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We discuss the structure and the interaction of telechelic brushes. We show that the association of functionalized chain ends is capable of giving rise to attractive interactions between telechelic brush-covered surfaces, in contrast to conventional repulsion. Our predictions for the interaction free energy are in agreement with experimental data. Received 12 June 2000 and Received in final form 29 January 2001 相似文献
154.
Grazing Incidence Reflection Fourier Transform Infrared Spectroscopy (GIR-FTIR) has been applied to the determination of the structures of Langmuir-Blodgett (LB) films of iridium monoalkoxystilbazole on aluminised glass. Band assignments, peak positions and relative intensities are given for some characteristic groups. These results indicated that the hydrocarbon chains tend to the orient perpendicular to the film surface. Further, the high relative intensity of Cφ-O asymmetric stretch shows, in a qualitative way, that the transition moment of this vibration is oriented approximately perpendicular to the substrate surface. 相似文献
155.
R. P. Yadav R. K. Pandey A. K. Mittal S. Dwivedi A. C. Pandey 《Surface and interface analysis : SIA》2013,45(11-12):1775-1780
The surface morphologies of CaF2 thin films prepared by electron beam evaporation technique were measured by atomic force microscopy. The films were bombarded by energetic ion beams of different fluences, which modified the surface morphology predominantly via the process of erosion. The dependence of the surface morphology on ion fluence was explored using multifractal analysis. It was found that the roughness of the film first decreased with ion fluence but increased at higher fluences. Copyright © 2013 John Wiley & Sons, Ltd. 相似文献
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SHI Qianqian;WANG Jiang;CHENG Guanghua 《光子学报》2022,51(10):332-350
Vanadium dioxide （VO2） has attracted many attention of researchers since it was discovered in 1959 to have the reversible phase transition from metal to insulator. Before and after the phase transition, its optical, electrical and thermal properties change dramatically. Therefore, vanadium dioxide is widely used in the fields of thermal light control, infrared and optical protection camouflage, ion batteries and chemical sensors. In order to enable domestic researchers to have a more comprehensive and in-depth understanding of this interesting material with broad application prospects, this paper reviews the latest progress of vanadium dioxide film preparation technology in the past five years and its applications in different hot areas.First, we introduce the structure and phase transition mechanism of VO2. When the temperature exceeds 68℃, VO2 will undergo a phase transition from insulator to metal, and its crystal structure will change from monoclinic insulator to rutile metal structure. At the same time, because the crystal structure of vanadium dioxide changes after phase transformation, its corresponding energy band structure also changes. Because the crystal structure and energy band structure of VO2 change suddenly before and after the phase transition, people devote themselves to exploring the physical mechanism of its phase transition. Up to now, there have been many research on the VO2 phase transition mechanism, and also various research methods and devices, but there is no accurate and unified statement. In this paper, we focus on three mainstream explanations of phase transition mechanisms： the first is electron-electron correlation mechanism, i.e. electron correlation driven Mott transition; The second is the electron phonon interaction mechanism, i.e. crystal structure driven Peierls transition. The third is that electron correlation and crystal structure jointly drive VO2 phase transition, and the supporting evidence is summarized. In addition, the phase transition characteristics of vanadium dioxide films are closely related to the preparation technology and process parameters.In the second part of this paper, many new technologies for preparing VO2 thin films, such as high-energy pulsed magnetron sputtering, atomic layer deposition, ink-jet printing, spray pyrolysis and laser direct writing, are introduced in detail, and the advantages and disadvantages of each technology are briefly described. This part provides ideas for researchers on the preparation of materials at the initial stage of experimental design.In performance evaluation, this parameter thermal hysteresis width ΔH reflects the excellent degree of phase transition characteristics of VO2 thin films ΔH will attenuate the phase transition behavior, reduce the working efficiency of the uncooled detector, and also reduce the sensitivity of the near-infrared optical response to temperature, thus reducing ΔH is of great significance for the wide application of VO2 thin films in optoelectronic devices. The third part of this paper focuses on the regulating of the thermal hysteresis width ΔH. Many factors, such as stress, doping and defects, are analyzed. The stress factor is mainly reflected in the selection of substrate materials when preparing films. Different substrates will produce films with different orientations, and different orientations will show different properties. Both doping and oxygen defects change the phase transition properties of the materials by distorting the lattice of the materials in the films.The performance of materials determines the width of their application prospects. VO2 suddenly changes optical, electrical and other properties before and after phase transition, so it is widely used in optoelectronic devices. In recent years, the combination of VO2 thin films and two-dimensional super surface structures is also a hot direction of application. In this paper, we mainly introduce the application of VO2 thin films in the fields of modified smart windows, terahertz modulators, ultrafast optical switches, electrode materials and various sensors. This part can provide inspiration for researchers to explore new applications of VO2 materials.Finally, the problems and prospects faced by the development of VO2 thin films are predicted and evaluated. 1） How to prepare high-purity VO2 thin films. 2） How to reduce the phase transition temperature without reducing the phase transition performance. The solution of these two problems can contribute to the perfect application of VO2 materials in military, laser, and other integrated equipment systems. We sincerely hope that this paper will contribute to the development of new active materials and devices in the field of optoelectronics. 相似文献
159.
《Journal of Saudi Chemical Society》2020,24(12):955-962
Impressment of Cobalt and Nickel based alloys in industries for the last few years attracted many researchers due to its significant features of physical, chemical and magnetic properties. The present work focused the structural, compositional, morphological and magnetic properties of Cobalt Nickel alloy thin film growth by one of the chemical methods. Thin films of Cobalt Nickel have been deposited on various substrates by means of low cost galvanostatic electrodeposition technique. Structural investigation showed that the deposited films have face centred cubic structure with orientation of crystallites along (1 1 1) plane. The structural parameters such as crystallite size, rms microstrain, dislocation density and stacking fault probability are estimated for the deposited films. Morphological features along with film composition showed that the deposited films have smooth surface with stoichiometry. Magnetic properties such as coercivity, remanence, retentivity was estimated and the results are reported. 相似文献
160.
Ning Li Yuyang Li Shengdan Xie Jinming Wu Nianqiao Liu Yuan Yu Qinglian Lin Prof. Yang Liu Prof. Shuang Yang Prof. Gang Lian Prof. Yanjun Fang Prof. Deren Yang Prof. Zhaolai Chen Prof. Xutang Tao 《Angewandte Chemie (International ed. in English)》2023,62(19):e202302435
Perovskite single crystals and polycrystalline films have complementary merits and deficiencies in X-ray detection and imaging. Herein, we report preparation of dense and smooth perovskite microcrystalline films with both merits of single crystals and polycrystalline films through polycrystal-induced growth and hot-pressing treatment (HPT). Utilizing polycrystalline films as seeds, multi-inch-sized microcrystalline films can be in situ grown on diverse substrates with maximum grain size reaching 100 μm, which endows the microcrystalline films with comparable carrier mobility-lifetime (μτ) product as single crystals. As a result, self-powered X-ray detectors with impressive sensitivity of 6.1×104 μC Gyair−1 cm−2 and low detection limit of 1.5 nGyair s−1 are achieved, leading to high-contrast X-ray imaging at an ultra-low dose rate of 67 nGyair s−1. Combining with the fast response speed (186 μs), this work may contribute to the development of perovskite-based low-dose X-ray imaging. 相似文献