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11.
Shougo Higashi 《Surface science》2006,600(3):591-597
We have studied the individual adsorption of Mn and Bi, and their coadsorption on Cu(0 0 1) by low-energy electron diffraction (LEED). For Mn, we have determined the c(2 × 2) structure formed at 300 K, whose structure had been determined by several methods. We reconfirmed by a tensor LEED analysis that it is a substitutional structure and that a previously reported large corrugation (0.30 Å) between substitutional Mn and remaining surface Cu atoms coincides perfectly with the present value. In the individual adsorption of Bi, we have found a c(4 × 2) structure, which is formed by cooling below ∼250 K a surface prepared by Bi deposition of ∼0.25 ML coverage at 300 K where streaky half-order LEED spots appear. The c(4 × 2) structure has been determined by the tensor LEED analysis at 130 K and it is a substitutional structure. In the coadsorption, we found a c(6 × 4) structure, which has been determined by the tensor LEED analysis. It is very similar to the previously determined structure of the c(6 × 4) formed by coadsorption of Mg and Bi, and embedded MnBi4 clusters are arranged in the top Cu layer instead of MgBi4. Large lateral displacements of Bi atoms in the c(6 × 4)-(Mn + Bi) suggest that the Mn atoms undergo the size-enhancement caused by their large magnetic moment. 相似文献
12.
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14.
《Chemistry (Weinheim an der Bergstrasse, Germany)》2006,12(9):2399-2399
15.
Ari Sihvola 《Optik》2006,117(7):317-320
A geometric visualization is presented for the Brewster angle for a plane wave reflecting from an interface. The surface is assumed to be isotropic but it is allowed to display both dielectric and magnetic susceptibility, and hence the Brewster (polarizing) angle can attain any value between 0 and 90°, and can exist for both parallel and perpendicular polarizations. The geometric construction (a tetrahedron) is spanned by the basic material parameters of the surface. The Brewster angle appears in one of the faces of the tetrahedron. 相似文献
16.
Diffraction in electron stimulated desorption has revealed a propensity for Cl+ desorption from rest atom vs. adatom areas and unfaulted vs. faulted zones of Cl-terminated Si(1 1 1)-(7 × 7) surfaces. We associate the 15 eV ± 1 eV threshold with ionization of Si-Cl σ-bonding surface states and formation of screened two-hole states with Si 3s character. Similar specificity is observed from A and B reconstructions. This can be due to reduced screening in unfaulted regions and increased hole localization in Si back-bonds within faulted regions. 相似文献
17.
运用层析法、结晶法从狭苞橐吾全草中分离得到艾里莫芬烷型倍半萜8β-hydroxyeremophil-7(11)-ene-12,8α(4β,6α)-diolide化合物,并通过质谱、核磁共振氢谱和碳谱、氢核-氢核相关谱、异核多量子相干谱和异核多键相干谱进行结构鉴定.其单晶经X射线衍射测试表明,其晶体属正交晶系,空间群为P212121,晶胞参数为: a=6.8519(5),b=10.7191(8),c=18.5942(14)A,V=1365.67(18) A3,Z=4,Dc=1.354 mg/m3.F(000)=592,μ=0.101 mm-1 相似文献
18.
Daniel B. Szyld 《Numerical Algorithms》2006,42(3-4):309-323
Given an oblique projector P on a Hilbert space, i.e., an operator satisfying P
2=P, which is neither null nor the identity, it holds that ||P|| = ||I –P||. This useful equality, while not widely-known, has been proven repeatedly in the literature. Many published proofs are reviewed, and simpler ones are presented. 相似文献
19.
Johannes Elschner Rainer Hinder Gunther Schmidt 《Advances in Computational Mathematics》2002,16(2-3):139-156
This paper is devoted to the numerical study of diffraction by periodic structures of plane waves under oblique incidence. For this situation Maxwell's equations can be reduced to a system of two Helmholtz equations in R
2 coupled via quasiperiodic transmission conditions on the piecewise smooth interfaces between different materials. The numerical analysis is based on a strongly elliptic variational formulation of the differential problem in a bounded periodic cell involving nonlocal boundary operators. We obtain existence and uniqueness results for discrete solutions and provide the corresponding error analysis. 相似文献
20.
A.R. Phani M. PassacantandoS. Santucci 《Journal of Physics and Chemistry of Solids》2002,63(3):383-392
Crack free, dense and transparent CdTiO3 thin films have been prepared by sol-gel technique using titanium butoxide and cadmium acetate. The formation of the CdTiO3 phase started from 500°C annealing temperature onwards. The complete orthorhombic structure of CdTiO3 was formed on Silicon (100) substrate at an annealing temperature of 600°C for 5 h. As the annealing temperature increased from 600 to 700°C, we have observed the cadmium silicate phase at the interface of Si and CdTiO3 phase. Structural, morphological and elemental evolution of these CdTiO3 thin films produced by sol-gel synthesis were characterised by grazing incidence X-ray diffraction (GIXRD), tapping mode atomic force microscopy (TMAFM), scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) respectively. 相似文献