On Solving Three-Dimensional Electrostatic Field Distribution by Multigrid Method

A highly efficient numerical algorithm using the multigrid method (MGM) is introduced to solve a three-dimensional (3-D)field distribution. Taking advantage of the restriction and prolongation in MGM computation, a more accurate field distribution can be acquired rapidly. According to the MGM algorithm, a 3-D program is accomplished, which can solve the field distributions in electron optical systems for various electrostatic lenses. The 3-D field distribution in an electrostatic concentric spherical model is tested with the MGM algorithm and with an algorithm based on the finite difference method (FDM). Comparing these two results in terms of computational efficiency and computational accuracy, it appears that MGM is superior to FDM, which is now used the most in field computations. This paper shows that the 3-D field computation using MGM greatly improves the computational efficiency of field distributions in electron optical systems and shortens the computational time.     

Astigmatism of the radiation of semiconductor stripe-geometry lasers

The effect of injection current on the intensity and angular distribution of radiation in TE- and TM-polarized modes of diode lasers with a stripe geometry and double GaAs-AlGaAs-based heterostructure is investigated. The analysis of the angular distribution of radiation revealed the nonmonotonic behavior of its astigmatism with increase in the current. The coefficient of astigmatism in the mode of lasing is substantially higher for the TE-mode than for the TM-mode. An increase in radiation astigmatism is accompanied by a decrease in the differential effectiveness and polarization degree. These specific features are explained by the interaction of the defocusing action of distribution of the refractive index n(x) in the plane of the p-n-transition with a minimum under the center of the stripe contract (at x=0) with the focusing action of the gain coefficient distribution. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 67, No. 4, pp. 461–464, July–August, 2000.     

On the field method in non-holonomic mechanics

This paper deals with the generalization of the field method to non-holonomic systems whose motion is subject to either non-linear constraints or those of a higher order, while their motion is modeled by the generalized Lagrange equations of the second kind. Two examples are given to illustrate the theory.The project supported by the Ministry of Science, Technologies and Development, Republic of Serbia (1874)     

Time-resolved imaging of the electrical breakdown of planar microelectrode gap in atmospheric air

The aim of this study was to obtain time-resolved images of the electrical breakdown of a planar microelectrode gap along the surface of a glass substrate in atmospheric air. The obtained images revealed details of the events leading to the breakdown. First, a point light emission appeared at the cathode, indicating breakdown initiated by the field emission of electrons from the cathode under extremely high electric fields. Then, a flare-like broad light emission was generated at the anode. Finally, breakdown occurred over the entire gap by the expansion and merger of the two emissions.     

Utilization of surface plasmon resonance of Au/Pt nanoparticles for highly photosensitive ZnO nanorods network based plasmon field effect transistor

Hydrothermally processed highly photosensitive ZnO nanorods based plasmon field effect transistors (PFETs) have been demonstrated utilizing the surface plasmon resonance coupling of Au and Pt nanoparticles at Au/Pt and ZnO interface. A significantly enhanced photocurrent was observed due to the plasmonic effect of the metal nanoparticles (NPs). The Pt coated PFETs showed I_on/I_off ratio more than 3 × 10⁴ under the dark condition, with field-effect mobility of 26 cm² V⁻¹ s⁻¹ and threshold voltage of −2.7 V. Moreover, under the illumination of UV light (λ = 350 nm) the PFET revealed photocurrent gain of 10⁵ under off-state (−5 V) of operation. Additionally, the electrical performance of PFETs was investigated in detail on the basis of charge transfer at metal/ZnO interface. The ZnO nanorods growth temperature was preserved at 110 °C which allowed a low temperature, economical and simple method to develop highly photosensitive ZnO nanorods network based PFETs for large scale production.     

La或N掺杂SiC纳米线的制备、场发射性能及第一性原理计算

采用化学气相沉积法和气相掺杂法, 分别制备了La 或N掺杂的SiC 纳米线. 利用场发射扫描电子显微镜(FE-SEM)、透射电子显微镜(TEM)、选区电子衍射(SAED)、高分辨透射电子显微镜(HRTEM)、X射线能量色散谱(EDS)分析和X射线衍射(XRD)等测试手段对两种产物的微观形貌、元素组成和物相结构进行了系统表征. 以合成产物作为阴极, 对其场发射性能进行测试, 结果表明: SiC 纳米线的开启电场值和阈值电场值由未掺杂的2.3、6.6 V·μm^-1分别降低为1.2、5.2 V·μm^-1(La 掺杂)和0.9、0.4 V·μm^-1(N 掺杂). 采用Material Studio 软件中的Castep 模块建立(3×3×2)晶格结构模型, 对未掺杂、La 或N掺杂SiC 的能带结构和态密度进行计算, 结果显示: La或N掺杂后, 在费米能级附近产生了新的La 5d或N 2p掺杂能级, 导致禁带宽度(带隙)变窄, 使得价带电子更容易跨越禁带进入导带, 从而改善SiC纳米线的场发射性能.     

A single theory for some quasi-static,supersonic, atomic,and tectonic scale applications of dislocations

We describe a model based on continuum mechanics that reduces the study of a significant class of problems of discrete dislocation dynamics to questions of the modern theory of continuum plasticity. As applications, we explore the questions of the existence of a Peierls stress in a continuum theory, dislocation annihilation, dislocation dissociation, finite-speed-of-propagation effects of elastic waves vis-a-vis dynamic dislocation fields, supersonic dislocation motion, and short-slip duration in rupture dynamics.