氢化物气相外延生长的GaN膜中的应力分析

对在c面蓝宝石上用氢化物气相外延法(HVPE)生长的六方相纤锌矿结构的GaN膜中的应力进行了分析。高分辨X射线衍射(002)面和(102)面摇摆曲线扫描(半高宽数值分别为317和358角秒)表明生长的GaN膜具有较好的晶体质量。利用高分辨X射线衍射技术准确测量了制备的GaN膜的晶格常数,并计算得到GaN膜中面内双轴应变和面外双轴应变分别为3.37×10-4和-8.52×10-4,等静压应变为-7.61×10-5。拉曼光谱和激光光致发光谱测试表明HVPE-GaN外延膜具有较好的光学特性,利用拉曼光谱的E₂模式特征峰和激光光致发光谱中近带边发射峰的频移定量计算了外延膜中的面内双轴压应力和等静压应力。两种方法得到的面内双轴压应力较为相符。     

Electrical characteristics of AlInN/GaN HEMTs under cryogenic operation

Electrical properties of an AlInN/GaN high-electron mobility transistor (HEMT) on a sapphire substrate are investi-gated in a cryogenic temperature range from 295 K down to 50 K. It is shown that drain saturation current and conductance increase as transistor operation temperature decreases. A self-heating effect is observed over the entire range of temperature under high power consumption. The dependence of channel electron mobility on electron density is investigated in detail. It is found that aside from Coulomb scattering, electrons that have been pushed away from the AlInN/GaN interface into the bulk GaN substrate at a large reverse gate voltage are also responsible for the electron mobility drop with the decrease of electron density.     

未钝化和H钝化GaN纳米线的电子结构

用密度泛函理论研究直径为9.5Å,15.9Å和22.5Å,未钝化和H钝化GaN纳米线的能带和态密度.结果表明:未钝化和H钝化GaN纳米线的能隙都是直接带隙,未钝化GaN纳米线的禁带宽度随着直径的增加减小,但是变化不明显,H钝化GaN纳米线的禁带宽度随着直径增大也是减小的,但是减小的幅度比未钝化的大.未钝化GaN纳米线表面N原子的2p电子主要聚集在价带顶,表面Ga原子的4p电子主要聚集在导带底,这两种电子都具有很强的局域性,而且决定着能隙值;加H钝化可以消除表面原子产生的表面效应.     

Photoemission of graded-doping GaN photocathode

We study the photoemission process of graded-doping GaN photocathode and find that the built-in electric fields can increase the escape probability and the effective diffusion length of photo-generated electrons,which results in the enhancement of quantum efficiency.The intervalley scattering mechanism and the lattice scattering mechanism in high electric fields are also investigated.To prevent negative differential mobility from appearing,the surface doping concentration needs to be optimized,and it is calculated to be 3.19×10 17 cm 3.The graded-doping GaN photocathode with higher performance can be realized by further optimizing the doping profile.     

Influence of cesium on the stability of a GaAs photocathode

The stability of a reflection-mode GaAs photocathode has been investigated by monitoring the photocurrent and the spectral response at room temperature.We observe the photocurrent of the cathode decaying with time in the vacuum system under the action of Cs current,and find that the Cs atoms residing in the vacuum system are helpful in prolonging the life of the cathode.We examine the evolution and analyse the influence of the barrier on the spectral response of the cathode.Our results support the double dipolar model for the explanation of the negative electron affinity effect.     

Effects of the strain relaxation of an AlGaN barrier layer induced by various cap layers on the transport properties in AlGaN/GaN heterostructures

The strain relaxation of an AlGaN barrier layer may be influenced by a thin cap layer above, and affects the transport properties of AlGaN/GaN heterostructures. Compared with the slight strain relaxation found in AlGaN barrier layer without cap layer, it is found that a thin cap layer can induce considerable changes of strain state in the AlGaN barrier layer. The degree of relaxation of the AlGaN layer significantly influences the transport properties of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructures. It is observed that electron mobility decreases with the increasing degree of relaxation of the AlGaN barrier, which is believed to be the main cause of the deterioration of crystalline quality and morphology on the AlGaN/GaN interface. On the other hand, both GaN and AlN cap layers lead to a decrease in 2DEG density. The reduction of 2DEG caused by the GaN cap layer may be attributed to the additional negative polarization charges formed at the interface between GaN and AlGaN, while the reduction of the piezoelectric effect in the AlGaN layer results in the decrease of 2DEG density in the case of AlN cap layer.     

Growth and properties of wide spectral white light emitting diodes

Wide spectral white light emitting diodes have been designed and grown on a sapphire substrate by using a metal-organic chemical vapor deposition system. Three quantum wells with blue-light-emitting, green-light-emitting and red-light-emitting structures were grown according to the design. The surface morphology of the film was observed by using atomic force microscopy. The films were characterized by their photoluminescence measurements. X-ray diffraction θ/2θ scan spectroscopy was carried out on the multi-quantum wells. The secondary fringes of the symmetric ω/2θ X-ray diffraction scan peaks indicate that the thicknesses and the alloy compositions of the individual quantum wells are repeatable throughout the active region. The room temperature photoluminescence spectra of the structures indicate that the white light emission of the multi-quantum wells is obtained. The light spectrum covers 400-700 nm, which is almost the whole visible light spectrum.     

Luminescence of a GaN grain with a nonpolar and semipolar plane in relation to microstructural characterization

We report on the growth of the high-quality GaN grain on a r-plane sapphire substrate by using a self-organized SiN interlayer as a selective growth mask.Transmission electron microscopy,scanning electron microscopy,and Raman spectroscopy are used to reveal the effect of SiN on the overgrown a-plane GaN growth.The SiN layer effectively terminates the propagation of the threading dislocation and basal plane stacking faults during a-plane GaN regrowth through the interlayer,resulting in the window region shrinking from a rectangle to a "black hole".Furthermore,strong yellow luminescence(YL) in the nonpolar plane and very weak YL in the semipolar plane on the GaN grain is revealed by cathodoluminescence,suggesting that C-involved defects are responsible for the YL.     

量子阱生长气压对InGaN/GaN黄光LED光电性能的影响

采用MOCVD技术在图形化硅衬底上生长了InGaN/GaN多量子阱黄光LED外延材料,研究了不同的量子阱生长气压对黄光LED光电性能的影响。使用高分辨率X射线衍射仪（HRXRD）和荧光显微镜（FL）对晶体质量进行了表征,使用电致发光系统积分球测试对光电性能进行了表征。结果表明：随着气压升高,In的并入量略有降低且均匀性更好,量子阱中的点缺陷数目降低,但是阱垒间界面质量有所下降。在实验选取的4个气压4,6.65,10,13.3 kPa下,外量子效率最大值随着量子阱生长气压的上升而显著升高,分别为16.60%、23.07%、26.40%、27.66%,但是13.3 kPa下生长的样品在大电流下EQE随电流droop效应有所加剧,在20 A·cm^-2的工作电流下,样品A、B、C、D的EQE分别为16.60%、19.77%、20.03%、19.45%,10 kPa下生长的量子阱的整体光电性能最好。