Simple theoretical analysis of the thermoelectric power in quantum dot superlattices of non-parabolic heavily doped semiconductors with graded interfaces under strong magnetic field

We study theoretically the thermoelectric power in the presence of a large magnetic field (TPM) in heavily doped III–V, II–VI, PbTe/PbSnTe, strained layer and HgTe/CdTe quantum dot superlattices (QDSLs) with graded structures on the basis of newly formulated electron energy spectra and compare the same with that of the constituent materials. It has been found, taking heavily doped GaAs/Ga_1−xAl_xAs, CdS/CdTe, PbTe/PbSnTe, InAs/GaSb and HgTe/CdTe QDSLs as examples, that the TPM increases with increasing inverse electron concentration and film thickness, respectively, in different oscillatory manners and the nature of oscillations is totally band structure dependent. We have also suggested the experimental methods of determining the Einstein relation for the diffusivity–mobility ratio, the Debye screening length and the electronic contribution to the elastic constants for materials having arbitrary dispersion laws.     

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利用组态软件编程设计监控界面,监控节点通过与现场总线控制器及高压监控节点的通信,实现对极向场电源状态的实时、可靠监控,并经ODBC接口将状态数据发送至数据库节点备份。简述了电源监控系统的构成,及通过不同的通信协议实现实时数据传输和处理的过程。     

Perylene diimide copolymers with dithienothiophene and dithienopyrrole: Use in n‐channel and ambipolar field‐effect transistors

Solution‐processable polymers consisting of perylene diimide (PDI) acceptor moieties alternating with dithienothiophene (DTT), N‐dodecyl‐dithienopyrrole (DTP), or oligomers of these donor groups have been synthesized. We have, in addition to varying the donor, varied the N,N′ substituents of the PDIs. The thermal, optical, electrochemical, and charge‐transport properties of the polymers have been investigated. The polymers show broad absorption extending from 300 to 1000 nm with optical band gaps as low as 1.2 eV; the band gap decreases with increasing the conjugation length of donor block, or by replacement of DTT by DTP. The electron affinities of the polymers, estimated from electrochemical data, range from ?3.87 to ?4.01 eV and are slightly affected by the specific choice of donor moiety, while the estimated ionization potentials (?5.31 to ?5.92 eV) are more sensitive to the choice of donor. Bottom‐gate top‐contact organic field‐effect transistors based on the polymers generally exhibit n‐channel behavior with electron mobilities as high as 1.7 × 10^–2 cm²/V/s and on/off ratios as high as 10⁶; one PDI‐DTP polymer is an ambipolar transport material with electron mobility of 4 × 10^–4 cm²/V/s and hole mobility of 4 × 10^–5 cm²/V/s in air. There is considerable variation in the charge transport properties of the polymers with the chemical structures. © 2013 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2013     

Infrared spectroscopic studies of transition metal complexes and polarizability effect

The literature data on substituent influence on the CS, CN, NC, NN, and NO stretching frequencies (ν) in the IR spectra and in specific cases on their respective stretching force constants (k) have been analyzed for 28 series of the transition metal complexes. The ν and k values were first established to depend not only on the inductive and resonance effects but on the polarizability of substituents as well. The contribution of the polarizability effect varies from 0 to 57% with the type of series.     

Block copolymer containing poly(3‐hexylthiophene) and poly(4‐vinylpyridine): Synthesis and its interaction with CdSe quantum dots for hybrid organic applications

Poly(3‐hexylthiophene)‐b‐poly(4‐vinylpyridine) diblock copolymer was synthesized by RAFT polymerization of 4‐vinyl pyridine using a trithiocarbonate‐terminated poly(3‐hexylthiophene) macro‐RAFT agent. The optoelectronic properties and the morphology of the block copolymer blends with CdSe quantum dots were investigated. UV‐vis and fluorescence experiments were performed to prove the charge transfer between CdSe and poly(3‐hexylthiophene)‐b‐poly(4‐vinylpyridine) diblock copolymer. © 2011 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2011     

Enhancement of OFET performance of semiconducting polymers containing benzodithiophene upon surface treatment with organic silanes

Poly{4,8‐bis(4‐decylphenylethynyl)benzo[1,2‐b:4,5‐b′]dithiophene} ( P1 ) homopolymer and poly{4,8‐bis(4‐decylphenylethynyl)benzo[1,2‐b:4,5‐b′]dithiophene ‐alt‐thiophene} ( P2 ) alternating copolymer have been synthesized by Stille coupling polymerization. The field‐effect mobilities of both polymers were measured on both untreated and silane‐treated OFET devices. Various silanes were selected to allow an incremental increase in the hydrophobicity of the silicon dioxide dielectric. A direct correlation was observed between the hydrophobicity of the silicon dioxide dielectric surface and the enhancement of the field‐effect mobilities. The highest mobilities for both polymers were measured on the OFET devices treated with heptadecafluoro‐1,1,2,2‐tetrahydro‐decyl‐1‐trimethoxysilane (FS) which generated the most hydrophobic surface. © 2011 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2011     

High speeds complementary integrated circuits fabricated with all‐printed polymeric semiconductors

Inkjet‐printed high speed polymeric complementary circuits are fabricated using an n‐type ([poly{[N,N′‐bis(2‐octyldodecyl)‐naphthalene‐1,4,5,8‐bis(dicarboximide)‐2,6‐diyl]‐alt‐5,5′‐(2,2′‐dithiophene)} [P(NDI2OD‐T2), Polyera ActivInk N2200] and two p‐type polymers [poly(3‐hexylthiophene) (P3HT) and a dithiophene‐based polymer (Polyera ActivInk P2100)]. The top‐gate/bottom‐contact (TG/BC) organic field‐effect transistors (OFETs) exhibit well‐balanced and very‐high hole and electron mobilities (μ_FET) of 0.2–0.5 cm²/Vs, which were enabled by optimization of the inkjet‐printed active features, small contact resistance both of electron and hole injections, and effective control over gate dielectrics and its orthogonal solvent effect (selection of poly(methyl methacrylate) and 2‐ethoxyethanol). Our first demonstrated inkjet‐printed polymeric complementary devices have been integrated to high‐performance complementary inverters (gain >30) and ring oscillators (oscillation frequency ～50 kHz). We believe that the operating frequency of printable organic circuits can be further improved more than 10 MHz by fine‐tuning of the device architecture and optimization of the p‐ and n‐channel semiconductor processing. © 2010 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys, 2010     

ForceFit: A code to fit classical force fields to quantum mechanical potential energy surfaces

The ForceFit program package has been developed for fitting classical force field parameters based upon a force matching algorithm to quantum mechanical gradients of configurations that span the potential energy surface of the system. The program, which runs under UNIX and is written in C++, is an easy‐to‐use, nonproprietary platform that enables gradient fitting of a wide variety of functional force field forms to quantum mechanical information obtained from an array of common electronic structure codes. All aspects of the fitting process are run from a graphical user interface, from the parsing of quantum mechanical data, assembling of a potential energy surface database, setting the force field, and variables to be optimized, choosing a molecular mechanics code for comparison to the reference data, and finally, the initiation of a least squares minimization algorithm. Furthermore, the code is based on a modular templated code design that enables the facile addition of new functionality to the program. © 2010 Wiley Periodicals, Inc. J Comput Chem, 2010     

二次域Q（√7）的单位给出的三角数及相关的不定方程问题

研究了二次域Q（√7）中单位Vn＋Un√7）=（8＋3√7）n所给出的两个递归数列{Vn},{Un}中的三角数问题,找到了{Vn},{Un}中的所有的三角数.作为应用,给出了与其相关的两个不定方程的整数解.     

体上二次矩阵方程的解

本文得到了体上二次矩阵方程XAY= B有解的充要条件.并给出了当r(A)= r(B)时矩阵方程XAY= B的通解.