Preparation and lithium doping of gallium oxynitride by ammonia nitridation via a citrate precursor route

Gallium oxynitride, isostructural to hexagonal gallium nitride (h-GaN), was obtained by ammonia nitridation of a precursor prepared from the addition of citric acid to an aqueous solution of gallium nitrate. Gallium oxynitride produced at 750 °C had a small amount of gallium vacancies, and was formulated as (Ga_0.89□_0.11) (N_0.66O_0.34) where the symbol □ stands for gallium vacancy. Both the gallium vacancies and oxygen substituted for nitrogen were randomly distributed within the structure. The amount of vacancies decreased with nitridation temperatures in the range of 750-850 °C. Approximately, 10 at% Li⁺ was doped into the gallium oxynitride, using a similar preparation with the additional presence of lithium nitrate, resulted in the random substitution of Ga³⁺ in an atomic ratio of Li/Ga<1 at 750 °C. Oxygen was codoped with lithium and substituted nitrogen in the wurtzite-type crystal lattice. These substitutions reduced the electrical conductivity in the gallium oxynitride semiconductor. A new oxynitride, Li₂Ga₃NO₄, was also obtained with Li₂CN₂ impurity using similar preparations from a mixture of Li/Ga?1. The crystal structure was isostructural with h-GaN, and was refined as P6₃mc with a=0.31674(1) nm, and c=0.50854(2) nm. The Ga and Li occupancies at the 2b site were refined to be 0.6085 and 0.3915, respectively, assuming that the other 2b site was randomly occupied with 1/5O and 4/5N. When the new compound was washed for over 1 min for the removal of Li₂CN₂ impurities, it was decomposed to a mixture of α-GaOOH and α-LiGaO₂. The as-prepared product with Li/Ga=1 showed the highest intensity in yellow luminescence among the products under excitation at 254 nm.     

Studies on controlled potential coulometric determination of gallium in sodium perchlorate and sodium thiocyanate

Controlled potential coulometric (CPC) studies were carried out for developing a method to determine gallium at milligram levels, in the mixed supporting electrolyte medium (4 M NaClO₄ + 0.5 M NaSCN), employing stirring mercury as a working electrode. Investigations for optimization of working electrode potentials, quantity of charge, level of background current and electrolysis time for achieving quantitative reduction of Ga(III) to Ga and its oxidation back to Ga(III), were undertaken. Effect of gallium content and interference of zinc in of gallium determination were also studied. The developed methodology was employed for the determination of gallium in pure Ga as well as in synthetic U + Ga mixture solutions. Accuracy and precision values of better than 0.5% were obtained at 1-2 mg levels.     

Gallium metal mediated allylation of carbonyl compounds and imines under solvent-free conditions

Gallium metal is effective in mediating the allylation of various carbonyl compounds and imines under solvent-free conditions, with the application of sonic energy, affording the corresponding homoallylic alcohols and amines. The imines themselves were also prepared under solventless conditions in high yield, thereby establishing a two-step solvent-free synthesis of homoallylic amines. In comparison, indium metal produced a mixture of the desired homoallylic secondary amine and the bis-allylated species via an iminium ion intermediate.     

Ion-exchange selectivity and chromatographic separation of trivalent metals on titanium antimonate

Summary The ion exchange selectivity of trivalent metal ions has been determined on titanium antimonate cation exchanger prepared by coprecipitation of antimony to titanium at different mole ratios. The selectivity sequence Al³⁺<Cr³⁺<Ga³⁺<In³⁺<Fe³⁺ was found for trivalent metal ions at an initial concentration of 10^–4 mol dm^–3 in nitric acid media. A high separation factor ^Ga/Al = Kd^Ga/Kd^Al, 4.8×10³, was observed for the Ga³⁺–Al³⁺ pair on titanium antimonate with an antimony to titanium ratio of 0.34. The effective separation of Ga³⁺ and In³⁺ from Al³⁺ was achieved using a 3 cm×0.5 cm i.d. column containing titanium antimonate with an antimony to titanium ratio of 0.34.     

Synthese und thermische Eigenschaften von molekularen Clusterverbindungen zusammengesetzt aus Elementen der Gruppen 11‐13‐16

Syntheses and Thermal Properties of Cluster Molecules, formed from Groups 11‐13‐16 Elements In the presence of PPh₃, CuX (X = Cl, CH₃COO) or AgOC(O)C₆H₅ and GaCl₃ react in THF with S(SiMe₃)₂ or Se(SiMe₃)₂ to yield [Cu₆Ga₈Cl₄S₁₃(PPh₃)₆] ( 1 ), [Cu₆Ga₈Cl₄Se₁₃(PPh₃)₆] ( 2 ), [Ag₆Ga₈Cl₄S₁₃(PPh₃)₆] ( 4 ) and [Ag₆Ga₈Cl₄Se₁₃(PPh₃)₆] ( 5 ). The use of PⁿPr₂Ph instead of PPh₃ and subsequent layering with n‐hexane leads to the formation of the cluster [Cu₆Ga₈Cl₄Se₁₃(PⁿPr₂Ph)₁₂] ( 3a , 3b ). Reaction of CuCl, GaCl₃ and PⁿPr₃ with Se(SiMe₃)₂ in THF results in the crystallisation of the ionic cluster (HPⁿPr₃)₂[Cu₂Ga₄Cl₄Se₆(PⁿPr₃)₄] ( 6 ). The structures of 1 — 6 were determined by X‐ray single crystal structure analysis. Thermogravimetric measurements of the cluster molecules and powder diffraction patterns of the remaining powders reveal the potential use of them as single source precursor compounds for the synthesis of the related ternary solid state materials.     

Organoelement Compounds with Al?Al,Ga?Ga,and In?In Bonds

In the attempt to synthesize compounds with aluminum in a low oxidation state and an Al Al bond, by the reduction of alkylaluminum halides with alkali metals, analogous to a Wurtz coupling, in general the deposition of elemental aluminum and the formation of the corresponding trialkylaluminum compounds is observed. Thus, tetrasubstituted dialuminum compounds R₂Al AlR₂, apart from a few poorly characterized examples, were for a long time considered part of an unverified class of substances. Only with the sterically very highly shielded tetrakis[bis(trimethylsilyl)methyl]dialuminum did we achieve the synthesis of the first completely characterized organoelement compound with unlimited stability, which shows aluminum in the oxidation state + II and has an Al Al bond. In the meantime, corresponding compounds for the elements gallium and indium have been obtained. With the simple access to tetrasubstituted dimetal compounds, a fascinating new research area has opened for preparative chemistry, in which the particular interest will naturally lie in the reactive properties of the metal-metal bond.     

Struktur‐ und magnetochemische Untersuchungen an KCuGaF6

Structural and Magnetochemical Studies on KCuGaF₆ The crystal structure of KCuGaF₆ was determined on the base of X‐ray single crystal data (wR₂ = 0.084 for 2476 independent reflections). The compound crystallizes with a = 728.56(4), b = 989.51(6), c = 676.27(3) pm, β = 93.120(5)°, Z = 4 in space group P2₁/c of the pyrochlore related KCuCrF₆ type. The octahedral coordinations [GaF₆] and [CuF₆] are slightly resp. strongly distorted (mean values Ga‐F: 188.2 pm resp. Cu‐F: 188.2/200.1/227.6 pm). The longest distances Ga‐F and the shortest ones Cu‐F are found within octahedral chains of these two kinds of atoms, running along [100] and [001], resp., and being mutually bridged as well (M‐F‐M in between 114 and 145°). The magnetic mole susceptibilities measured at powders and at a single crystal follow the isotropic Heisenberg model for S = ¹/₂, if effects of chain disrupture are considered in the form of some paramagnetic portion. No indication of threedimensional magnetic order is observed down to T = 2 K and low magnetic fields H < 100 G. KCuGaF₆ (J/k = —71 K for the powder) is distinguished this way from the chain structure compounds KCuAlF₆ und Na₂CuScF₇ (J/k = —76 resp. —59 K) which were also magnetically studied and yield similar antiferromagnetic exchange constants J/k.     

High temperature enthalpy and heat capacity of GaN

The heat capacity and the heat content of gallium nitride were measured by calvet calorimetry (320-570 K) and by drop calorimetry (670-1270 K), respectively. The temperature dependence of the heat capacity in the form C_pm=49.552+5.440×10⁻³T−2.190×10⁶T⁻²+2.460×10⁸T⁻³ was derived by the least squares method. Furthermore, thermodynamic functions calculated on the basis of our experimental results and literature data on the molar entropy and the heat of formation of GaN are given.     

火焰原子吸收法测定铅锌矿中微量镓

将样品中的硫化物用HNO3氧化为硫酸盐后，再用HNO3、HF、H2SO4进一步溶解，在6mol/LHCl介质中用乙酸丁酯萃取镓，水反萃取后，用火焰析子吸收法测定Ga，该法检出限为0．80μg/mL，相对标准偏差为2．1％，用该法测得国家一级标准品的结果均与推荐值相符。     

镓-铬蓝黑R络合吸附波的研究及应用

在0.012mol/L HAc-0.10mol/L NaAc缓冲溶液中pH5.60,铬蓝黑R于-0.34V(vs.SCE)处有一极谱波P_1,加入Ga(Ⅲ),在-0.55V(vs.SCE)处产生一灵敏的极谱波P_2。i_p_2与Ga(Ⅲ)浓度在0.20～15.0μg/25ml范围内呈线性关系。试验表明,该极谱波属络合吸附波。本法用于测定铝箔、铅锌矿中微量镓,结果满意。