem for bound states in the D = 3 dimensional space. The potential is assumed to be local and spherically symmetric. The present method is based on relationships connecting the moments of the ground state density to the lowest energy of each state of angular momentum ?. The reconstruction of the density ρ(r) from its moments is achieved by means of the series expansion of its Fourier transform F(q). The large q-behavior is described by Padé approximants. The accuracy of the solution depends on the number of known moments. The uniqueness is achieved if this number is infinite. In practice, however, an accuracy better than 1% is obtained with a set of about 15 levels.The method is tested on a simple example, and applied to three different spectra.     

In situ monitoring of nucleation and evolution of Ge nanodots on faintly oxidized Si(1 1 1) surfaces

We have investigated the nucleation and evolution of germanium (Ge) nanodot (ND)s taking place while depositing Ge onto the silicon (Si) (1 1 1) surfaces with ultra-thin Si oxide films by using ultra-high vacuum in situ high-resolution transmission electron microscopy in the profile-imaging geometry. Various types of growth phenomena such as nucleation, growth and coalescence of Ge NDs have successfully been observed. The results show that the growth phenomena of the Ge NDs are dramatically rapid after their size reaches the size of the critical nucleus. The critical nucleus size estimated from a model using the cohesive energy of the Ge NDs has been consistent with observed one.