Letter: Differential Invariants of the Kerr Vacuum

The norms associated with the gradients of the two non-differential invariants of the Kerr vacuum are examined. Whereas both locally single out the horizons, their global behavior is more interesting. Both reflect the background angular momentum as the volume of space allowing a timelike gradient decreases with increasing angular momentum becoming zero in the degenerate and naked cases. These results extend directly to the Kerr-Newman geometry.     

滤波器对偏振模色散的补偿

根据耦合非线性薛定谔方程 ,本文研究了偏振模色散如何影响各种码型的频谱 ,分析了滑频滤波器和固定滤波器对偏振模色散的补偿作用。研究结果表明 :偏振模色散对不同码型的频谱影响是不一样的 ,对色散管理孤子的频谱影响最大 ,产生新的频率分量也最多 ,而且每个新频率分量都较强 ,比入射频谱展宽许多 ;滑频滤波器和固定滤波器对偏振模色散都具有补偿作用 ,使最大可传输距离成倍增加 ,两种滤波器对偏振模色散的补偿作用相差较小 ;但是对色散管理孤子系统中的偏振模色散补偿效果最佳。     

The polarization property and irradiance distribution of incoherent and coherent Gaussian beam combinations

Based on the beam coherence-polarization (BCP) matrix, the polarization property of coherent and incoherent Gaussian beam combinations is studied in detail. The general expressions for the degree of polarization P of the resulting beam in case of incoherent and coherent combinations are derived. It is shown that P is dependent on the incoherent or coherent combination, propagation distance, separation, azimuth of the polarization plane and numbers of beamlets in general. The irradiance distribution of the resulting beam for the coherent cases depends on the azimuth of the polarization plane of beamlets. However, for the incoherent case it does not.     

Fractional Brownian Heavy Traffic Approximations of Multiclass Feedforward Queueing Networks

We consider multiclass feedforward queueing networks under first in first out and priority service disciplines driven by long-range dependent arrival and service time processes. We show that in critical loading the normalized workload, queue length and sojourn time processes can converge to a multi-dimensional reflected fractional Brownian motion. This weak heavy traffic approximation is deduced from a deterministic pathwise approximation of the network behavior close to constant critical load in terms of the solution of a Skorokhod problem. Since we model the doubly infinite time interval, our results directly cover the stationary case.AMS subject classification: primary 90B15, secondary 60K25, 68M20     

Negative luminescence in semiconductors: a retrospective view

Twenty-five years ago, we introduced the phenomenon of negative luminescence (NL) into semiconductor physics. This paper provides an overview of work conducted to develop this fundamental concept. Initially, we consider the first-principle approach to radiation interaction with basic matter and the major properties of NL. Then we describe the problems of NL direct measurements in homogeneous materials and structures. Finally, we emphasize the use of NL approach in applications involving devices for infrared (IR) wavelength (3–12 μm) high-temperature (300–400 K) optoelectronics. Our subjects will include NL IR emitting diodes, radiative coolers, IR dynamic scene simulators, light up-conversion devices, and the Stealth effect in IR.     

Measurements of Optical Signals and Their Spectra in the Femtosecond Range with Additional Phase Modulation

A solution to the phase problem in optics is considered within the context of the analysis of signals changing in time and of the effect of an object under investigation on the probing radiation. The solution is based on the use of a twin-wave interferometer with phase modulation in one of the channels and a spectrometer. The analysis is concerned, in particular, with signals and processes of ultrashort duration. To shift the frequency in the interferometer channel, an electrooptical crystal of ferroelectric perovskite is used as the modulator. Errors of amplitude and phase structures determined are analyzed.     

A Semiconductor Laser of the Visible Range as an Exciting Source of Raman Scattering

A possibility of application of semiconductor lasers of the visible range as exciting sources for Raman spectroscopy is studied. An experimental set-up for measuring Raman spectra of polycrystalline dielectrics and broad-gap semiconductors excited by a semiconductor laser with a wavelength of 640 nm was created. The conditions under which the spectral width of the lasing line of a semiconductor laser was within 10^-3 cm^-1 in the continuous mode with a power of 10 mW are realized. The characteristics of various types of exciting sources used in Raman spectroscopy are compared. The results of studies of the characteristic Raman spectra excited with a semiconductor laser in polycrystalline sulfur are presented.     

Self-bonding in an amorphous polymer below the glass transition: A T-peel test investigation

Films of amorphous polystyrene (PS) with a weight-average molecular weight (M_w) of 225 × 10³ g/mol were bonded in a T-peel test geometry, and the fracture energy (G) of a PS/PS interface was measured at the ambient temperature as a function of the healing time (t_h) and healing temperature (T_h). G was found to develop with (t_h)^1/2 at T_h = T_g-bulk − 33 °C (where T_g-bulk is the glass-transition temperature of the bulk sample), and log G was found to develop with 1/T_h at T_g-bulk − 43 °C ≤ T_h ≤ T_g-bulk − 23 °C. The smallest measured value of G = 1.4 J/m² was at least one order of magnitude larger than the work of adhesion required to reversibly separate the PS surfaces. These three observations indicated that the development of G at the PS/PS interface in the temperature range investigated (<T_g-bulk) was controlled by the diffusion of chain segments feasible above the glass-transition temperature of the interfacial layer, in agreement with our previous findings for fracture stress development at several polymer/polymer interfaces well below T_g-bulk. Close values of G = 8–9 J/m² were measured for the symmetric interfaces of polydisperse PS [M_w = 225 × 10³, weight-average molecular weight/number-average molecular weight (M_w/M_n) = 3] and monodisperse PS (M_w = 200 × 10³, M_w/M_n = 1.04) after healing at T_h = T_g-bulk − 33 °C for 24 h. This implies that the self-bonding of high-molecular-weight PS at such relatively low temperatures is not governed by polydispersity. © 2004 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 42: 1861–1867, 2004     

Effects of poly[styrene‐b‐(ethylene‐co‐butylene)‐b‐styrene] on the charge distributions of low‐density polyethylene/polystyrene blends

The effect of the triblock copolymer poly[styrene‐b‐(ethylene‐co‐butylene)‐b‐styrene] (SEBS) on the formation of the space charge of immiscible low‐density polyethylene (LDPE)/polystyrene (PS) blends was investigated. Blends of 70/30 (wt %) LDPE/PS were prepared through melt blending in an internal mixer at a blend temperature of 220 °C. The amount of charge that accumulated in the 70% LDPE/30% PS blends decreased when the SEBS content increased up to 10 wt %. For compatibilized and uncompatibilized blends, no significant change in the degree of crystallinity of LDPE in the blends was observed, and so the effect of crystallization on the space charge distribution could be excluded. Morphological observations showed that the addition of SEBS resulted in a domain size reduction of the dispersed PS phase and better interfacial adhesion between the LDPE and PS phases. The location of SEBS at a domain interface enabled charges to migrate from one phase to the other via the domain interface and, therefore, resulted in a significant decrease in the amount of space charge for the LDPE/PS blends with SEBS. © 2004 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 42: 2813–2820, 2004