张力对斜拉桥拉索镀锌钢绞线腐蚀行为影响

应用伏安极化法和中性盐雾腐蚀试验研究了张力作用下斜拉桥拉索镀锌钢绞线在5%NaC l溶液中腐蚀行为.腐蚀产物理化性质由XRD、TG-DTA等测试表征.结果表明,镀锌钢绞线的腐蚀电流,即腐蚀速率随试验前施加的张力增加而增大,其产生白锈的盐雾试验周期小于1,经15~22 kN张力作用后的镀锌钢绞线,产生红锈的盐雾试验周期为16,而经0、10 kN张力作用的钢绞线,产生红锈的周期则延长至23,钢绞线腐蚀产物主要是Zn5C l2(OH)8.H2O、Zn4(CO3)(OH)6.H2O和ZnO.     

CoFeSiB非晶丝弱磁场测量仪的研制

设计了以Co基非晶丝为敏感元件的传感器探头,多谐振荡励磁电路,信号处理电路,单片机显示电路,且对该磁场测量仪进行了标定。     

L波段高功率线极化径向线阵列天线理论分析与数值模拟

 探索了L波段的高功率线极化径向线阵列天线。基于三角形栅格形式实现了径向线圆形平面阵列天线,分析并给出了径向线并联馈电网络,并以同轴馈电的水平单圆环线极化天线为基础,利用径向线并联馈电网络设计出了间距小于一个波长下L波段高功率线极化径向线阵列天线。研究结果表明：这种结构实现径向线阵列天线的线极化辐射是可行的,该天线在中心频率1.57 GHz下,增益为19.97 dBi,轴比为-52.06 dB,反射系数为0.105 2;在1.37～1.77 GHz的频率范围内增益大于18.64 dBi,轴向轴比值小于-46.45 dB。     

丝电爆过程的电流导入机理

丝电爆制备纳米粉时, 电流从电极导入金属丝的过程直接影响电极烧损和粉末中微米级大颗粒产生. 分别通过接触和气体放电两种方式导入电流进行电爆试验. 结果表明, 光测量装置检测到的丝端部光电流几乎与回路放电电流同时产生, 而中间位置的光电流则要滞后一段时间; 由探针收集的产物确定, 金属丝端部主要形成熔融粒子, 中间部分主要形成气相粒子. 分析可知, 接触方式导入电流时, 丝端部也存在气体放电现象, 大电流主要通过气体放电形成的等离子体导入. 等离子体对电流的旁路作用会阻碍能量向金属丝沉积, 这是产生微米级大颗粒和"积瘤"主要原因. 通过气体放电方式导入电流时, 电极烧损明显减轻, 并可以避免"积瘤"产生.     

铝-钨丝混编阵的Z-箍缩实验研究

利用铝丝和钨丝混合编制的丝阵作为Z箍缩的负载，在俄罗斯Kurchatov研究所的S300强流装置上对其Z箍缩过程进行了实验研究，并与纯铝丝阵和纯钨丝阵的实验结果进行了比较.不同材料组成的丝阵的Z箍缩x射线能谱之间有明显差异，混编丝阵的铝K壳层的x射线辐射强度比纯铝丝阵的弱，在纯钨丝阵Z箍缩中没有发现波长小于1.6nm的线辐射.混编丝阵Z箍缩的x射线发光区域比纯铝丝阵的小，但比纯钨丝阵的大,混编丝阵的x射线产额比纯铝丝阵的大，但比纯钨丝阵的略低.在驱动电流为2.5—2.8MA条件下，Z箍缩的径向收缩比为4—5，x射线辐射脉冲脉宽为25ns左右，峰值为0.3—0.5TW，总能量为10—20kJ.激光探针的阴影像显示了丝阵等离子体形成的细致过程，还表明了等离子体的边界面不够清晰，其不稳定性有明显的发展，内部有丰富的结构. 关键词： Z箍缩 混编丝阵 S300强流装置     

Load optimal design for a primary test stand facility based on a zero-dimensional load model

In order to couple the numerical simulation of a primary test stand driver with an optimal load design, a zero-dimensional wire array load model is designed based on the Saturn load model using PSPICE, which is an upgraded version of the Simulation Program with Integrated Circuit Emphasis (SPICE) designed by the ORCAD Corporation to perform circuit simulations. This paper calculates different load parameters and discusses factors influencing the driving current curve. With appropriate driving current curves chosen, further magneto-hydrodynamic calculations are carried out and discussed to provide the best results for experiments. The suggested optimal load parameters play an important role in experimental load design.     

Wire metamaterial based on semiconductor matrices

In this Letter, we have presented a new approach for the fabrication of nanowire media (wire metamaterials) by electrochemical methods. A^IIIB^V porous matrices (a host medium) were prepared by anodic electrochemical etching of industrial substrates. The host medium has been filled via electrochemical deposition with a metal and by means of annealing process. We have shown that this technique can be used to fabricate a nanowire medium with unique parameters (such as aspect ratio, high electric permittivity and strong χ⁽³⁾ nonlinearity near the fundamental absorption edge of the host media). (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

A peculiarity of diffraction measurements using a Gaussian laser beam

Numerical modelling of the Gaussian beam diffraction by a wire near the Fraunhofer limit is presented. Two cases are considered: the case of the wire being on the axis of the beam and the case of the wire being off-axis. For the case where the wire is on the axis, the displacements of the diffracted minima are calculated. For the off-axis case, the changes in the positions of the maxima and minima and the power density are calculated. The conditions are determined at which the measurements made using a Gaussian beam can be calculated using the formula for plane waves. This work arises in connection with research being performed into the Doppler spectrum of big particles.     

金属丝的杨氏模量测定实验的改进

对金属丝杨氏模量测定仪重新设计.将金属丝水平放置,在中点处悬挂重物,通过测量金属丝伸长后的转角,进而测量金属丝的杨氏模量.     

Polaronic shift of the Wannier-Mott exciton binding energy in a quantum wire with allowance for the phonon confinement effect

Within the framework of the Li-Low-Pines model the interaction of a Wannier-Mott exciton with polar optical phonons in a cylindrical semiconductor wire is studied, taking into account the phonon confinement effect. An analytical expression for the exciton binding energy with allowance for the polaronic effect is obtained. Numerical calculations of the binding energy are carried out for AlAs/GaAs/AlAs and ZnSe/CdSe/ZnSe wires with a various degree of polarity of quantum wire materials. The polaronic shift of the binding energy of light and heavy hole excitons is calculated.