Two-dimensional electron transport in AlGaN/GaN heterostructures

We present a theoretical study of electron transport properties of two-dimensional electron gas in AlGaN/GaN heterostructures. By assuming a drifted Fermi–Dirac distribution and taking into account all major scattering mechanisms, including polar optical and acoustic phonons, background impurities, dislocation and interface roughness, the momentum- and energy-balance equations derived from Boltzmann equation are solved self-consistently. The dependence of the electron drift velocity and electron temperature as a function of the applied electric field are obtained and discussed.     

Photo‐capacitance spectroscopy investigation of deep‐level defects in AlGaN/GaN hetero‐structures with different current collapses

We have investigated electronic deep levels in two AlGaN/GaN hetero‐structures with different current collapses grown at 1150 and 1100 °C by a photo‐capacitance spectroscopy technique, using Schottky barrier diodes. Three specific deep levels located at ～2.07, ～2.80, and ～3.23 eV below the conduction band were found to be significantly enhanced for severe current collapse, being in reasonable agreement with photoluminescence and capacitance–voltage characteristics. These levels probably originate in Ga vacancies and residual C impurities and are probably responsible for the current collapse phenomena of the AlGaN/GaN hetero‐structures. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Emittance measurement & optimization for the photocathode RF gun with laser profile shaping

The Laser Undulator Compact X-ray source(LUCX) is a test bench for a compact high brightness X-ray generator,based on inverse Compton Scattering at KEK,which requires high intensity multi-bunch trains with low transverse emittance.A photocathode RF gun with emittance compensation solenoid is used as an electron source.Much endeavor has been made to increase the beam intensity in the multi-bunch trains.The cavity of the RF gun is tuned into an unbalanced field in order to reduce space charge effects,so that the field gradient on the cathode surface is relatively higher when the forward RF power into gun cavity is not high enough.A laser profile shaper is employed to convert the driving laser profile from Gaussian into uniform.In this research we seek to find the optimized operational conditions for the decrease of the transverse emittance.With the uniform driving laser and the unbalanced RF gun,the RMS transverse emittance of a 1 nC bunch has been improved effectively from 5.46 πmm.mrad to 3.66 πmm.mrad.     

A theoretical study of band structure properties for III–V nitrides quantum wells

Reliable and precise knowledge about the strain and composition effects on the band structure properties is crucial for the optimization of InGaN based heterostructures for electronic and optoelectronic device applications. AlInGaN as quaternary barrier material permits to control the band gap and the lattice constant independently. Using the model solid theory and the multi-band k.p interaction model, we investigate the composition effects on band offsets and band structure for pseudomorphic Ga_1−xIn_xN/Al_zIn_yGa_1−y−zN (0 0 1) heterointerfaces having zinc-blende structure. The results show that both conduction and valence band states are strongly modified while varying In and Al contents in the well and barrier materials. Furthermore, it is found that using AlInGaN as the barrier material allows the design of heterostructures including InGaN wells with tensile, zero or compressive strain. Such results give new insights for III-nitride compounds based applications and especially may guide the design of white-light emission diodes.     

北京大学高平均流强光阴极电子枪驱动激光系统

DC-SC超导光阴极注入器将直流光阴极电子枪和超导加速腔结合在一起,其特点之一是适合于提供高平均流强电子束.文中介绍了直流光阴极电子枪的驱动激光系统的研制.该驱动激光系统的主机为瑞士TBP公司的GE-100-XHP型激光器,是采用可饱和吸收镜技术的被动锁模激光器,其工作晶体为Nd:YVO₄,输出波长为1064nm,脉冲重复频率为81.25MHz,平均功率10W.该驱动激光系统配套的CLX-1100同步控制器可以将激光脉冲与射频参考信号严格锁定,随机抖动不大于1ps.根据使用要求,作者研制了高效的激光倍频器,获得了大于1W的266nm紫外激光.同时,激光到光阴极的传输设计中,采用了傅立叶光学技术,在紫外激光功率650mW左右的条件下,从自行研制的Cs₂Te光阴极上实现了大于500μA的光电流引出     

GaN激子跃迁的时间分辨光谱学研究

用时间分辨光谱学方法研究低压有机金属化学汽相沉积生长的ＧａＮ中自由，束缚激子（ＢＸ）的跃迁，讨论了这些跃迁的光致发光谱，复合寿命及其与温度的关系，给出了中性施主束缚激子和自由激子（ＦＸ）的辐射复合寿命分别为０．１２ｎｓ和０．４ｎｓ。     

飞秒激光脉冲与金属光阴极相互作用

本文从理论上分析了飞秒激光与光阴极相互作用过程，采用双温模型分析了飞秒激光脉冲辐照下金属薄膜的温度效应。通过建立一个简单的光电效应模型，获得了最佳的金属光阴极厚度，通过该模型可以发现，产生的光电流对在飞秒激光脉冲辐照下的电子温度和晶格温度有着很大的依赖关系。     

Surface and interface electronic properties of group III-nitride heterostructures

For group III-nitrides with wurtzite structure the presence of fixed polarization interface charges yields new challenges in order to understand and control Schottky barrier heights, band offsets and 2D confinement in heterostructure FETs. In this short review experimental results obtained by in situ photoemission spectroscopy on MBE AlGaN/GaN heterostructures grown on 6H–SiC are discussed, with emphasis on the presence and interplay of surface electronic states. Schrödinger–Poisson calculations are performed to get the complete band scheme at the selected heterojunctions. Results on the polarity dependence of Pt/GaN Schottky barrier values from the literature are also discussed.     

采用N2-RF等离子体氮化GaAs(001)

研究了在MBE系统中,GaAs(001)表面的氮化过程。GaAs(001)表面直接和间接地暴露在等离子体激发的N₂气流下。两种氮化过程显示了完全不同的表面氮化结果。在打开N₂发生器挡板的情况下,氮化导致GaAs(001)表面损伤,并且形成多晶结构。当增加N₂气压时,损伤变得更严重。但是,在关闭N₂发生器挡板的情况下,在500℃下,经过氮化将观察到(3×3)再构的RHEED花样,表面仍保持原子级的平整度。上述结果表明,不开N₂发生器挡板,低温(500℃下)氮化将在GaN外延生长之前形成平整的薄层c-GaN。