Ca3N2 as a flux for crystallization of GaN

In this work Ca₃N₂ was investigated as a potential flux for crystallization of GaN. Melting temperature of the potential flux at high N₂ pressure evaluated by thermal analysis as 1380 °C is in good agreement with the theoretical prediction. It is shown that Ca₃N₂ present in the liquid gallium in small amount (1 at%) dramatically accelerates synthesis of GaN from its constituents. On the other hand, it does not influence significantly the rate of GaN crystallization from solution in gallium in temperature gradient for both unseeded and seeded configurations. However the habit and color of the spontaneously grown GaN crystals change drastically. For 10 mol% Ca₃N₂ content in the liquid Ga it was found that the GaN thick layer and GaN crystals (identified by micro-Raman scattering measurements) were grown on the substrate. For growth from molten Ca₃N₂ (100%) with GaN source, the most important observations were (i) GaN source material was completely dissolved in the molten Ca₃N₂ flux and (ii) after experiment, GaN crystals were found on the sapphire substrate.     

In-situ observations of dissolution process of GaSb into InSb melt by X-ray penetration method

Dissolution process of GaSb into InSb melt was observed by an X-ray penetration method. The intensity of X-rays penetrated through the rectangular shaped GaSb (seed)/InSb/GaSb (feed) sandwich sample was recorded by the CdTe line sensor detector. The penetrated X-ray intensities and images of the sample were obtained as a function of time and temperature. The gallium (Ga) composition profile of the sample was calculated as a function of time by making the calibration line with the penetrated X-ray intensities of GaSb and InSb standard samples. The calculated Ga composition profile of the grown sample agreed well with the data measured by energy dispersive X-ray spectroscopy analysis. The result suggested that lower GaSb seed dissolved faster than upper GaSb feed despite of the low temperature at the lower GaSb seed. It clearly indicates that the solutal transport induced by gravity strongly affects the dissolution process.     

Approach for dislocation free GaN epitaxy

The characteristics of confined epitaxial growth are investigated with the goal of determining the contributing effects of mask attributes (spacing, feature size) and growth conditions (V/III ratio, pressure, temperature) on the efficiency of the approach for dislocation density reduction of GaN. In addition to standard (secondary electron and atomic force) microscopy, electron channeling contrast imaging (ECCI) is employed to identify extended defects over large (tens of microns) areas. Using this method, it is illustrated that by confining the epitaxial growth, high quality GaN can be grown with dislocation densities approaching zero.     

Calcium Bis[bis(trimethylsilyl)amino‐triethylgallate] — A Molecule with Ca‐C‐Ga Three‐Center Bonds

The reaction of calcium‐bis[bis(trimethylsilyl)amide] with two equivalents triethylgallium yields nearly quantitatively the addition product. In the solid state the calcium atoms are coordinated by two nitrogen atoms and two ethyl groups, whereas in solution all ethyl substituents are magnetically equivalent even at low temperatures. The Ca‐C‐Ga two‐electron three‐center bonds show mean Ca‐N and Ca‐C distances of 243 and 268 pm, respectively.     

Accurate Small-Signal Model Extraction for pHEMT on GaAs

An accurate small-signal modeling approach applied to GaAs-based pHEMT devices is presented. The procedure for extracting equivalent-circuit model parameters is illustrated in detail. A genetic algorithm (GA) program is developed to optimize the model parameters in order to improve the modeling accuracy. The validity of modeling approach is verified by comparing the simulated and measured result of two pHEMTs and a fabricated ka-band power amplifier. The conclusion can be drawn that the proposed modeling method is rather accurate and efficient.     

Surface reconstructions and phase transitions on the GaAs(111)B surface

The (111)B surface of GaAs has been investigated using scanning tunneling microscopy (STM) and a number of different reconstructions have been found at different surface stoichiometries. In accordance with electron diffraction studies, we find the series (2 × 2), (1 × 1)_LT, ( ) and (1 × 1)_HT with increasing annealing temperature, corresponding to decreasing surface As concentration. The (1 × 1)_LT is of particular interest, since it only occurs in a narrow temperature window between the two more established reconstructions, the (2 × 2) and the ( ). We find the (1 × 1)_LT to take the form of a mixture of the local structures of both the (2 × 2) and ( ) phases, rather than having a distinct structure. This is behaviour consistent with a kinetically limited system, dominated by the supply of As adatoms to the surface, and may be an example of a continuous phase transition. Above the (1 × 1)_LT transition, atomic resolution images of the ( ) surface reveal only a three-fold symmetry of the hexagonal structural units, brought about by inequivalent surface bonding due to the 23.4° rotation of the surface unit cell relative to the substrate. This is responsible for the disorder found in the ( ) reconstruction, since the structure may form in one of two domains. At lower surface As concentration, the (1 × 1)_HT surface adopts a structure combining small domains of a 19.1° structure and random disorder. There is no apparent similarity between the (1 × 1)_LT and (1 × 1)_HT structures, which may be due to our measurements being conducted at room temperature and without an As flux to control the surface As concentration.     

The Gallides SrRh2Ga2, SrIr2Ga2, and Sr3Ir4Ga4

The gallides SrRh₂Ga₂, SrIr₂Ga₂, and Sr₃Rh₄Ga₄ were obtained from the elements by induction melting and subsequent annealing. They were investigated by powder and single‐crystal X‐ray diffraction: CaRh₂B₂ type, Fddd, a = 573.2(1), b = 1051.3(1), c = 1343.7(2) pm, wR₂ = 0.0218, 398 F² values, 15 variables for SrRh₂Ga₂; a = 576.0(1), b = 1045.5(1), c = 1350.6(3) pm for SrIr₂Ga₂, and Na₃Pt₄Ge₄ type, I$\bar{4}$ 3m, a = 777.4(2) pm, wR₂ = 0.0234, 190 F² values, 11 variables for Sr₃Ir₄Ga₄. The gallides SrRh₂Ga₂ and Sr₃Ir₄Ga₄ exhibit complex, covalently bonded three‐dimensional [Rh₂Ga₂] and [Ir₄Ga₄] networks with short Rh–Ga (241–246 pm) and Ir–Ga (243–259 pm) distances. The strontium atoms fill large cages within these networks. They are coordinated by 8 Rh + 10 Ga in SrRh₂Ga₂ and by 4 Ir + 8 Ga in Sr₃Ir₄Ga₄. The structure of SrRh₂Ga₂ is discussed along with the monoclinic distortion variants HoNi₂B₂ and BaPt₂Ga₂ on the basis of a group‐subgroup scheme.