全文获取类型
收费全文 | 563篇 |
免费 | 576篇 |
国内免费 | 36篇 |
专业分类
化学 | 66篇 |
晶体学 | 82篇 |
力学 | 3篇 |
综合类 | 5篇 |
数学 | 7篇 |
物理学 | 1012篇 |
出版年
2024年 | 4篇 |
2023年 | 7篇 |
2022年 | 26篇 |
2021年 | 23篇 |
2020年 | 15篇 |
2019年 | 14篇 |
2018年 | 24篇 |
2017年 | 42篇 |
2016年 | 56篇 |
2015年 | 37篇 |
2014年 | 84篇 |
2013年 | 96篇 |
2012年 | 94篇 |
2011年 | 118篇 |
2010年 | 81篇 |
2009年 | 65篇 |
2008年 | 57篇 |
2007年 | 56篇 |
2006年 | 76篇 |
2005年 | 49篇 |
2004年 | 41篇 |
2003年 | 26篇 |
2002年 | 29篇 |
2001年 | 22篇 |
2000年 | 15篇 |
1999年 | 10篇 |
1998年 | 2篇 |
1997年 | 4篇 |
1995年 | 2篇 |
排序方式: 共有1175条查询结果,搜索用时 15 毫秒
81.
Both the electrical and optical properties are studied of the GaN:Si films with carrier concentrations ranging from 10^17cm^-3 to 10^19cm^-3.rhe results indicate that the increase in slope of carrier concentration starts to slow down when the flow rate of SiH4 is larger than 6.38μmol/min, which is attributed to the amphoteric character of Si. At the same time, the photoluminescence results show that the FWHM of UV is widened,which can be interpreted quantitatively with a semi-classic model. Furthermore, the intensity ratio between the yellow and the UV luminescences reduces monotonically with Si dopants increasing. 相似文献
82.
报道了纤锌矿WZ(wurtzite)GaN(0001)表面的电子结构研究.采用全势线性缀加平面波方法计算得到了GaN分波态密度,与以前实验结果一致.讨论了Ga3d对GaN电子结构的影响.利用同步辐射角分辨光电子能谱技术研究了价带电子结构.通过改变光子能量的垂直出射谱勾画沿ΓA方向的体能带结构,与计算得到的能带结构符合得较好.根据沿ΓK和ΓM方向的非垂直出射谱,确定了两个表面态的能带色散
关键词:
GaN
角分辨光电发射
全势线性缀加平面波
电子结构 相似文献
83.
利用同步辐射光电子能谱研究了低覆盖度Au在GaN(0001)表面的初始生长模式,肖特基势垒高 度以及界面的电子结构.结果表明,Au沉积初始阶段有界面的化学反应,随后呈三维岛状生长 .由光电子能谱实验确定的肖特基势垒高度为14 eV. 通过对界面价带谱和Au 4f芯能级谱 的分析,确定了界面化学反应的存在.利用线性缀加平面波方法计算了GaN(0001)和Au的价带 态密度并分析了化学反应产生的机理,认为在初始阶段界面形成了Au_Ga合金.
关键词:
同步辐射
光电子能谱
Au/GaN欧姆接触
态密度 相似文献
84.
Equilibrium calculations of Si-doping in GaN are investigated using the Gemini code. The method of the calculation is based on the minimisation of the Gibbs free energy. Experimental growth conditions are used for the calculation. The variables are the amount of the dopant and the temperature. The results show the formation of a solid Si3N4 compound with a certain quantity of the input SiH4, that is the silicon precursor in our MOVPE system. Si3N4 formation can explain the limitation of Si incorporation and the surface roughening as revealed by MOVPE Si doped layers. 相似文献
85.
Lateral Schottky ultraviolet detectors were fabricated in GaN using indium-tin-oxynitride (ITON) as a contact metal. The GaN semiconductor material was grown on 2 in. sapphire substrate by metal-organic chemical vapor deposition (MOCVD). The Schottky contact has been realized using ITON that has been deposited using sputter techniques. I-V characteristics have been measured with and without UV illumination. The device shows photo-to-dark current ratios of 103 at −1 V bias. The spectral responsivity of the UV detectors has been determined. The high spectral responsivity of more than 30 A/W at 240 nm is explained by a high internal gain caused by generation-recombination centers at the ITON/GaN interface. Persistent photocurrent effect has been observed in UV light (on-off) switching operation, time constant and electron capture coefficient of the transition has been determined. 相似文献
86.
87.
88.
采用金属有机物化学气相沉积(MOCVD)和离子注入的方法制备了掺铕GaN薄膜。利用Raman散射技术研究薄膜的晶格振动,从而确定离子注入引进的晶格损伤变化情况。结果表明,Eu离子注入剂量越大,对晶格的损伤越严重;Eu离子注入的能量越高,对晶格的损伤也越严重;采用沟道注入方法可以有效地减小对晶体的损伤。离子注入后进行高温退火,可以使晶格中的Ga空位引起的缺陷得到有效的恢复。而N空位引起的缺陷随着退火温度的升高先减少后增多。不同几何配置的Raman谱研究表明,1000℃的高温退火导致了GaN的分解。 相似文献
89.
90.
The structures of Ga_3N, GaN_3, Ga_3N_2 and Ga_2N_3 clusters are studied using the full-potential linear-muffin-tin-orbital molecular dynamics (FP-LMTO MD) method. Four structures for Ga_3 N, five structures for GaN_3, nine structures for Ga_3N_2 and nine structures for Ga_2N_3 have been obtained. The most stable structures of these clusters are planar ones. A strong dominance of the N--N bond over the Ga--N and Ga--Ga bonds appears to control the structural skeletons, supporting the previous result obtained by Kandalam and co-workers. The most stable structures of these small GaN clusters displayed semiconductor-like properties through the calculation of the HOMO-LUMO gaps. 相似文献