四孔径衍射屏在近场形成的光强分布及拓扑荷

利用基尔霍夫衍射理论计算模拟了四圆孔径衍射屏在菲涅耳深区形成的衍射光场的强度、零值线和相位的分布,发现衍射光场亮斑关于中心呈对称分布,在距离衍射屏较近的观察面上,光强值为零的点组成光强零值线段,该线段上光强等值线的离心率都接近或等于1,其两侧的光强值变化非常剧烈。复振幅的实部和虚部零值线多为封闭的曲线,零值线交叉点的个数为偶数,并且正负相位奇异点的个数相等。特殊相位奇异点周围的相位不仅呈对称分布,而且该点的拓扑荷的值近似为零。随着光波的传播,在不同的观察面上光强零值线段逐渐变短,最终趋于一点。     

大气湍流光学参数分析

利用两种不同大气湍流结构常数模型,讨论了不同高度的湍流对大气湍流光学参数的影响。通过理论计算得出:相干长度和对数振幅起伏方差主要由低层大气湍流决定,而等晕角、倾斜等晕角、格林伍德频率和泰勒频率由对流层顶附近的高层湍流决定。分析了垂直高度30 km以下的3部分大气湍流对等晕角的贡献比例,在给定的不同强度湍流下,对流层顶附近的高层大气湍流贡献比例都大于25％,而低层大气湍流的贡献比例都小于3%。     

高斯光束经圆形光阑衍射的远场发散特性

线偏振高斯光束经圆形光阑衍射后,其远场可表示成互相正交的横电(TE)项和横磁(TM)项之和。利用TE项和TM项的远场能流分布,导出了高斯衍射光束的TE项和TM项远场功率的解析表达式,由此可度量TE项和TM项在远场占总功率的比例。基于能流二阶矩的定义,给出了高斯衍射光束、TE项和TM项远场发散角的解析式以及三者远场发散角间的关系通式,重点分析了f参数和截取参数对远场发散角的影响。结果表明:随着f参数的增大,远场发散角先增大后趋向于各自的饱和值。截取参数对远场发散角的影响与f参数相关,当f参数较大时,截取参数对远场发散角的影响不明显;当f参数适中时,随着截取参数的增大,远场发散角先减小后趋向于各自的最小值;但当f参数较小时,高斯衍射光束和TM项二者的远场发散角出现一定的波动性。     

Electrical behavior of high resistivity Ce-doped BiFeO3 multiferroic

Bi_1+xCe_xFeO₃ (Ce–BFO) for x=0, 0.05, 0.1, and 0.15 monophasic ceramic samples were successfully synthesized by conventional solid-state reaction routes. The influences of Ce doping on structural, dielectric, ferroelectric, leakage current and capacitive properties of BiFeO₃ ceramics were investigated intensively. At higher concentrations of x (x=0.1 and 0.15) the samples showed good crystallinity with almost impurity free phases. No structural phase transformation took place after partial doping of Ce ions and all ceramic bulk samples remain in their rhombohedral structure with space group R3c. The dielectric behavior of the samples improved significantly and the ferroelectric hysteresis loops changed their shape from rounded to a strongly nonlinear typical ferroelectric feature mainly originating from the domain switching and became enhanced with increase in doping concentration of cerium (Ce). Experimental results also suggested that partial doping of higher valence, smaller ionic radius Ce ions in BiFeO₃ forces the reduction of oxygen vacancies, resulting in a great suppression of leakage current. It is found that the sharp capacitance peak/discontinuity present in the C–V characteristics of Ce–BFO for different Ce doping concentrations is directly associated with the polarization reversal. Incorporation of excess bismuth in the presence of Ce in BiFeO₃ is expected to compensate Bi loss during high temperature sintering and caused structural distortion which also favors enhancement of ferroelectric properties in Ce-doped BFO.     

Particle Size Characterization of an Extra Fine Milled Product

The present research aims to characterize the particle size distribution of sub micron particles suspended in a liquid. The particles milled are an organic poorly water soluble crystalline product. To characterize the size of these particles, different techniques have been tested: imaging techniques (SEM, CryoTEM), static light scattering techniques, dynamic light scattering techniques, centrifugation and flow field flow fractionation. The results indicate that the studied milled particles have a primary particle size close to 180nm and there is strong evidence of larger particles which are very likely aggregates. This is clearly seen from the Cryo TEM results. All the above mentioned techniques should in principle be able to measure samples of dispersion containing particles of ca 180 nm but several are disturbed by the presence of large aggregates. It is difficult to estimate the amount of aggregate present, but most of the time one is interested in what the primary particle size distribution is. It is clear that no single piece of equipment is capable of exactly determining the particle size distribution of our samples, but the static light scattering with low shear on mixing does give a good representation of what is seen with the image analysis by cryo TEM.     

Coupling Losses for Resonators with Unequal Apertures for Extended Fresnel Numbers

Coupling losses have been calculated for laser resonators with unequal apertures and extended Fresnel Numbers. This was done using both, diffraction theory and a simple linear model.A close form expression was derived to calculate coupling losses with reasonable accuracies for a limited range of paramters. This should help in the preliminary design of hole coupling laser resonators.     

Sensitivity enhancement in structural measurements by solid state NMR through pulsed spin locking

Free induction decay (FID) signals in solid state NMR measurements performed with magic angle spinning can often be extended in time by factors on the order of 10 by a simple pulsed spin locking technique. The sensitivity of a structural measurement in which the structural information is contained in the dependence of the integrated FID amplitude on a preceding evolution period can therefore be enhanced substantially by pulsed spin locking in the signal detection period. We demonstrate sensitivity enhancements in a variety of solid state NMR techniques that are applicable to selectively isotopically labeled samples, including 13C-15N rotational echo double resonance (REDOR), 13C-13C dipolar recoupling measurements using the constant-time finite-pulse radio-frequency-driven recoupling (fpRFDR-CT) and constant-time double-quantum-filtered dipolar recoupling (CTDQFD) techniques, and torsion angle measurements using the double quantum chemical shift anisotropy (DQCSA) technique. Further, we demonstrate that the structural information in the solid state NMR data is not distorted by pulsed spin locking in the detection period.     

数字化光学元件中黑栅效应的研究

计算机光学元件是纯相位元件,能够产生任意形状的波面分布,但存在着加工工艺过于复杂的缺点。目前出现了用数字化元件实现计算机光学元件的方法,在这些方法中经常要面临黑栅效应的干扰。利用傅里叶光学理论研究了黑栅效应对具体元件的影响程度,找出了影响黑栅效应强弱的因素,并用MATLAB软件进行了模拟。模拟结果表明:减小黑栅的宽度可使光能量向接收屏中央集中,有效降低黑栅效应的干扰。     

The RATIO method for time‐resolved Laue crystallography

A RATIO method for analysis of intensity changes in time‐resolved pump–probe Laue diffraction experiments is described. The method eliminates the need for scaling the data with a wavelength curve representing the spectral distribution of the source and removes the effect of possible anisotropic absorption. It does not require relative scaling of series of frames and removes errors due to all but very short term fluctuations in the synchrotron beam.     

Influence of boron on the initial stages of Si molecular beam epitaxy on Si(1 1 1) studied by reflection high-energy electron diffraction

The influence of boron as a function of coverage on molecular beam epitaxial Si growth on Si(1 1 1) surface was systematically studied by reflection high-energy electron diffraction. At boron coverage above 0.3 monolayer regular oscillations occur with a period typically for two-bilayers, whereas at lower boron coverage a transient behaviour with irregular intensity oscillations was observed in the initial growth stages. This behaviour can be attributed to a superposition of a bilayer and a two-bilayer dominated growth mode. The appearance of these two growth modes is discussed in terms of an initial surface defect-induced nucleation of bilayer-high Si islands and the formation of two-bilayers-high Si islands on top of the van der Waals like boron-covered surface, respectively. We suggest that these surface defects are of intrinsic nature, and their number only depends on the amount of boron at the surface. The oscillations become regular during further Si deposition with a bilayer period, indicating a diminishing influence of the layer/substrate interface on the growth processes.