Dirac particle in a plane wave field and the semi‐classical approximation

In this paper we investigate the influence of photon represented by plane wave field on Dirac particle in the context of path integral approach given by Fradkin and Gitman formalism. In our case, although the action relative to Dirac particle in plane wave field seems to be non quadratic, the result obtained by semi‐classical approach is the same as that found by an exact calculation. Hence; when we add the plane wave field to any quadratic actions related to Fradkin and Gitman approach, the total action behaves like quadratic.     

沿直线分布电荷体系电场线的解析解

通过求解电场线所满足的微分方程,得到了沿直线分布电荷体系电场线的严格解析解,根据所得电场线簇方程,讨论了各种沿直线分布电荷体系的电场线特点,并在计算机上利用Mathematica软件绘出了相应的电场线分布图.     

大学物理实验的简化与深化

以复摆实验、地磁实验和衍射光栅实验为例,说明在大学物理实验中,通过提供简单的实验器材,就可以将实验内容延伸扩展,将原来内容单一的实验扩展为多层次、多目的的实验项目,实现大学物理实验的简化与深化.     

高斯光束在外加空间调制电场的光折变晶体中的演化

研究了高斯光束在外加空间调制电场的光折变晶体中的演化,结果表明,在不同的外加调制电场作用下高斯光束的光场分布会随着外电场变化而被调制。重点研究了同相位和反相位以及相位差为π/2的高斯光束在外加空间调制电场的光折变晶体中的相互作用,在外加空间分布线性增加电场作用下出现了许多新的实用特性,通过调整外加电场分布,可以让两同相位相干光靠得更近而不发生融合,也可以让两靠得很近的反相位光束可控偏转,还可以控制相位差为π/2的两相干光束进行能量转移。这种连续变化的电场可以用阶梯分布的电场替代,为工程实现提供了可能。     

Frequency-modulated excitation of Rydberg potassium atoms by using B-spline

By using the B-spline expansion technique and a model potential of the alkali atoms, the properties of frequency- modulated excitation of Rydberg potassium atoms in a static electric field and a microwave field are investigated by using the time-dependent two-level approach. We successfully reproduce the square wave oscillations in the low frequency, the stair step population oscillations in the intermediate frequency, and the multiphoton transitions in the high frequency with respect to the unmodulated Rabi frequency, which have been observed experimentally by Noel et al. [Phys. Rev. A 58 2265 (1998)]. Furthermore, we also numerically obtain the discretized Rabi oscillations predicted in the Landau-Zener accumulation model.     

Effects of a carbon convection field on large diamond growth under high-pressure high-temperature conditions

Large diamond crystals were successfully synthesized by a FeNi-C system using the temperature gradient method under high-pressure high-temperature conditions. The assembly of the growth cell was improved and the growth process of diamond was investigated. Effects of the symmetry of the carbon convection field around the growing diamond crystal were investigated systematically by adjusting the position of the seed crystal in the melted catalyst/solvent. The results indicate that the morphologies and metal inclusion distributions of the synthetic diamond crystals vary obviously in both symmetric and non-symmetric carbon convection fields with temperature. Moreover, the finite element method was applied to analyze the carbon convection mode of the melted catalyst/solvent around the diamond crystal. This work is helpful for understanding the growth mechanism of diamond.     

振动波包法模拟氢溴酸光解离动力学

研究了在零度和非零度时的双原子分子离子HBr⁺在不同包络函数的超快激光脉冲作用下的光解离动力学. 主要计算了HBr⁺电子基态时的参数. 利用从头算理论在CCSD/6-311++G(3df,2pd)水平计算了HBr+的势能值,用Morse参数模拟后,与非依时傅立叶格点哈密顿方法获得的束缚态振动能量本征值进行比较. 另外,探索了温度、脉冲包络函数和光强度对光解离过程的影响.     

Breakdown voltage analysis of Al_0.25Ga_0.75N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer

In this paper,two-dimensional electron gas(2DEG) regions in AlGaN/GaN high electron mobility transistors(HEMTs) are realized by doping partial silicon into the AlGaN layer for the first time.A new electric field peak is introduced along the interface between the AlGaN and GaN buffer by the electric field modulation effect due to partial silicon positive charge.The high electric field near the gate for the complete silicon doping structure is effectively decreased,which makes the surface electric field uniform.The high electric field peak near the drain results from the potential difference between the surface and the depletion regions.Simulated breakdown curves that are the same as the test results are obtained for the first time by introducing an acceptor-like trap into the N-type GaN buffer.The proposed structure with partial silicon doping is better than the structure with complete silicon doping and conventional structures with the electric field plate near the drain.The breakdown voltage is improved from 296 V for the conventional structure to 400 V for the proposed one resulting from the uniform surface electric field.     

Integrability and ergodicity of classical billiards in a magnetic field

We consider classical billiards in plane, connected, but not necessarily bounded domains. The charged billiard ball is immersed in a homogeneous, stationary magnetic field perpendicular to the plane. The part of dynamics which is not trivially integrable can be described by a bouncing map. We compute a general expression for the Jacobian matrix of this map, which allows us to determine stability and bifurcation values of specific periodic orbits. In some cases, the bouncing map is a twist map and admits a generating function. We give a general form for this function which is useful to do perturbative calculations and to classify periodic orbits. We prove that billiards in convex domains with sufficiently smooth boundaries possess invariant tori corresponding to skipping trajectories. Moreover, in strong field we construct adiabatic invariants over exponentially large times. To some extent, these results remain true for a class of nonconvex billiards. On the other hand, we present evidence that the billiard in a square is ergodic for some large enough values of the magnetic field. A numerical study reveals that the scattering on two circles is essentially chaotic.