Effect of post-deposition annealing on structural and electrical properties of high-k HoTiO3 gate dielectrics

In this article, the authors developed a high-k HoTiO₃ gate dielectric deposited on Si (1 0 0) through reactive cosputtering. They found that the HoTiO₃ dielectrics annealed at 800 °C exhibited excellent electrical properties such as high capacitance value, small density of interface state, almost no hysteresis voltage, and low leakage current. This phenomenon is attributed to the decrease in intrinsic defect (related to oxygen vacancy) due to a rather well-crystallized HoTiO₃ structure and composition observed by X-ray diffraction, secondary ion mass spectrometry, and X-ray photoelectron spectroscopy, respectively.     

UV assisted low temperature nitridation and post deposition oxidation technique for hafnium oxide gate dielectric

An evaluation of a low temperature method (∼400 °C) for synthesis of nitrogen incorporated hafnia gate dielectric has been reported. This method is based on metal film growth in ammonia ambient and subsequent oxidation under ultraviolet (UV) irradiation. X-ray photoelectronic spectroscopy confirmed the presence of nitrided interface layer with a thickness of ∼12 ?. Equivalent oxide thickness values of around 11.5 ? and leakage current densities lower than 1 × 10⁻⁴ A/cm² at an operation voltage (−1 V) were achieved. The post deposition ultraviolet oxidation process was performed to check the interface oxidation resistance. The interface growth rate showed that as the interface bonding characteristics changed from Si-N to Si-O predominant bonding system of nitrogen incorporated films, the activation energy for oxygen diffusion changed from 18.0 kJ/mol to 9.8 kJ/mol and the activation energy of undoped hafnia films was 2.3 kJ/mol in every growth region.     

多点分段单步校正法在接触式图像传感器扫描仪上的实现

提出了一种接触式图像传感器(CIS)扫描仪非均匀校正的新方法,能够快速高效地完成对CIS扫描仪彩色图像的非均匀校正,消除了CIS的颜色差异。采用多点分段单步法进行标定,采用现场可编程门阵列实现校正,并最终得到颜色均匀的彩色图像。对于分辨率高达1200 dpi的CIS扫描仪,采集一次样板纸完成全部颜色空间的分段标定,图像传输的同时完成校正,校正过程仅耗时0.125 s。实际应用效果显示校正后R,G,B三个通道的像素误差控制在5个像素以内,相比校正前图像均匀性提升10倍左右,比传统两点法提升3倍左右,且明显改善图像颜色突变、暗淡以及随机条纹等问题。     

通过构象诱导电感耦合机制光可逆调控有机场效应晶体管的性能

将有机场效应晶体管用于传感和开关实际应用的主要阻碍之一是其破坏性传感机制产生的一系列问题. 这里我们报道了一种智能的系统, 用光致变色分子螺吡喃(SP)和聚甲基丙烯酸甲酯(PMMA)结合作为栅介电材料, 得到的器件能以一种无损的方式, 通过光可逆调控器件的导电性能. 当螺吡喃分子发生可逆的光学异构时, 器件的电容和导电性随之发生显著而可逆的变化. 这种构象诱导电感耦合的作用机理提供了一种制备功能器件的新方法, 可以推广为利用其它刺激响应型分子来制备特定功能器件的普适性方法.     

基于FPGA的快速全场光学相干层析方法

针对全场光学相干层析术实用化时成像速度不高的问题,提出一种基于FPGA控制的相位调制快速全场光学相干层析系统成像方法.首先用FPGA搭建电路以产生频率可调的高准确度正弦信号与脉冲信号,然后利用所产生的信号作为调制频率,采用四步移相法获取光学断层图像.采用该方法对洋葱表皮细胞进行光学断层成像,并与传统相移法及采用单片机调制方式获取的图像进行对比,结果表明该方法不仅能提高成像质量,且对高分辨率光学断层图像的采集时间从目前的4s(0.25 Hz)减少到0.03~0.05s(20Hz~35Hz),提高了系统的成像速度.     

可见/近红外实时成像光谱仪控制系统设计

针对高光谱成像需求,设计了一套可见/近红外实时成像光谱仪.光谱仪基于声光可调谐滤波器(Acousto-Optic Tunable Filter,AOTF)分光器件进行设计,光谱带宽为1.3μm,其中可见光相机工作在400～1000 nm波段,近红外相机工作在1000～1700 nm波段.光谱仪控制系统以现场可编程门阵列...     

无线激光通信协议的设计

研究了无线激光通信（FSO）与传统激光通信的区别,编制了一套FSO物理层收发协议。采用现场可编程门阵列（FPGA）完成收发机与外部电路的数据通信,利用先入先出（FIFO）存储器完成收发协议与外部系统的接口。设计的物理层收发协议主要完成发送数据的编码、串行化以及接收数据的解串行化和解码。仿真实验结果表明：设计的收发协议可实现在40 Mbps通信速率下的稳定工作,证明了该收发协议设计的可行性。     

Novel Indium Arsenide double gate and gate all around nanowire MOSFETs for diminishing the exchange correlation effect: A quantum study

In this paper we present novel double gate (DG) metal oxide semiconductor field effect transistor (MOSFET) and gate all around (GAA) nanowire metal oxide semiconductor field effect transistor (NWT) with a diminished exchange-correlation (Ex-Corr) effect. The key idea in this work is to use Indium Arsenide (InAs) semiconductor instead of Si. We have evaluated and compared different parameters of DG-MOSFET and GAA-NWTs such as threshold voltage, sub-threshold slope, drain induced barrier lowering and ON and OFF state currents from quantum view. Quantum mechanical transport approach based on non-equilibrium green’s function (NEGF) has been performed in the frame work of effective mass theory in consideration with Ex-Corr effect. This simulation method consists of three dimensional Poisson’s equation in which a Schrodinger equation is first solved in each slice of the device to find Eigen energies and Eigen functions. Then, a transport equation of electrons moving in the sub-bands is solved. This fully quantum method treats such effects as source-to-drain tunneling, ballistic transport, and quantum confinement on equal footing. The results show that only a few lowest Eigen sub-bands are occupied and the upper sub-bands can be safely neglected. Also, the interaction between electrons and Ex-Corr effect is diminished in the proposed structure.     

Electrokinetic translocation of a deformable nanoparticle controlled by field effect in nanopores

Nanopores have become a popular single-molecule manipulation and detection technology. In this paper, we have constructed a continuum model of the nanopore; the arbitrary Lagrangian-Eulerian (ALE) method is used to describe the motion of particles and fluid. The mathematical model couples the stress-strain equation for the dynamics of a deformable particle, the Poisson equation for the electric field, the Navier-Stokes equations for the flow field, and the Nernst-Planck equations for ionic transport. Based on the model, the mechanism of field-effect regulation of particles passing through a nanopore is investigated. The results show that the transport of particles which is controlled by the field effect depends on the electroosmotic flow (EOF) generated by the gate electrode in the nanopore and the electrostatic interaction between the nanopore and particles. That also explains the asymmetry of particle transport velocity in the nanopore with a gate electrode. When the gate potential is negative, or the gate electrode length is small, the maximum deformation of the particles is increased. The field-effect regulation in the nanopore provides an active and compatible method for nanopore detection, and provides a convenient method for the active control of the particle deformation in the nanopore.