电极形状对GaN基发光二极管芯片性能的影响

采用Crosslight APSYS这一行业专业软件对p-GaN,InGaN/InGaN多量子阱,n-GaN和蓝宝石的芯片结构研究了不同电极形状与器件的光电性能之间的关系.优化设计了普通指形电极、对称型指形电极、h形指形电极、旋转形电极、中心环绕形电极、树形电极等6种电极结构.通过电极优化设计,电流分布更加均匀,减小了电流的聚集效应.优化后的电极结构结果表明:芯片的电特性得到了提高,芯片的光特性得到了明显改善,芯片的出光效率大幅度提高,芯片的转化效率得到了提升.     

使用AlN/GaN超晶格势垒层生长高Al组分AlGaN/GaN HEMT结构

在蓝宝石衬底上生长了以AlN/GaN超晶格准AlGaN合金作为势垒的HEMT结构材料,并与传统AlGaN合金势垒样品进行了对比.在高Al组分(≥40%)情况下,超晶格势垒样品的表面形貌明显改进,电学性能特别是2DEG面电子浓度也有所改进.对超晶格势垒生长参数进行了初步优化,使得HEMT结构薄层电阻进一步降低,最后获得了251 Ω/□的薄层电阻. 关键词： AlGaN/GaN 结构 AlN/GaN超晶格 二维电子气 高电子迁移率晶体管     

p型GaN低温粗化提高发光二极管特性

利用金属有机物化学气相沉积技术在蓝宝石衬底上低温生长GaN:Mg薄膜,对不同源流量的GaN:Mg材料特性进行优化研究.研究表明二茂镁(CP2Mg)和三甲基镓(TMGa)物质的量比([CP2Mg]/[TMGa])在1.4×10-3—2.5×10-3范围内,随[CP2Mg]/[TMGa]增加,晶体质量提高,空穴浓度线性增加.当[CP2Mg]/[TMGa]为2.5×10-3时获得空穴浓度与在较高温度生长获得的空穴浓度相当,且薄膜表面较粗糙.采用[CP2Mg]/[TMGa]为2.5×10-3的p型GaN层制备的发光二极管,在注入电流为20mA时,输出光强提高了17.2%.     

闪锌矿Ga_(1-x)Al_xN电子结构和光吸收的第一性原理

采用基于密度泛函理论的第一性原理平面波超软赝势法,计算了不同浓度Al(x=0,0.125,0.250,0.375,0.500)掺杂闪锌矿GaN体系的电子结构和光学吸收谱。结果表明:Al掺杂导致系统的晶格常数减小,禁带宽度增大,吸收谱蓝移,可以达到日盲区紫外线探测器的要求。     

纤锌矿型量子级联激光器的界面与受限声子比较(英文)

利用传输矩阵方法对纤锌矿型量子级联激光器有源区的界面与受限声子进行了研究.计算结果显示:在纵光学频域有一组界面声子与二组受限声子存在,而且最低频率的两个界面声子在一定条件下能转变为受限模式.通过比较界面声子与受限声子的色散及声子势发现两者有很大不同,且计算电声散射速率可以发现由这两种声子引起的散射率是可比拟的.     

Simulation of growing GaN in vertical HVPE reactor

The paper reports the setting up of a model of fluid dynamic for GaN HVPE system and the simulation. It is found that when the direction of gravity is opposite to the direction of GaCl flow inlet,there exits a distance at which the uniformity of the deposition is optimal. Here the good uniformity of the deposition is obtained when the distance between the substrate and GaCl inlet is 5 cm. The parameters of gas flow used in growing GaN are also optimized. In addition, the influence of gravity and buoyancy on...     

Effect of high temperature band gap of GaN annealing on strain and nanoparticles

<正>Black-coloured GaN nanoparticles with an average grain size of 50 nm have been obtained by annealing GaN nanoparticles under flowing nitrogen at 1200℃for 30 min.XRD measurement result indicates an increase in the lattice parameter of the GaN nanoparticles annealed at 1200℃,and HRTEM image shows that the increase cannot be ascribed to other ions in the interstitial positions.If the as-synthesised GaN nanoparticles at 950℃are regarded as standard,the thermal expansion changes nonlinearly with temperature and is anisotropic;the expansion below 1000℃is smaller than that above 1000℃.This study provides an experimental demonstration for selecting the proper annealing temperature of GaN.In addition,a large blueshift in optical bandgap of the annealed GaN nanoparticles at 1200℃is observed,which can be ascribed to the dominant transitions from the C（Γ₇） with the peak energy at 3.532 eV.     

Effects of SiNx on two-dimensional electron gas and current collapse of A1GaN/GaN high electron mobility transistors

SiNx is commonly used as a passivation material for AlGaN/GaN high electron mobility transistors (HEMTs). In this paper, the effects of SiN x passivation film on both two-dimensional electron gas characteristics and current collapse of AlGaN/GaN HEMTs are investigated. The SiNx films are deposited by high- and low-frequency plasma-enhanced chemical vapour deposition, and they display different strains on the AlGaN/GaN heterostructure, which can explain the experiment results.     

Effects of Ⅴ/Ⅲ ratio on species diffusion anisotropy inthe MOCVD growth of non-polar a-plane GaN films

Non-polar a-plane (110) GaN films have been grown on r-plane (102) sapphire substrates by metal organic chemical vapour deposition. The influences of Ⅴ/Ⅲ ratio on the species diffusion anisotropy of a-plane GaN films were investigated by scanning electron microscopy, cathodoluminescence and high-resolution x-ray diffraction measurements. The anisotropy of a-plane GaN films may result from the different migration length of adatoms along two in-plane directions. Ⅴ/Ⅲ ratio has an effect on the growth rates of different facets and crystal quality. The stripe feature morphology was obviously observed in the film with a high V/III ratio because of the slow growth rate along the [100] direction. When the Ⅴ/Ⅲ ratio increased from 1000 to 6000, the in-plane crystal quality anisotropy was decreased due to the weakened predominance in migration length of gallium adatoms.     

Simulation of current spreading for GaN-based light-emitting diodes

Uniform current spreading is crucial for the performance of light-emitting diodes (LEDs). It has been reported that the reliability and light distribution are affected by non-uniform current spreading. In this paper, the impact of different electrode patterns on the performance of LED chips is investigated. A hybrid modeling method is employed to analyze the electrical and thermal characteristics of LEDs with two different electrode mesa structures. Corresponding experiments are also carried out to validate the calculation results. It is found that increasing amount of p-electrodes in interdigitated electrode patterns is effective in improving the performance of LEDs.