Accurate Small-Signal Model Extraction for pHEMT on GaAs

An accurate small-signal modeling approach applied to GaAs-based pHEMT devices is presented. The procedure for extracting equivalent-circuit model parameters is illustrated in detail. A genetic algorithm (GA) program is developed to optimize the model parameters in order to improve the modeling accuracy. The validity of modeling approach is verified by comparing the simulated and measured result of two pHEMTs and a fabricated ka-band power amplifier. The conclusion can be drawn that the proposed modeling method is rather accurate and efficient.     

Surface reconstructions and phase transitions on the GaAs(111)B surface

The (111)B surface of GaAs has been investigated using scanning tunneling microscopy (STM) and a number of different reconstructions have been found at different surface stoichiometries. In accordance with electron diffraction studies, we find the series (2 × 2), (1 × 1)_LT, ( ) and (1 × 1)_HT with increasing annealing temperature, corresponding to decreasing surface As concentration. The (1 × 1)_LT is of particular interest, since it only occurs in a narrow temperature window between the two more established reconstructions, the (2 × 2) and the ( ). We find the (1 × 1)_LT to take the form of a mixture of the local structures of both the (2 × 2) and ( ) phases, rather than having a distinct structure. This is behaviour consistent with a kinetically limited system, dominated by the supply of As adatoms to the surface, and may be an example of a continuous phase transition. Above the (1 × 1)_LT transition, atomic resolution images of the ( ) surface reveal only a three-fold symmetry of the hexagonal structural units, brought about by inequivalent surface bonding due to the 23.4° rotation of the surface unit cell relative to the substrate. This is responsible for the disorder found in the ( ) reconstruction, since the structure may form in one of two domains. At lower surface As concentration, the (1 × 1)_HT surface adopts a structure combining small domains of a 19.1° structure and random disorder. There is no apparent similarity between the (1 × 1)_LT and (1 × 1)_HT structures, which may be due to our measurements being conducted at room temperature and without an As flux to control the surface As concentration.     

Electronic structure of GaN nanotubes

Nanotube properties are strongly dependent on their structures. In this study, gallium nitride nanotubes (GaNNTs) are analyzed in armchair and zigzag conformations. The wurtzite GaN (0001) surface is used to model the nanotubes. Geometry optimization is performed at the PM7 semiempirical level, and subsequent single-point energy calculations are carried out via Hartree–Fock and B3LYP methods, using the 6-311G basis set. Semiempirical and ab initio methods are used to obtain strain energy, charge distribution, dipole moment, |HOMO-LUMO| gap energy, density of states and orbital contribution. The gap energy of the armchair structure is 3.82 eV, whereas that of the zigzag structure is 3.92 eV, in agreement with experimental data.     

Searching for gallium bioactive compounds: Gallium(III) complexes of tridentate salicylaldehyde semicarbazone derivatives

In the search for gallium bioactive compounds five Ga(III) complexes, [Ga^III(L-H)₂](NO₃), with tridentate salicylaldehyde semicarbazone derivatives as ligands (L) have been synthesized and characterized in the solid state and in solution by different techniques. The crystal structure of [Ga^III(L4-H)₂](NO₃)·2H₂O, where L4 is 3-ethoxysalicylaldehyde semicarbazone, was solved by X-ray diffraction methods. The gallium(III) ion is in a distorted octahedral environment, coordinated to two nearly planar and mutually perpendicular 3-ethoxysalicylaldehyde semicarbazonato anions acting as tridentate ligands through their phenol and carbonyl oxygen atoms and their azomethine nitrogen atom. Their biological potential has been explored by evaluating their activity on Mycobacterium tuberculosis, causative agent of tuberculosis, and their cytotoxicity on tumor cell lines. Three different human tumor cell lines were selected that show different degrees of resistance to metallodrugs: ovarian A2780 (low resistance), breast MCF7 (medium resistance) and prostate PC3 (high resistance) cells. Although the complexes have not shown activity on M. tuberculosis, complexation with gallium has led to the enhancement of the cytotoxic potencies of the organic compounds. Those complexes that contain a bromide substituent at the phenolate ring have shown the highest cytotoxicities. In particular, [Ga^III(L2-H)₂](NO₃), where L2 is 5-bromosalicylaldehyde semicarbazone,·has shown a remarkable cytotoxicity on A2780 tumor cell line with an IC₅₀ value of the same order than cisplatin (IC_{50 Ga-L2} = 2.4 ± 0.3 μM; IC_{50 cisplatin} = 2.0 ± 0.1 μM, 72 h incubation at 37 °C). Interestingly, this complex has also shown moderate cytotoxicity against MCF7 and PC3 cells (IC_{50 MCF7} = 30 ± 6; IC_{50 PC3} = 18 ± 3 μM). Therefore, this gallium compound could be considered a promising wide spectrum potential anti-tumor agent.     

InGaN growth with various InN mole fractions on m-plane ZnO substrate by metalorganic vapor phase epitaxy

We have demonstrated In_xGa_1−xN epitaxial growth with InN mole fractions of x=0.07 to 0.17 on an m-plane ZnO substrate by metalorganic vapor phase epitaxy for the first time. The crystalline quality of the epilayers was found to be much higher than that of epilayers grown on a GaN template on an m-plane SiC substrate.     

Magnetic pole pinning at rectangular defects on MnAs/GaAs(0 0 1)

Strong magnetic poles at characteristic rectangular defects have been observed using a magnetic force microscope on a MnAs(  1 0 0) thin film with the thickness of 30 nm. The MnAs thin film was epitaxially grown on a GaAs(0 0 1) substrate. The magnetic poles were in one-arranging direction, being independent of the magnetization direction of the film. The poles were pinned at the edges of the rectangular defects until just below the Curie temperature, and formed a stable magnetic-field loop on the MnAs surface. The stability of the magnetic pole pinning shows the distinctive feature of the magnetic domain structure on the surface with a strong anisotropy, which was built in the heterostructure of MnAs and GaAs.     

New Ga/N‐based Active Lewis Pairs,Trifunctional Ga–Ga Compounds,Reactions with Cyanamide and Dual Insertion of Isocyanate

Hydrogallation of Me₃Si–C≡C–NR'₂ with R₂Ga–H (R = tBu, CH₂tBu, iBu) yielded Ga/N‐based active Lewis pairs, R₂Ga–C(SiMe₃)=C(H)–NR'₂ ( 7 ). The Ga and N atoms adopt cis‐positions at the C=C bonds and show weak Ga–N interactions. tBu₂GaH and Me₃Si–C≡C–N(C₂H₄)₂NMe afforded under exposure of daylight the trifunctional digallium(II) compound [MeN(C₂H₄)₂N](H)C=C(SiMe₃)Ga(tBu)–Ga(tBu)C(SiMe₃)=C(H)[N(C₂H₄)₂NMe] ( 8 ), which results from elimination of isobutene and H₂ and Ga–Ga bond formation. 8 was selectively obtained from the ynamine and [tBu(H)Ga–Ga(H)tBu]₂[HGatBu₂]₂. 7a (R = tBu; NR'₂ = 2,6‐Me₂NC₅H₈) and H₈C₄N–C≡N afforded the adduct tBu₂Ga‐C(SiMe₃)=C(H)(2,6‐Me₂NC₅H₈) · N≡C–NC₄H₈ ( 11 ) with the nitrile bound to gallium. The analogous ALP with harder Al atoms yielded an adduct of the nitrile dimer or oligomers of the nitrile at room temperature. The reaction of 7a with Ph–N=C=O led to the insertion of two NCO groups into the Ga–C_vinyl bond to yield a GaOCNCN heterocycle with Ga bound to O and N atoms ( 12 ).     

The Gallides SrRh2Ga2, SrIr2Ga2, and Sr3Ir4Ga4

The gallides SrRh₂Ga₂, SrIr₂Ga₂, and Sr₃Rh₄Ga₄ were obtained from the elements by induction melting and subsequent annealing. They were investigated by powder and single‐crystal X‐ray diffraction: CaRh₂B₂ type, Fddd, a = 573.2(1), b = 1051.3(1), c = 1343.7(2) pm, wR₂ = 0.0218, 398 F² values, 15 variables for SrRh₂Ga₂; a = 576.0(1), b = 1045.5(1), c = 1350.6(3) pm for SrIr₂Ga₂, and Na₃Pt₄Ge₄ type, I$\bar{4}$ 3m, a = 777.4(2) pm, wR₂ = 0.0234, 190 F² values, 11 variables for Sr₃Ir₄Ga₄. The gallides SrRh₂Ga₂ and Sr₃Ir₄Ga₄ exhibit complex, covalently bonded three‐dimensional [Rh₂Ga₂] and [Ir₄Ga₄] networks with short Rh–Ga (241–246 pm) and Ir–Ga (243–259 pm) distances. The strontium atoms fill large cages within these networks. They are coordinated by 8 Rh + 10 Ga in SrRh₂Ga₂ and by 4 Ir + 8 Ga in Sr₃Ir₄Ga₄. The structure of SrRh₂Ga₂ is discussed along with the monoclinic distortion variants HoNi₂B₂ and BaPt₂Ga₂ on the basis of a group‐subgroup scheme.