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991.
Richard Nader Michel Kazan Elie Moussaed Thomas Stauden Merten Niebelschütz Pierre Masri Jörg Pezoldt 《Surface and interface analysis : SIA》2008,40(9):1310-1317
The influence of Ge deposition prior to carbon interaction with 3° off‐axis Si(111) substrates on the structural and morphological properties of the formed silicon carbide (SiC) layer is studied. In situ reflection high‐energy electron diffraction (RHEED) and X‐ray diffraction (XRD) revealed the formation of the cubic silicon carbide (3C‐SiC) modification. In situ spectroscopic ellipsometry measurements revealed a decreasing 3C‐SiC thickness with increasing Ge predeposition. Atomic force microscopy (AFM) studies revealed that the surface overlayer morphology is mainly formed by periodic step arrangements whose relevant geometric parameters, i.e. lateral separation, height and terrace width, depend on the Ge content. Besides the changes of the step morphology, the surface roughness and the grain size and the strain of the formed 3C‐SiC decreases with increasing germanium precoverage. Copyright © 2008 John Wiley & Sons, Ltd. 相似文献
992.
993.
本文介绍了通过测量束流在输运管壁上形成的感应电流,来确定直线感应加速器束流大小、位置的一种方法。实验证明,这种测量方法不会影响电子束在管道中的传输,且测量精度高,装置简单,并可装在真空系统的外面,便于维修。 相似文献
994.
We obtain several extensions of Talagrand’s lower bound for the small deviation probability using metric entropy. For Gaussian processes, our investigations are focused on processes with sub-polynomial and, respectively, exponential behaviour of covering numbers. The corresponding results are also proved for non-Gaussian symmetric stable processes, both for the cases of critically small and critically large entropy. The results extensively use the classical chaining technique; at the same time they are meant to explore the limits of this method. 相似文献
995.
996.
Wang Chang-biao Tu Jian-nan Jian Hua-bei Sun Yan 《International Journal of Infrared and Millimeter Waves》1986,7(7):1005-1035
The kinetic theory based on the expansion of local field in the guiding center coordinate system, presented by paper[1]–[3], has successfully developed into a theoretical system. The mathematical background and physical explanation of setting up the guiding center coordinate system is expounded in the paper. By using the methods of the guiding center and waveguide coordinate systems respectively, the same dispersion equations for interaction of an axially symmetrical single momentum electron beam with TEmn field in the circular waveguide are rigorously derived. A number of mistakes in paper[4] are indicated as well. 相似文献
997.
Tae-Hyoung Moon Moon-Ho Ham Myoung-Seok Kim Ilgu Yun Jae-Min Myoung 《Applied Surface Science》2005,240(1-4):105-111
HfO2 dielectric layers were grown directly on the p-type Si (1 0 0) by metalorganic molecular beam epitaxy (MOMBE). Hafnium tetra-butoxide was used as a Hf precursor and pure oxygen was introduced to form an oxide layer. The properties of the layers with different thicknesses were evaluated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), high-resolution transmission electron microscopy (HRTEM), and capacitance–voltage (C–V) and current–voltage (I–V) analyses. XRD and HRTEM results showed that the HfO2 films thinner than 12 nm were amorphous while the films thicker than 12 nm began to crystallize in the tetragonal and the monoclinic phases. The XPS spectra of O 1s show that the O---Si binding energies shifted to the lower binding energy with increasing the HfO2 layer thickness. Moreover, the snap back phenomenon is observed in accumulation capacitance. These changes are believed to be linked with the decomposition of SiO and the crystallization of HfO2 layer during the film growth. 相似文献
998.
999.
This is the fourth article of our series. Here, we study weighted norm inequalities for the Riesz transform of the Laplace–Beltrami
operator on Riemannian manifolds and of subelliptic sum of squares on Lie groups, under the doubling volume property and Gaussian
upper bounds.
相似文献
1000.