Crystal growth,dielectric and FIR reflectivity studies on PZN(0.91)‐PT(0.09) single crystals

Crystal growth of PZN‐PT single crystals using slow cooling flux technique with PbO flux is reported in this communication. Optimum growth conditions to maximize the amount of perovskite are also suggested. The grown crystals are characterized by dielectric and FIR spectroscopy. Temperature dependence of ε′ very close to the transition temperature shows a first order phase transition. Diffused phase transition and strong frequency dependence of ε′ around transition temperature are also observed. The real part of ε′ was found to obey the relation ε′ – ε_∞ = χ′(T‐T_o)². Dispersion in the ferroelectric phase is suggested to originate from ordering of domains. Competition in the B‐site occupancy by Zn, Nb and Ti ions is suggested to be the origin for the additional modes in the FIR reflectivity at room temperature. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Potassium Ion-Selective Field-Effect Transistor (ISFET) Sensors: Studies on Gate Dimensions and Ion-Implantation Levels

Abstract

Silicon nitride membrane ISFET sensor chips have been produced with varying gate dimensions. A series of width/length (W/L) aspect ratios have been examined, combined with three levels of boron ion-implant. The level of ion-implantation affects the threshold voltage; this is important as a low threshold voltage allows the use of low noise operating conditions. Gate dimensions are also important factors for they determine the level of drain current for a given gate and drain voltages. A novel design feature, aimed at achieving wide gates, is the use of folded gates as well as having a straight structure. The evaluation of devices with gates covered with poly(vinyl chloride) (PVC)-valinomycin-dioctyl adipate was based on their response to potassium chloride standards when it was shown that there may be a maximum width of gate above which there is no improvement of response. Also, the effect of folding the gate structure is discussed and shown to be tenable, thus permitting greater miniaturisation.     

Enhanced mobility and environmental stability in all organic field‐effect transistors: The role of high dipole moment solvent

Low‐operating voltage, high mobility, and stable organic field‐effect transistors (OFETs) using polymeric dielectrics such as pristine poly(4‐vinyl phenol) (PVP) and poly(methyl methacrylate) (PMMA), dissolved in solvents of high dipole moment, have been achieved. High dipole moment solvents such as propylene carbonate and dimethyl sulfoxide used for dissolving the polymer dielectric enhance the charge carrier mobilities by three orders of magnitude in pentacene OFETs compared with low dipole moment solvents. Fast switching circuits with patterned gate PVP‐based pentacene OFETs demonstrated a switching frequency of 75 kHz at input voltages of |5 V|. The frequency response of the OFETs is attributed to a high degree of dipolar‐order in dielectric films obtained from high‐polarity solvents and the resulting energetically ordered landscape for transport. Remarkably, these pentacene‐based OFETs exhibited high stability under bias stress and in air with negligible shifts in the threshold voltage. © 2013 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2013 , 51, 1533–1542     

层叠Blumlein线多开关导通时间分散性

高介电常数陶瓷储能脉冲形成线需要用到多开关触发的层叠Blumlein线结构。从形成线波过程理论出发,分析了多开关导通时间分散性对层叠Blumlein线及其输出波形的影响。主要包括两方面影响:其一是造成输出方波脉冲的前沿和后沿均出现阶梯形畸变;其二是使得各延迟导通的平行平板Blumlein线承受过电压,容易引起陶瓷储能介质的电击穿。在不单独考虑开关电感的理想情况下,利用PSpice电路程序模拟了开关导通时间分散性对四级层叠Blumlein线的影响,模拟结果与波过程理论分析一致。为减弱这些影响,提出了可行的解决方案。     

Powderless processing of ceramics: Thin-layer electroceramics

A review is made of progress on the sol-gel processing of dense insulating electroceramics by polymeric condensation routes. Up until the past ten years, powders and porous coatings were principally made for optical and conductive applications. Much effort was expended on silica (SiO₂) and silicate-based systems. Recently, these approaches have been extended to non-silicate systems [1]. In this paper information is presented for the powderless processing of selected electroceramics in thin-layer form. Materials include PbTiO₃, BaTiO₃, Ba_1–x Pb _x TiO₃, PbZrO₃, Pb(Zr_1–y Ti _y )O₃ and (Pb_1–x La _x )(Zr_1–y Ti _y )O₃ which find applications in ceramic capacitors, piezoelectric transducers and electrooptic modulators. The approach is to avoid powders, and the attendent problems of powder handling, flow, packing, etc., and make use of polymerization condensation reactions to form extended networks with chemical linkage. Data are reported for the synthesis and low temperature processing routes for amorphous and polycrystalline ceramics.     

Theoretical studies of the band structure and optoelectronic properties of ZnOxS1−x

In the present article, we have revisited the electronic band gap nature of ZnO_xS_1?x (0 ≤ x ≤ 1) with the recently developed modified Becke and Johnson exchange potential and the calculated band gaps are found consistent with the experimental results. We expect that the band gap bowing parameter obtained in the present work will be close to the experimental one. As the optical properties of ZnO_xS_1?x (0 ≤ x ≤ 1) are very important, therefore different optical parameters like dielectric functions, refractive index and reflectivity are also calculated. The results are illustrated in terms of band structures, band gap energy as a function of oxygen composition, total and partial density of states. © 2012 Wiley Periodicals, Inc.     

无线激光通信协议的设计(英文)

研究了无线激光通信(FSO)与传统激光通信的区别,编制了一套FSO物理层收发协议。采用现场可编程门阵列(FPGA)完成收发机与外部电路的数据通信,利用先入先出(FIFO)存储器完成收发协议与外部系统的接口。设计的物理层收发协议主要完成发送数据的编码、串行化以及接收数据的解串行化和解码。仿真实验结果表明:设计的收发协议可实现在40 Mbps通信速率下的稳定工作,证明了该收发协议设计的可行性。     

New Design for Quantum Dots Cellular Automata to obtain Fault Tolerant Logic Gates

In this paper, we analyze fault tolerance properties of the Majority Gate, as the main logic gate for implementation with Quantum dots Cellular Automata (QCA), in terms of fabrication defect. Our results demonstrate the poor fault tolerance properties of the conventional design of Majority Gate and thus the difficulty in its practical application. We propose a new approach to the design of QCA-based Majority Gate by considering two-dimensional arrays of QCA cells rather than a single cell for the design of such a gate. We analyze fault tolerance properties of such Block Majority Gates in terms of inputs misalignment and irregularity and defect (missing cells) in assembly of the array. We present simulation results based on semiconductor implementation of QCA with an intermediate dimensional dot of about 5 nm in size as opposed to magnetic dots of greater than 100 nm or molecular dots of 2–5Å. Our results clearly demonstrate the superior fault tolerance properties of the Block Majority Gate and its greater potential for a practical realization. We also show the possibility of designing fault tolerant QCA circuits by using Block Majority Gates.     

Band-gap structure of the spectrum of periodic Maxwell operators

We investigate the band-gap structure of some second-order differential operators associated with the propagation of waves in periodic two-component media. Particularly, the operator associated with the Maxwell equations with position-dependent dielectric constant (x),xR ³, is considered. The medium is assumed to consist of two components: the background, where (x) = _b , and the embedded component composed of periodically positioned disjoint cubes, where (x) = _a . We show that the spectrum of the relevant operator has gaps provided some reasonable conditions are imposed on the parameters of the medium. Particularly, we show that one can open up at least one gap in the spectrum at any preassigned point provided that the size of cubesL, the distancel=L betwen them, and the contrast = _b / _a are chosen in such a way thatL ^–2, and quantities ^-1-3/2 and ² are small enough. If these conditions are satisfied, the spectrum is located in a vicinity of widthw(^3/2)^-1 of the set {² L ^-2 k ²:kZ³}. This means, in particular, that any finite number of gaps between the elements of this discrete set can be opened simultaneously, and the corresponding bands of the spectrum can be made arbitrarily narrow. The method developed shows that if the embedded component consists of periodically positioned balls or other domains which cannot pack the space without overlapping, one should expect pseudogaps rather than real gaps in the spectrum.     

A novel lateral diffused metal oxide semiconductor (LDMOS) by attracting the electric field Lines

In this paper, a novel silicon on insulator (SOI) lateral diffused metal oxide semiconductor (LDMOS) transistor with high voltage and high frequency performance is presented. In this work we try to reduce the electric field crowding in the drift region. The proposed structure consists of a metal in the buried oxide and also connected to the source. The inserted metal attracts the electric field lines in the buried oxide. It causes 67% improvement in the breakdown voltage in comparison with a conventional SOI-LDMOS (C-LDMOS). Our simulations with two dimensional ATLAS simulator show that the gate-drain capacitance improves in the proposed structure. The unilateral power gain also enhances. So, the proposed structure is suitable for high voltage and high frequency applications.