Orientation relationship in Eurofer martensitic steels

Both TEM and SEM/EBSD orientation measurements are carried out on a Eurofer97 martensitic steel. The influence of the prior austenitic grain size is studied using dedicated heat treatments. The intra laths misorientation is estimated by TEM. SEM/EBSD orientation mapping enable to study the actual orientation relationship (OR) between the parent austenitic phase and the martensitic phase. Neither the Nishiyama–Wasserman nor the Kurdjumov–Sachs OR is able to account for both the misorientation angle distributions, the pole figure and the misorientation axes measured. The mixed OR recently proposed by Gourgues et al. (Electron backscattering diffraction study of acicular ferrite, bainite, and martensite steel microstructures, Mater. Sci. Tech. 16 (2000), pp. 26–40.) and Sonderegger et al. (Martensite laths in creep resistant martensitic 9–12%Cr steels – Calculation and measurement of misorientations, Mater. Characterization (2006), in Press.) seems to be able to account for most of these results. Based on this OR, a new angular criterion is proposed to detect blocks of laths.     

Phase behavior of four homologous compounds of 4-n-alkyl-4′-isothiocyanatobiphenyl (nBT) under pressure

The phase behavior of four homologous compounds of 4-n-nonyl-, 4-n-decyl-, 4-n-undecyl-, and 4-n-dodecyl-4′-isothiocyanatobiphenyl (9BT, 10BT, 11BT, and 12BT) was re-investigated to characterize their high-pressure mesophases under pressures up to 150 MPa using a polarizing optical microscope equipped with a high-pressure optical cell and a wide-angle X-ray diffractometer equipped with a high-pressure sample vessel. The pressure-induced mesophases of 9BT and 10BT appearing under pressures above about 60 and 100 MPa, respectively, were identified as nematic (N) and SmA phases, which indicate the reversible Cr–CrE–N–I and Cr–CrE–SmA–I phase transitions under elevated pressure. 11BT and 12BT exhibited the reversible transition of Cr–CrE–SmA–I in the low-pressure regions below about 5 and 23 MPa, respectively. Both the stable CrE phases changed into the monotropic (and metastable) one under higher pressures, in which the Cr–SmA–I and I–SmA–CrE–Cr phase transitions on heating and cooling processes, respectively, were recognized.     

Phase relationships in the Gd–Co–Al ternary system at 500°C

The phase relationships in the Gd–Co–Al ternary system at 500°C have been investigated mainly by X-ray diffraction, scanning electron microscopy, and energy dispersion spectroscopy. The existence of two ternary compounds GdCo_0.74Al_1.26 and Gd₂Co₂Al has been confirmed. Twenty-two single-phase regions (including solid solution regions of the binary compounds), 43 two-phase regions, and 22 three-phase regions were found to exist at this isothermal section. In this work, no new binary or ternary phase was found.     

Effect of TiO2 addition on the crystallization of quenched glasses in the SiO2–Al2O3–ZrO2 system

The glass formation in the SiO₂-rich region of the ternary oxide system Al₂O₃–ZrO₂–SiO₂ with MgO, CaO, and TiO₂ as melting aids was analyzed. The crystallization of glasses with different content of TiO₂ and phase evolution with the temperature was studied by X-ray diffraction, infrared, laser Raman spectroscopy and transmission electron microscopy. The use of TiO₂ favored formation and crystallization of the glasses due to the decrease of the viscosity of melts and acting as a nucleating agent. The crystalline phase of t-ZrO₂ was developed at temperatures as low as 880°C whereas in as prepared specimens without TiO₂ its presence was not detected. For the specimens with TiO₂, t-ZrO₂ and mullite were the principal phases at 1000°C. TiO₂ addition did not change the crystallization sequence but decreased the formation temperature of the crystalline phases. Most of Ti⁴⁺ ions entered into t-ZrO₂ and only a small portion in mullite, but the surplus was detected in ZrTiO₄.     

无限大平面磁通量的规律性及其应用

对于球解高对称性静磁场，如果仅应用安培环路定理和高斯定理，在解答中会存在一些不能唯一确定的常量，为了研究确定这些常量的规律，本讨论了穿过一个无限大平面的磁通量并用得到了一个有意义的结论。     

Minkowski空间中保高斯映射的共形形变

设Ｍｎ为Ｒｉｅｍａｎｎ流形，给定类空浸入：Ｍｎ→Ｒｎ，ｐ，如果存在另一个类空浸入：Ｍｎ→Ｒｎ，ｐ，使与在共形对应之下且对应点的地空间平行，则称类空子流形是可保高斯映射共形形变的．本文给出可保高斯映射共形形变的充要条件．对ｎ＝２，ｐ＝１的情形，如果上述形变是同向的，我们分类了曲面；如果是反向的，我们用主曲率满足的方程来描述．     

Spontaneous excitation of a circularly accelerated atom coupled with vacuum Dirac field fluctuations

We study the spontaneous excitation of a circularly accelerated atom coupled with vacuum Dirac field fluctuations by separately calculating the contribution to the excitation rate of vacuum fluctuations and a cross term which involves both vacuum fluctuations and radiation reaction, and demonstrate that although the spontaneous excitation for the atom in its ground state would occur in vacuum, such atoms in circular motion do not perceive a pure thermal radiation as their counterparts in linear acceleration do since the transition rates of the atom do not contain the Planckian factor characterizing a thermal bath. We also find that the contribution of the cross term that plays the same role as that of radiation reaction in the scalar and electromagnetic fields cases differs for atoms in circular motion from those in linear acceleration. This suggests that the conclusion drawn for atoms coupled with the scalar and electromagnetic fields that the contribution of radiation reaction to the mean rate of change of atomic energy does not vary as the trajectory of the atom changes from linear acceleration to circular motion is not a general trait that applies to the Dirac field where the role of radiation reaction is played by the cross term.     

Spectral analysis on a phonon spectral function of a solid-state plasma in a doped semiconductor

We report an analysis on a phonon spectral function of a solid-state plasma formed in a doped semiconductor. Real and imaginary parts of phonon propagators are evaluated including carrier screening effects within a random phase approximation, and finite-temperature spectral behavior of the phonon spectral function is examined in terms of plasmon-phonon coupled modes and quasiparticle excitation mode of the plasma. The results are applied to the case of conduction electrons in a wurtzite GaN considering carrier-phonon coupling channel via polar optical phonons. We show that the dispersion relations of the plasmon-LO phonon coupled (‘upper’ and ‘lower’) modes and the character of the additional modes via single quasiparticle excitations are heavily associated with the nonlocal and dynamic behavior of the energy shift and collisional broadening of the dressed phonon propagator of the plasma.     

Influence of substrate activation process on structural and optical properties of ZnS thin films

ZnS thin films were deposited on glass substrates by a chemical bath deposition method using a substrate activation process in which aluminum ions become “contaminants” that act as a nucleation center for active components within the deposition solution. The structure and morphology results demonstrate that the films have a ZnS sphalerite crystal structure with a particle size less than 15 nm, and the films consist of small homogeneous grains. The effects of the substrate activation process on the band gap energies and donor-acceptor pair luminescence process were also investigated. A green emission centered at 502 nm was produced due to donor-acceptor transitions from the aluminum acceptor to the ionized and substitution aluminum centers (Al³⁺).     

Investigation of the electrical and optical properties of InAs/InGaAs dot in a well solar cell

The electroreflectance (ER) and current–voltage (J–V) of InAs/InGaAs dots in a well (DWELL) solar cell (SC) were measured to examine the optical and electrical properties. To investigate the carrier capturing and escaping effects in the quantum dot (QD) states the above and below optical biases of the GaAs band gap were used. In the reverse bias region of the J–V curve, the tunneling effect in the QD states was observed at low temperature. The ideality factors (n) were calculated from the J–V curves taken from various optical bias intensities (I_ex). The changes in the ideality factor (n) and short circuit current (J_SC) were attributed mainly to carrier capture at low temperature, whereas the carrier escaping effect was dominant at room temperature. ER measurements revealed a decrease in the junction electric field (F_J) due to the photovoltaic effect, which was independent of the optical bias source at the same temperature. At low temperature, the reduction of photovoltaic effect could be explained by the enhancement carrier capturing effect due to the strong carrier confinement in QDs.