Gallium(III) halide-catalyzed coupling of indoles with phenylacetylene: synthesis of bis(indolyl)phenylethanes

Indoles undergo smooth coupling with phenylacetylene in the presence of 10 mol % of gallium(III) chloride or gallium(III) bromide under mild conditions to afford the corresponding 1,1-bis(1H-3-indolyl)-1-phenylethanes in high yields and with high selectivity.     

火焰原子吸收法测定铅锌矿中微量镓

将样品中的硫化物用HNO3氧化为硫酸盐后，再用HNO3、HF、H2SO4进一步溶解，在6mol/LHCl介质中用乙酸丁酯萃取镓，水反萃取后，用火焰析子吸收法测定Ga，该法检出限为0．80μg/mL，相对标准偏差为2．1％，用该法测得国家一级标准品的结果均与推荐值相符。     

A Further Extension of Pnictide Oxide Chemistry – Synthesis and Structure of La2AuP2O

The phosphide oxide La₂AuP₂O was synthesized from lanthanum filings, dried La₂O₃, gold pieces, and ground red phosphorus in the ideal 1.33:0.33:1:2 ratio in an evacuated silica tube at 1473 K. Small single crystals were obtained by recrystallization in a NaCl/KCl flux. The structure was determined on the basis of single‐crystal X‐ray diffractometer data: new type, C2/m, a = 1537.3(3), b = 427.39(8), c = 1009.2(2) pm, β = 131.02(1) °, wR₂ = 0.046, 1102 F² values, 38 variables. La₂AuP₂O contains two striking structural motifs: The oxygen atoms are located in La₄ tetrahedra. The latter are cis‐edge‐shared forming polymeric cationic [La₂O]⁴⁺ chains. These cationic units are separated and charge‐balanced by [AuP₂]^4– polyanions which have monovalent gold in distorted trigonal planar phosphorus coordination. Two crystallographically independent phosphorus sites occur in the polyanion, i.e. isolated P^3– besides dumb‐bells P₂^4– (P2–P2 223 pm). La₂AuP₂O, which crystallizes in the form of ruby red transparent crystals, is an electron precise phosphide oxide (4La³⁺)(2Au⁺)(2P^3–)(P₂^4–)(2O^2–).     

On the Existence of the Trimer of Gallium Trichloride in the Gaseous Phase

The dependence of the gallium trichloride saturated and unsaturated vapor pressures on temperature was studied by the static method using a quartz membrane zero‐manometer and taking into account the volume of its working chamber and substance mass. Conclusions about the presence of a distinguishable amount of trimeric molecules along with dimeric and momomeric molecules in the vapor were drawn on the basis of the obtained data. The following rough thermodynamic characteristics of a gaseous trimer of gallium trichloride were calculated: Δ_fH° (Ga₃Cl₉, gas, 298 K) = –1466 kJ · mol^–1. S°(Ga₃Cl₉, gas, 298 K) = 654 J · mol^–1 · K^–1. These data were used to elucidate the composition of the gaseous phase at a total pressure of 1 atm in the temperature range of 400–750 K. The suggested existence of trimeric molecules was not contradicted by vibrational spectroscopic analysis of gallium trichloride saturated vapor.     

Determination of Gallium By Liquid-Liquid Extraction-Flame Atomic Absorption Spectrometry In Bayer Process Aluminate Solutions

Abstract

The described flame-atomic absorption determination of gallium involves the extraction of 8-hydroxyauinoline-Ga complex and the extraction of galhum as an ion association complex from strong hydrochloric acid into Methyl Isobutyl Ketone (MIBK). Both of the examined extraction systems were found to be workable for gallium determination in aqueous solutions. A comparison of mentioned extraction systems showed that only the second one can be applied for gallium determination in low concentration in aluminate solutions (strong alkaline). Finally, an analytical scheme for gallium determination in aluminate solutions is recommended (extraction of Ga from hydrochloric acid solutions, 3.0-50M, through matrix matched calibration curve). the proposed procedure was found to be simple, selective and accurate.     

n-GaAs为基的光电化学电池输出特性

GaAs 的禁带宽度为1.428eV,而且是直接跃迁,是光电化学电池中很好的电极材料.一些作者研究了 n-GaAs 为基的光电化学电池^[1,2].本文讨论了光强,化学刻蚀、氧化还原对浓度及离子修饰对 n-GaAs 光电化学电池输出特性的影响.所用的电极为低阻 n-GaAs[(100)面],N_D=5.1×10¹⁷cm^-3,试验前通高纯氮20分钟.测光强用的辐照计经上海计量局校正,其它测试方法同前文^[3].     

Solvothermal syntheses of Cu3P via reactions of amorphous red phosphorus with a variety of copper sources

Polycrystalline Cu₃P was successfully prepared under a wide variety of solvothermal conditions. The reaction of red phosphorus with several copper sources (copper metal, copper (I) iodide, copper (I) chloride and copper (II) chloride) at 150-200 °C for 1-2 days in water produced Cu₃P. Products were examined with powder X-ray diffraction, scanning electron microscopy and energy dispersive spectroscopy. Thermal analyses and optical spectroscopy were also performed. A detailed list of reaction conditions, products and impurity phases (where applicable) are reported.     

Preparation and lithium doping of gallium oxynitride by ammonia nitridation via a citrate precursor route

Gallium oxynitride, isostructural to hexagonal gallium nitride (h-GaN), was obtained by ammonia nitridation of a precursor prepared from the addition of citric acid to an aqueous solution of gallium nitrate. Gallium oxynitride produced at 750 °C had a small amount of gallium vacancies, and was formulated as (Ga_0.89□_0.11) (N_0.66O_0.34) where the symbol □ stands for gallium vacancy. Both the gallium vacancies and oxygen substituted for nitrogen were randomly distributed within the structure. The amount of vacancies decreased with nitridation temperatures in the range of 750-850 °C. Approximately, 10 at% Li⁺ was doped into the gallium oxynitride, using a similar preparation with the additional presence of lithium nitrate, resulted in the random substitution of Ga³⁺ in an atomic ratio of Li/Ga<1 at 750 °C. Oxygen was codoped with lithium and substituted nitrogen in the wurtzite-type crystal lattice. These substitutions reduced the electrical conductivity in the gallium oxynitride semiconductor. A new oxynitride, Li₂Ga₃NO₄, was also obtained with Li₂CN₂ impurity using similar preparations from a mixture of Li/Ga?1. The crystal structure was isostructural with h-GaN, and was refined as P6₃mc with a=0.31674(1) nm, and c=0.50854(2) nm. The Ga and Li occupancies at the 2b site were refined to be 0.6085 and 0.3915, respectively, assuming that the other 2b site was randomly occupied with 1/5O and 4/5N. When the new compound was washed for over 1 min for the removal of Li₂CN₂ impurities, it was decomposed to a mixture of α-GaOOH and α-LiGaO₂. The as-prepared product with Li/Ga=1 showed the highest intensity in yellow luminescence among the products under excitation at 254 nm.     

Studies on controlled potential coulometric determination of gallium in sodium perchlorate and sodium thiocyanate

Controlled potential coulometric (CPC) studies were carried out for developing a method to determine gallium at milligram levels, in the mixed supporting electrolyte medium (4 M NaClO₄ + 0.5 M NaSCN), employing stirring mercury as a working electrode. Investigations for optimization of working electrode potentials, quantity of charge, level of background current and electrolysis time for achieving quantitative reduction of Ga(III) to Ga and its oxidation back to Ga(III), were undertaken. Effect of gallium content and interference of zinc in of gallium determination were also studied. The developed methodology was employed for the determination of gallium in pure Ga as well as in synthetic U + Ga mixture solutions. Accuracy and precision values of better than 0.5% were obtained at 1-2 mg levels.     

Modellbetrachtungen zum Verständnis unerwarteter Eigenschaften der metalloiden Clusterverbindung [Ga84(N(SiMe3)2)20][Li6Br2(THF)20]·2Toluol

Towards the Understanding of the Unexpected Properties of the Metalloid Cluster Compound [Ga₈₄(N(SiMe₃)₂)₂₀][Li₆Br₂(THF)₂₀]·2Toluol In several short communications we have recently reported on the electrical and superconducting properties of the crystalline title compound 1 which contains anionic Ga₈₄R₂₀‐moieties. Here we present a collection of these results, complemented and interpreted by using DFT‐calculations on model clusters (Ga₈₄(NH₂)₂₀^?). These calculations allow a) a first insight into the dynamics of the Ga₈₄‐moieties (e.g. a rotation of the central Ga₂‐dumbbell) and thus an explanation of the temperature‐dependent Ga‐NMR‐spectra described recently, and b) estimations on the lattice energy of 1 and its resulting unexpected energetic stabilization compared to metallic gallium. A possible contribution of the cations in the electrical conduction mechanism of 1 can also be made feasible with model calculations. The basis for all the results presented is to be found in the “perfect” arrangement of nanoscopic Ga₈₄‐clusters in the crystal. This theoretically predicted condition for superconductivity in a “chain” of identical metal cluster molecules is a requirement which can hardly be realized by means of physical fabrication methods. Therefore, on the one hand the results presented here make for some disillusionment in the field of nanoscience, but on the other hand, especially in the field of synthetic chemistry, they present rewarding challenges for fundamental work in the future.