NFZ-10工业辐照电子直线加速器

研制的电子直线加速器ＮＦＺ－１０的辐照加工能力相当于３０ＰＢｑ的６０Ｃｏ源，电子束能量为４～１２ＭｅＶ，平均束功率为３ｋＷ，扫描宽度为１ｍ，能量不稳定度≤±０．５％，束流不稳定度≤±０．６％，扫描不均匀度≤±２．５％。ＮＦＺ－１０加速器已被用于辐照各种电力半导体器件，一年多来运行稳定可靠并获得较好的经济效益。     

微型硅谐振式力传感器的振动分析

介绍了谐振式力传感器的工作原理，并从理论上和实验上对中科院合肥智能所研制的第一代微型硅谐振梁（３×０．４×０．０４５ｍｍ＾３）式测力传感器进行了全面的振动分析，所得结构为其进一步优化设计提供了科学根据，文中使用的实验分析方法，为其它微小物体的动态和识别提供了一条有效途径。     

Solid-State polymerization of the binary mixture of methacrylate and liquid-crystalline compound by electron beam

Solid-state polymerization of a binary mixture of nonliquid-crystalline monomer and liquidcrystalline compound was carried out using electron beam. The monomers were benzoic acid containing 4-[ω-(meth)acryloyloxyalkyloxy] benzoic acids, in which the alkylene spacer was ethylene, hexamethylene, or undecamethylene. The conversion yield of monomer to polymer to a large extent increased with increasing content of a liquid-crystalline compound with a terminal carboxylic group, such as 4-n-alkyloxybenzoic acid, while the addition of a liquid-crystalline compound without terminal carboxylic group did not affect polymerization of the monomer. Phase diagrams of the mixture of monomer and liquid-crystalline compound were examined using cross-polarizing microscopy and differential scanning calorimetry (DSC). All mixtures of monomer and 4-n-alkyloxybenzoic acid or liquid-crystalline compound without terminal carboxylic group showed liquid-crystallinity in a broad composition range. It was concluded that liquid-crystalline compounds with terminal carboxylic acid may form hydrogen bondings with methacrylate or acrylate monomer having terminal carboxylic acid which enhance polymerizability of the mixture. The stereoregularity of polymers determined by NMR depended on increasing irradiation dose and temperature rather than the content of the added liquid-crystalline 4-n-decanoxybenzoic acid.     

Al_(70)Cu_(30)合金液态RDF高斯分解与局域结构计算

运用密度泛函B3LYP方法对AlmCun(m,n≤4)团簇结构进行量子化学计算,得到团簇的稳定构型。对不同温度下X-射线衍射实验所得的径向分布函数(RDF)在0.2～0.4nm范围内做高斯分解,结合计算结果对高斯峰的意义做了解释,认为计算所得部分团簇构型可以代表Al70Cu30合金熔体的内部局域结构。     

电沉积镍钨注钼电极的析氢反应

在所有电极过程中研究最多的是析氢反应,其重要性一直为化学界所关注。提高电极活性的各种方法中,普遍采用电沉积法,它价廉简便、效果明显。但涂层不够牢固,在使用过程中易脱落,使用寿命短。为了克服上述缺点,作者将电沉积和离子注入技术联合使用,即在Ni、W镀层上注入Mo离子,利用Mo离子的能量将Ni、W打入表面内层,进行离子束混合。这既     

The study of electron beam flue gas treatment for coal-fired thermal plant in Japan

The fundamental research work with simulated coal-fired flue gas was performed in JAERI to get basic data for electron beam treatment of flue gas from thermal power plants in Japan. The standard condition of the experiments was set to be the same as that of next large scale pilot test in Nagoya. The concentrations of NO_x and SO_x were 225 ppm and 800 ppm, respectively. The temperature of the system was 65°C. The effect of multiple irradiation was observed for NO_x removal. The target SO_x and NO_x removals (94% and 80%, respectively) with low NH₃ leakage (less than 10 ppm) were achieved at 9 kGy irradiation with 0.9 NH₃ stoichiometry during 7 hours continuous operation. The facility for the pilot plant (12,000 Nm³/hr) has just built at the site of Shin-Nagoya power plant of Chubu Electric Power Company and will be started in full operation in November 1992.     

Atomic structure of InAs quantum dots on GaAs

In recent years, the self-assembled growth of semiconductor nanostructures, that show quantum size effects, has been of considerable interest. Laser devices operating with self-assembled InAs quantum dots (QDs) embedded in GaAs have been demonstrated. Here, we report on the InAs/GaAs system and raise the question of how the shape of the QDs changes with the orientation of the GaAs substrate. The growth of the InAs QDs is understood in terms of the Stranski–Krastanow growth mode. For modeling the growth process, the shape and atomic structure of the QDs have to be known. This is a difficult task for such embedded entities.

In our approach, InAs is grown by molecular beam epitaxy on GaAs until self-assembled QDs are formed. At this point the growth is interrupted and atomically resolved scanning tunneling microscopy (STM) images are acquired. We used preparation parameters known from the numerous publications on InAs/GaAs. In order to learn more about the self-assemblage process we studied QD formation on different GaAs(0 0 1), (1 1 3)A, and ( )B substrates. From the atomically resolved STM images we could determine the shape of the QDs. The quantum “dots” are generally rather flat entities better characterized as “lenses”. In order to achieve this flatness, the QDs are terminated by high-index bounding facets on low-index substrates and vice versa. Our results will be summarized in comparison with the existing literature.     

光解碎片平动谱中二级过程的运动学及化学动力学

本文发展了一套分析处理分子束光解反应实验中二级分解产物飞行谱的方法, 它改进了Kroger和Riley的最初讨论。本文表明许多重要的信息都可以从高度平均的实验数据中得出。这包括二级分解产物的平均平动能分布、空间各向异性参数、平行竞争通道间的反应比。模拟的结果可以表现二级分解反应的一些主要特征。     

Mechanism of azole antifungal activity as determined by liquid chromatographic/mass spectrometric monitoring of ergosterol biosynthesis

A liquid chromatography/mass spectrometry (LC/MS) method for separation and characterization of ergosterol biosynthetic precursors was developed to study the effect of Posaconazole on sterol biosynthesis in fungi. Ergosterol biosynthetic precursors were characterized from their electron ionization mass spectra acquired by a normal-phase chromatography, particle beam LC/MS method. Fragment ions resulting from cleavage across the D-ring and an abundant M - 15 fragment ion were diagnostic for methyl substitution at C-4 and C-14. Comparison of the sterol profile in control and treated Candida albicans incubations showed depletion of ergosterol and accumulation of C-4 and C-14 methyl-substituted sterols following treatment with Posaconazole. These C-4 and C-14 methyl sterols are known to be incapable of sustaining cell growth. The results demonstrate that Posaconazole exerts its antifungal activity by inhibition of ergosterol biosynthesis. Furthermore, Posaconazole appears to disrupt ergosterol biosynthesis by inhibition of lanosterol 14alpha-demethylase.     

Chemically assisted ion beam etching of silicon and silicon dioxide using SF6

A chemical flux of sulfur hexafluoride (SF₆) in conjunction with low-energy Ar-ion bombardment has been used for chemically assisted ion beam etching (CAIBE) of silicon and silicon dioxide. The study has shown a large degree of independent control over the selectivity and anisotropy in dry etching. The total etch rate could be controlled by varying either the Ar-ion milling parameters or the chemical flux of SF₆. Etch rate enhancement of 7–8 for silicon and 3–4 for silicon dioxide have been obtained over pure physical etching.