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ABSTRACTQM(UB3LYP)/MM(AMBER) calculations were performed for the locations of the transition structure (TS) of the oxygen–oxygen (O–O) bond formation in the S4 state of the oxygen-evolving complex (OEC) of photosystem II (PSII). The natural orbital (NO) analysis of the broken-symmetry (BS) solutions was also performed to elucidate the nature of the chemical bonds at TS on the basis of several chemical indices defined by the occupation numbers of NO. The computational results revealed a concerted bond switching (CBS) mechanism for the oxygen–oxygen bond formation coupled with the one-electron transfer (OET) for water oxidation in OEC of PSII. The orbital interaction between the σ-HOMO of the Mn(IV)4–O(5) bond and the π*-LUMO of the Mn(V)1=O(6) bond plays an important role for the concerted O–O bond formation for water oxidation in the CaMn4O6 cluster of OEC of PSII. One electron transfer (OET) from the π-HOMO of the Mn(V)1=O(6) bond to the σ*-LUMO of the Mn(IV)4–O(5) bond occurs for the formation of electron transfer diradical, where the generated anion radical [Mn(IV)4–O(5)]-? part is relaxed to the ?Mn(III)4?…?O(5)- structure and the cation radical [O(6)=Mn(V)1]+ ? part is relaxed to the +O(6)–Mn(IV)1? structure because of the charge-spin separation for the electron-and hole-doped Mn–oxo bonds. Therefore, the local spins are responsible for the one-electron reductions of Mn(IV)4->Mn(III)4 and Mn(V)1->Mn(IV)1. On the other hand, the O(5)- and O(6)+ sites generated undergo the O–O bond formation in the CaMn4O6 cluster. The Ca(II) ion in the cubane- skeleton of the CaMn4O6 cluster assists the above orbital interactions by the lowering of the orbital energy levels of π*-LUMO of Mn(V)1=O(6) and σ*-LUMO of Mn(IV)4–O(5), indicating an important role of its Lewis acidity. Present CBS mechanism for the O–O bond formation coupled with one electron reductions of the high-valent Mn ions is different from the conventional radical coupling (RC) and acid-base (AB) mechanisms for water oxidation in artificial and native photosynthesis systems. The proton-coupled electron transfer (PC-OET) mechanism for the O–O bond formation is also touched in relation to the CBS-OET mechanism. 相似文献
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Jaeyoung Chung 《Journal of Mathematical Analysis and Applications》2004,300(2):376-350
We reformulate and prove the Hyers–Ulam–Rassias stability of Cauchy equation in the space of Schwartz tempered distributions and Fourier hyperfunctions. 相似文献
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WEIERSTRASS REPRESENTATION FORSURFACES WITH PRESCRIBED NORMALGAUSS MAP AND GAUSS CURVATURE IN H~3 下载免费PDF全文
SHI Shuguo 《数学年刊B辑(英文版)》2004,25(4):567-586
The author obtains a Weierstrass representation for surfaces with prescribed normal Gauss map and Gauss curvature in H3. A differential equation about the hyperbolic Gauss map is also obtained, which characterizes the relation among the hyperbolic Gauss map, the normal Gauss map and Gauss curvature. The author discusses the harmonicity of the normal Gauss map and the hyperbolic Gauss map from surface with constant Gauss curvature in H3 to S2 with certain altered conformal metric. Finally, the author considers the surface whose normal Gauss map is conformal and derives a completely nonlinear differential equation of second order which graph must satisfy. 相似文献
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Bernard Bialecki 《Numerical Algorithms》1994,8(2):167-184
Cyclic reduction and Fourier analysis-cyclic reduction (FACR) methods are presented for the solution of the linear systems which arise when orthogonal spline collocation with piecewise Hermite bicubics is applied to boundary value problems for certain separable partial differential equations on a rectangle. On anN×N uniform partition, the cyclic reduction and Fourier analysis-cyclic reduction methods requireO(N
2log2
N) andO(N
2log2log2
N) arithmetic operations, respectively. 相似文献
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本文给出直接求线性规划问题基可行解的一种简易方法,该方法既避免了引入人工变量,减少存储,一般又能较快地得到一个较好的基可行解. 相似文献
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A. Torrisi P. Horák J. Vacík A. Cannavò G. Ceccio J. Vaniš 《Phosphorus, sulfur, and silicon and the related elements》2020,195(11):932-935
AbstractOn the perspective to develop CuO–TiO2 MOS, multilayered Cu and Ti thin layers were alternatively deposited on silicon wafers using 25?keV Ar?+?ion beam sputtering and, subsequently, oxidized by thermal annealing in air at 400?°C for 24?h. The deposited films have variable ratios of the Cu and Ti % at. One of the main goal is to obtain such multilayers avoiding the presence of Cu–Ti–O compounds. The samples were characterized in terms of composition (by RBS and SIMS analyses) and morphology (by AFM and SEM investigations). In particular, SIMS maps allows to observe the spatial distribution and thickness of each phase of the Cu/Ti multilayers, and further to observe Cu diffusion and mixing with Ti, as well as phase separation of CuO and TiO2 in the samples. The reasons of this effect represent an open issue that has to investigated, in order to improve the MOS fabrication. 相似文献