Assignment of chemical shifts in benzohydroxamic acid and structure of its silylated derivatives by 15N enrichment

¹⁵N isotopic enrichment was necessary for the unequivocal assignment of the ¹H NMR lines to the protons in the NH–OH fragment of benzohydroxamic acid, BHXA, C₆H₅CONHOH, in dry dimethyl sulfoxide solutions. The assignment [δ(NH) = 11.21, δ(OH) = 9.01, ¹J(¹⁵N,¹H) = 102.2 Hz, ²J(¹⁵N,¹H) <1.5 Hz], which is opposite to that used by other authors, confirms the assignment extended to BHXA by Brown and co‐workers from the spectra of acetohydroxamic acid. The enrichment allowed also assignment of the ²⁹Si lines in the spectra of disilylated benzohydroxamic acid, (Z)‐tert‐butyldimethylsilyl N‐tert‐butyldimethylsilyloxybenzoimidate (2) and (Z)‐tert‐butyldiphenylsilyl N‐tert‐butyldiphenylsilyloxybenzoimidate (3), and confirmed structure of the monosilylated products, N‐tert‐butyldiphenylsilyloxybenzamide (4) and N‐tert‐butyldiphenylsilyloxy benzoimidic acid (5). Copyright © 2003 John Wiley & Sons, Ltd.     

SiGe (Ge-dot) heterojunction phototransistors for efficient light detection at 1.3–1.55 μm

The aim of this work is to develop a Si/SiGe HBT-type phototransistor with several Ge dot layers incorporated in the collector, in order to obtain improved light detectivity at 1.3–1.55 μm. The MBE grown HBT detectors are of n–p–n type and based on a multilayer structure containing 10 Ge-dot layers (8 ML in each layer, separated by 60 nm Si spacer) in the base-collector junction. The transistors were processed for normal incidence or with waveguide geometry where the light is coupled through the edge of the sample. The measured breakdown voltage, BV_ceo, was about 6 V. Compared to a p–i–n reference photodiode with the same dot layer structure, photoconductivity measurements show that the responsivity is improved by a factor of 60 for normal incidence at 1.3 μm. When the light is coupled through the edge of the device, the detectivity is even further enhanced. The measured photo-responsivity is more than 100 and 5 mA/W at 1.3 and 1.55 μm, respectively.     

Flicker noise in degenerately doped Si single crystals near the metal-insulator transition

In this paper we report some of the important results of experimental investigations of the flicker noise near the metal-insulator (MI) transition in doped silicon single crystals. This is the first comprehensive work to study low-frequency noise in heavily doped Si over an extensive temperature range (2 K<T<500 K). The measurements of conductance fluctuations (flicker noise) were carried out in the frequency range 10⁻²<f<4 × 10¹ Hz in single crystalline Si across the MI transition by doping with phosphorous and boron. The magnitude of noise in heavily doped Si is much larger than that seen in lightly doped Si over the whole temperature range. The extensive temperature range covered allowed us to detect two distinct noise mechanisms. At low temperatures (T<100 K) universal conductance fluctuations (UCF) dominate and the spectral dependence of the noise is determined by dephasing the electron from defects with two-levels (TLS). At higher temperatures (T>200 K) the noise arises from activated defect dynamics. As the MI transition is approached, the 1/f spectral power, typical of the metallic regime, gets modified by the presence of discrete Lorentzians which arise from generation-recombination process which is the characteristic of a semiconductor.     

Nuclear spin-lattice relaxation mechanisms in kaolinite confirmed by magic-angle spinning

Spin-lattice relaxation mechanisms in kaolinite have been reinvestigated by magic-angle spinning (MAS) of the sample. MAS is useful to distinguish between relaxation mechanisms: the direct relaxation rate caused by the dipole-dipole interaction with electron spins is not affected by spinning while the spin diffusion-assisted relaxation rate is. Spin diffusion plays a dominant role in ¹H relaxation. MAS causes only a slight change in the relaxation behavior, because the dipolar coupling between ¹H spins is strong. ²⁹Si relaxes directly through the dipole-dipole interaction with electron spins under spinning conditions higher than 2 kHz. A spin diffusion effect has been clearly observed in the ²⁹Si relaxation of relatively pure samples under static and slow-spinning conditions. ²⁷Al relaxes through three mechanisms: phonon-coupled quadrupole interaction, spin diffusion and dipole-dipole interaction with electron spins. The first mechanism is dominant, while the last is negligibly small. Spin diffusion between ²⁷Al spins is suppressed completely at a spinning rate of 2.5 kHz. We have analyzed the relaxation behavior theoretically and discussed quantitatively. Concentrations of paramagnetic impurities, electron spin-lattice relaxation times and spin diffusion rates have been estimated.     

A Novel Method to Synthesize Polyorganozircosilazane

A new kind of polyorganozircosilazane as Si/Zr/C/N-based ceramic precursor was synthesized from the condensation reaction of hexamethyleyclotrisilazane lithium salts(D3^NLi）and zirconium tetrachloride(ZrCl4).In the presence of N,N,N’,N’-tetramethyl ethylene diamine(TMEDA),polyorganozircosilazane was obtained in high yield.     

La2O3-Mo5Si3/MoSi2复合材料的高温氧化行为

研究了0．8％La2O3-MosSi3／MoSi2复合材料在1200℃空气中的高温氧化行为。结果表明：0．8％稀土和MoSi3的加入，使材料的抗氧化性能降低。MosSi3含量越高，材料的抗氧化性能越差。当MosSi3含量低于30％时，在氧化初始阶段，质量变化呈直线下降，随着氧化的进行，氧化逐渐增重，材料表面形成较致密的SiO2阻止了材料的进一步氧化，使得氧化增重较小。而0．8％La2O3-40％Mo5Si3／MoSi2复合材料却出现了“粉化”现象。0．8％La2O3．MosSi3／MoSi2复合材料抗氧化性能的降低，归因于Mo5Si3差的抗氧化性和材料致密度的降低；另外，稀土和Mo5Si3的加入，细化了材料的晶粒，使晶界面积增加，加速了氧在晶界中的扩散，促进了材料的氧化。     

Si5H3,Si5H6,Si5Li3及Si5Na3原子簇结构的理论研究

利用Gaussian-94计算程序中的B3LYP方法，在6—311 G(2d)6d基组下，对Si5，Si5H3，Si5H6，Si5Li3和Si5Na33原子簇的几何结构进行优化和频率计算．结果表明，Si5原子簇中最稳定的具有D3h对称性的结构中，位于同一平面上的3个Si原子确实具有剩余的成键能力，可以与3个H，Li，Na原子和6个H原子形成稳定的化合物．研究还发现，虽然H，Li和Na都属同一主族，但它们与Si5原子簇中Si原子的键连方式却不同，而且它们的加入，对Si5原子簇的“三角双锥”结构也有不同的影响．     

氢化物－气相色谱的元素光度检测器

研究开发的一种新型的元素光度检测器主要用于锗、砷、锡和锑的氢化物气相色谱检测，具有高灵敏，高选择性。它是在普通火焰光度检测器的基础上加装了特制的滤光片改制而成的。对锗、砷、锡和锑的检测限分别为３．０×１０￣（－１１）ｇ、７．０×１０￣（－１１）ｇ、７．０×１０￣（－１０）ｇ和１．１×１０￣（－８）ｇ，相对标准偏差分别为１．８％、２．４％、２．６％和３．０％。     

荧光法研究Ge-132对牛血清白蛋白Maillard反应的抑制作用

人体内氨基酸及蛋白质的非酶糖化反应(Maillard反应)与糖尿病及其并发症的关系已经引起广泛注意[1].有机锗化合物β-羧乙基锗倍半氧化物(Ge-132)具有预防糖尿病及调节糖代谢的作用[2].