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111.
In this paper we report on recent results for the quark propagator on a compact manifold. The corresponding Dyson-Schwinger equations on a torus are solved on volumes similar to the ones used in lattice calculations. The quark-gluon interaction is fixed such that the lattice results are reproduced. We discuss both the effects in the infinite volume/continuum limit as well as effects when the volume is small.  相似文献   
112.
王德华 《中国物理快报》2007,24(7):1886-1889
The photodetachment cross section of H^- in parallel electric and magnetic fields near an elastic surface is derived and calculated by using the closed orbit theory. It is found that the elastic surface can produce some interesting effects. Besides the closed orbits previously found by Peters et al. for the H^- in parallel electric and magnetic fields, some additional closed orbits are produced due to the effect of the elastic surface. The results show that the cross section oscillation is much more complicated in comparison with the cross section of H^- in parallel external fields without surface. Each peak in the Fourier transformed cross section corresponds to the period of one detached electron closed orbit. This study provides a new understanding of the photodetachment of negative ions in the presence of external fields and surface.  相似文献   
113.
Silicon-incorporated diamond-like carbon (Si-DLC) films were deposited via dc plasma-enhanced chemical vapor deposition (PECVD), on glass and alumina substrates at a substrate temperature 300 °C. The precursor gas used was acetylene and for Si incorporation, tetraethyl orthosilicate dissolved in methanol was used. Si atomic percentage in the films was varied from 0% to 19.3% as measured from energy-dispersive X-ray analysis (EDX). The binding energies of C 1s, Si 2s and Si 2p were determined from X-ray photoelectron spectroscopic studies. We have observed low-macroscopic field electron emission from Si-DLC thin films deposited on glass substrates. The emission properties have been studied for a fixed anode-sample separation of 80 μm for different Si atomic percentages in the films. The turn-on field was also found to vary from 16.19 to 3.61 V/μm for a fixed anode-sample separation of 80 μm with a variation of silicon atomic percentage in the films 0% to 19.3%. The turn-on field and approximate work function are calculated and we have tried to explain the emission mechanism there from. It was found that the turn-on field and effective emission barrier were reduced by Si incorporation than undoped DLC.  相似文献   
114.
J.G. Benito  I. Ippolito 《Physica A》2008,387(22):5371-5380
This paper presents an experimental and numerical study that deals with the problem of mixing grains falling down through a bi-dimensional Galton board (BGB). The special issue addressed here is the influence of the presence of lateral walls in the BGB. Disks of equal diameters but different species are launched from the top of the device. During the fall, disks collide with obstacles (arranged to form a triangular lattice) and with the lateral walls. The exit distribution of particles at the bottom of the board is determined and the incidence of the presence of walls in the mixing quality is studied as a function of W the relative separation between lateral walls. Two types of indexes are evaluated to characterize the efficiency in the obtained mixture. The presence of walls has proven to be crucial to enhance the quality of the mixture of particles.  相似文献   
115.
We study experimentally the creeping penetration of guest (percolating) grains through densely packed granular media in two dimensions. The evolution of the system of the guest grains during the penetration is studied by image analysis. To quantify the changes in the internal structure of the packing, we use Voronoï tessellation and a certain shape factor which is a clear indicator of the presence of different underlying substructures (domains). We first consider the impact of the effective gravitational acceleration on upward penetration of grains. It is found that the higher effective gravity increases the resistance to upward penetration and enhances structural organization in the system of the percolating grains. We also focus our attention on the dependence of the structural rearrangements of percolating grains on some parameters like polydispersity and the initial packing fraction of the host granular system. It is found that the anisotropy of penetration is larger in the monodisperse case than in the bidisperse one, for the same value of the packing fraction of the host medium. Compaction of initial host granular packing also increases anisotropy of penetration of guest grains. When a binary mixture of large and small guest grains is penetrated into the host granular medium, we observe size segregation patterns.  相似文献   
116.
H.D. Zhang 《Journal of Non》2008,354(34):4089-4093
In this thesis, we will elaborate on the synthesis and characterization of monolithic Gd2O3 aerogel. We conducted the experiment in the following procedure. Use gadolinium nitrate or gadolinium chloride, a kind of inorganic gadolinium salt as raw material, and polymerize it in ethanol with propylene oxide as gelation initiator in the way of sol-gel. After this step, we can obtain the wet gel. Then, dry the wet gel by supercritical CO2, at last we will get aerogel. The product has strong transparency and also shows some thermal stability. XRD characterization shows that it is amorphous. Nitrogen adsorption/desorption analysis tells clearly its surface area (223 m2/g), average pore diameters (42 nm) and large pore volume (1.83 ml/g). It is also characterized by transmission electron microscopy and high-resolution transmission electron microscopy.  相似文献   
117.
The defect states in bulk of i-layer and at p+/i interface have been studied by using dark reverse current-voltage (J-V) measurements. The dark reverse current as a function of voltage has been analyzed on the basis of thermal generation of the carriers from mid-gap states in i-layer. Based on its behavior the thermal generation mechanism has been divided into two types. Thermal generation at lower bias (<5 V) shows V1/2 behavior, whereas at higher bias follows an exponential dependence of voltage (>5 V). This was explained using a thermal generation zone at lower bias, which is a source of reverse currents, and its evolution towards p+/i interface with increasing voltage. The analytical result has shown that at lower reverse bias (V < 5 V) the defect states in the bulk of i-layer and at higher bias (∼ 25 V) the defect states at p+/i interface are contributing to the reverse currents. Reverse bias annealing (RBA) treatment which has been performed on these cells shows that a reduction of defect states more in the i-region near to the p+-layer and at p+/i interface as compared to the deep regions in bulk of i-layer. The calculated defect state density (DOS) is varying from its intrinsic value of 2.4 × 1017 cm−3 in the bulk of the i-layer up to 2.1 × 1019 cm−3 near and at p+/i interface. These values decrease to 7.1 × 1016 cm−3 and 2.7 × 1017 cm−3, respectively, in the samples annealed under reverse bias at 2 V. The bias dependent leakage current behavior has been modeled and implemented in simulation program with integrated circuit emphasis (SPICE) using simple circuit elements based on voltage controlled current sources (VCCS). Simulated and measured reverse leakage current characteristics are in reasonable agreement.  相似文献   
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