Bifurcation and locking in an multi-quantum-well laser subjected to external injection

Bifurcation and dynamic stability as well as locking in an external light injection multi-quantum-well (MQW) laser are studied. Different dynamic regimes in locking diagram are analyzed with the injection level and frequency detuning. Bifurcate behavior is numerically simulated via the external injection light intensity, frequency detuning, current, linewidth enhance factor, photon loss rate and carrier loss rate, respectively. And the route to chaos from bifurcation, period-doubling and quasi-period are described by numerical analysis. A perturbation equation of four-dimension model and the bifurcation condition are demonstrated. Dynamic stability of the laser is theoretically and numerically analyzed. The bifurcate expression is theoretically given while the maximum locking frequency domain is given. The variational characteristic of the oscillation frequency in the self-pulse regimes versus the injection and detuning are numerically analyzed to find that the relaxation frequency is reduced with adding the detuning in the smaller detuning or with adding the injection in the smaller injection while the relaxation frequency will be increased with adding the detuning in the larger detuning or with adding the injection in the larger injection. We find also that the chaotic spectra are broadened with adding the detuning or narrowed with adding the injection or the current.     

1.55μmSi_(1-x)Ge_x光波导与Si_(1-x)Ge_x/Si多量子阱探测器集成的优化设计

对１．５５μｍ波长的Ｓｉ１－ｘＧｅｘ光波导和Ｓｉ１－ｘＧｅｘ／Ｓｉ多量子阱（ＭＱＷ）红外探测器的集成器件结构进行了系统的分析和优化设计。优化结果为：１）对Ｓｉ１－ｘＧｅｘ光波导，Ｇｅ含量ｘ＝０．０５，脊宽、高和腐蚀深度分别为８、３和２．６μｍ；２）对Ｓｉ１－ｘＧｅｘ／Ｓｉ多量子阱红外探测器，Ｇｅ含量ｘ＝０．５，探测器由厚度为５５０ｎｍ、２３个周期的６ｎｍＳｉ０．５Ｇｅ０．５＋１７ｎｍＳｉ组成，长度约２ｍｍ。结果表明，这种结构器件的内量子效率可达８８％。     

Self-aligned Coupled Waveguide Distributed Bragg Reflector Lasers

A novel self-aligned coupled waveguide (SACW) multi-quantum-well (MQW) distributed Bragg reflector (DBR) laser is proposed and demonstrated for the first time. By selectively removing the MQW layer and leaving the low SCH/SACW layer the Bragg grating is partially formed on this layer. By optimizing the thickness of the low SCH/SACW layer, a-80% coupling efficiency between the MQW gain region and the passive region are obtained. The typical threshold current of the SACW DBR laser is 39 mA, the slope efficiency can reach to 0.2 mW/mA and the output power is more than 20 mW with a more than 30dB side mode suppression ratio.     

多量子阱波导等效折射率的新公式

利用转移矩阵技术,建立了薄膜近似下的多量子阱波导芯子区域等效折射率的解析公式。该公式是偏振态和量子阱波导折射率分布的函数。     

退火对AlGaInP/GaInP多量子阱 LED外延片性能的影响

采用LP-MOCVD技术在n-GaAs衬底上生长了AlGaInP/GaInP多量子阱红光LED外延片.研究表明退火对外延片性能有重要影响.与未退火样品相比,460℃退火15min,外延片p型GaP层的空穴浓度由5.6×10¹⁸cm^-3增大到6.5×10¹⁸cm^-3,p型AlGaInP层的空穴浓度由6.0×10¹⁷cm^-3增大到1.1×10¹⁸cm^-3.但退火温度为780℃时,p型GaP层和p型AlGaInP层的空穴浓度分别下降至8×10¹⁷cm^-3和1.7×10¹⁷cm^-3,且Mg原子在AlGaInP系材料中的扩散加剧,导致未掺杂AlGaInP/GaInP多量子阱呈现p型电导.在460～700℃退火范围内,并没有使AlGaInP/GaInP多量子阱的发光性能发生明显变化.但退火温度为780℃时,AlGaInP/GaInP多量子阱的发光强度是退火前的2倍.     

多量子阱中注入载流子的非均匀分布

根据多量子阱中注入载流子的输运机制,计算了多量子阱中注入载流子的非均匀分布.引入不均匀度参量Asy来衡量载流子分布的不均匀程度,分析了各种敏感因素对载流子非均匀分布的影响.指出注入载流子分布的非均匀性,随量子阱数、注入电流、量子垒高度的增加而显著增加,随工作温度的升高而减小.     

用直接模拟法分析量子阱半导体激光器瞬态响应

根据光增益与载流子密度的对数关系,通过适应于多量子阱激光器的速率方程的直接模拟分析,得到了注入电流、阱数和腔长对多量子阱激光器的激射阈值、开关延迟时间、弛豫振荡频率和光输出等参量之间的依赖关系.运用相图确立了在瞬态过程中,载流子数密度和光子数密度之间的转化过程.从而为改善量子阱激光器的高频调制特性以及优化设计器件结构参数提供了理论依据.     

GaAs／GaAlAs多量子阱反射型光调制器及自电光效应器件

采用分子束外延技术生长含有大周期数的ＧａＡｓ／ＧａＡｌＡｓ多量子阶（ＭＱＷ）及分布布喇格反射器（ＤＢＲ）的ＰＩＮ结构器件。研究了量子限制斯塔克效应（ＱＣＳＥ），分布布喇格反射及非对称腔模（ＡＳＦＰ）效应对光的反射调制作用及这三种效应的兼容性对光调制及逻辑器件的重要影响。给出我们研制的反射型光调制器及自电光效应器件的实验结果。对于常通型及常闭型调制器，其两态衬比度可达１０ｄＢ。所研制的ＳＥＥＤ器件，其导通光能耗低于１０ｆＪ／（μｍ）￣２，实现其光学双稳态及Ｒ－Ｓ光触发器工作。     

Intensity noise of mode-locked fiber grating external cavity semiconductor lasers

The noise of hybrid soliton pulse source (HSPS) with linearly chirped Gaussian apodized fiber Bragg grating is analyzed by couple-mode equations including spontaneous emission noise when HSPS is mode-locked. Relative intensity noise (RIN) is calculated using numerical solutions of these equations. It is shown that transform-limited pulses are generated over a wide tuning range around the fundamental mode-locking frequency with low spontaneous noise. However, high noise level affects the operation of device, and therefore transform-limited pulses are not obtainable over a wide tuning range. Linewidth enhancement factor and spontaneous coupling factor are the most effective noise parameters and noise increases with increasing value of these parameters.     

采用多量子阱光折变器件的新型相干光通信接收方案探索

探索一种采用多量子阱光折变器件的新型相干空间光通信接收方案,和传统的差拍方案相比,可以省掉繁琐的中频跟踪电子学系统,并对大气光通信传输常见的波面畸变、偏振面无规律变化及多普勒频移等干扰有所抑制。也报道该方案零拍接收以及器件性能研究的实验结果。