花状CeO2/TiO2异质结的构筑及光催化性能

采用溶剂热法制备了三维花状CeO₂/TiO₂异质结光催化剂,然后以甲基橙(MO)为模拟有机污染物,在氙灯照射下考察了其光催化活性。结果表明,花状结构由纳米片和纳米颗粒复合而成,纳米片上均匀地附着CeO₂颗粒。Ce/Ti的物质的量之比(n_Ce/n_Ti)和溶剂热时间影响异质结的光催化性能,当n_Ce/n_Ti=0.1、溶剂热时间为6 h时,CeO₂/TiO₂的光催化活性达到最佳,氙灯照射50 min的降解率达95%,光催化活性优于纯TiO₂,这主要是CeO₂和TiO₂形成了异质结,有利于光生电子和空穴的分离。     

The ferroelectric phase of CdTiO3: A powder neutron diffraction study

The synthesis of bulk samples of polycrystalline CdTiO₃ in both the rhombohedral ilmenite and orthorhombic perovskite forms is described and the structures of these have been refined using powder neutron diffraction data. This involved the preparation of samples enriched in ¹¹⁴Cd. Cooling perovskite-type CdTiO₃ to 4 K induces a ferroelectric phase transition, with the neutron data suggesting the low temperature structure is in Pna2₁. Mode analysis shows the polar mode to be dominant at low temperatures. The ilmenite-structure of CdTiO₃ is compared with that of ZnTiO₃. The refined scattering length of the ¹¹⁴Cd is estimated to be 5.56 fm. Attempts to dope CdTiO₃ with Ca and Sr are described.     

Structural characterization and Curie temperature determination of a sodium strontium niobate ferroelectric nanostructured powder

The Curie temperature and its correlation with the magnitude of the displacement of the niobium atom from the center of [NbO₆] octahedra in NaSr₂Nb₅O₁₅ nanostructured powder were investigated. A single powder was prepared by high-energy ball milling. A powder with an average crystallite size of 37 nm was prepared by calcining the precursor at 1423 K. The refinement of the structural parameters was carried out by the Rietveld method. NaSr₂Nb₅O₁₅ exhibits tetragonal symmetry with the tungsten bronze structure (a=b=12.3495 (6) Å, c=3.8911 (2) Å, V=593.432 (5) Å³, and Z=2). The site occupancy of the Na⁺ and Sr²⁺ cations and the interatomic distances between the niobium and oxygen atoms were derived. The [NbO₆] octahedron undergoes both rotation and tilting depending on the crystallographic site. The Curie temperature of the powder was derived using both the impedance and infrared spectroscopy methods.     

Micromechanical modelling of remanent properties of morphotropic PZT

The present paper investigates the capability of micromechanical material models to predict the ferroelectric behaviour of morphotropic PZT ceramics in a rate-independent approximation based on realistic microscopic material parameters. Starting point is a three-dimensional tetragonal model, which builds on the model of Pathak and McMeeking [2008. Three-dimensional finite element simulations of ferroelectric polycrystals under electrical and mechanical loading. Journal of the Mechanics and Physics of Solids 56, 663-683]. Volume fractions of the crystallographic variants represent the domain structure inside the grains. Interactions between the grains are taken into account by means of a representative volume element of the grain compound. A simplified set of realistic microscopic material parameters of the lattice in terms of Young's modulus, Poisson's ratio, dielectric constant, and spontaneous strain and polarisation is derived from experimental data and theoretical results given in the literature. The simulation of the macroscopic remanent polarisation and strain response due to two load cases shows explicitly that the tetragonal model is not capable to reproduce the behaviour of morphotropic PZT. Therefore, the model is extended by the rhombohedral phase, allowing a mixture of both phases with varying quantities inside the grains. A comparison of our results with experimental data shows a remarkably good agreement, revealing the capability of the extended model.     

Properties of the defect mode in one-dimensional ferroelectric Si/C60 photonic crystals

In the present paper, a novel photonic crystal (PC) defect mode is designed by inserting a ferroelectric material layer (LiNbO₃) into Si/C₆₀ one-dimensional PCs. The band structure of the ferroelectric PCs is numerically analyzed by the transfer matrix method (TMM). The width of the photonic band gap increases by 80 nm and a defect mode appears at a central wavelength of 680 nm when a 150 nm LiNbO₃ layer is inserted into the Si/C₆₀ PC structure. The defect mode in the band gap shifts linearly with the change in electric field. The defect mode shifts by 11.2 nm toward shorter wavelengths when the thin film is subjected to a DC voltage of 1 KV.     

ZnO纳米棒的低温溶液法制备、光电特性研究及其在有机/无机复合电致发光中的应用

利用水热法制备了垂直于衬底的定向生长的ZnO纳米棒,利用扫描电子显微镜及光致发光的方法对其形貌及光学特性进行了表征,利用场发射性能测试装置对ZnO纳米棒的场发射性能进行了测试.结果表明:利用水热法在较低的温度(95 ℃) 下生长了具有较好形貌和结构的ZnO纳米棒,并表现出了较好的场发射特性,当电流密度为1 μA/cm²时,开启电场是2.8 V/μm,当电场为6.4 V/μm时,电流密度可以达到0.67 mA/cm²,场增强因子为3360.稳定性测试表明,在5 h内,4.5 V/μm的电场下,其波动不超过25%.将制备的ZnO纳米棒应用到有机/无机电致发光中,其中ZnO纳米棒为电子传输层,m-MTDATA(4,4',4″-tris{N,(3-methylphenyl)-N-phenylamino}-triphenylamine) 为空穴传输层,得到了ZnO的342 nm的紫外电致发光,此发光较ZnO纳米棒光致发光的紫外发射有约40 nm的蓝移. 关键词： ZnO纳米棒 场发射 水热法 有机/无机复合电致发光     

使用AlN/GaN超晶格势垒层生长高Al组分AlGaN/GaN HEMT结构

在蓝宝石衬底上生长了以AlN/GaN超晶格准AlGaN合金作为势垒的HEMT结构材料,并与传统AlGaN合金势垒样品进行了对比.在高Al组分(≥40%)情况下,超晶格势垒样品的表面形貌明显改进,电学性能特别是2DEG面电子浓度也有所改进.对超晶格势垒生长参数进行了初步优化,使得HEMT结构薄层电阻进一步降低,最后获得了251 Ω/□的薄层电阻. 关键词： AlGaN/GaN 结构 AlN/GaN超晶格 二维电子气 高电子迁移率晶体管     

Spin-polarizing properties of heterostructures with magnetic nano elements

The problem of electron resonant and non-resonant scatterings on two magnetized barriers is studied in the one-dimension. The transfer-matrix is built up to exactly calculate the coefficient of the electron transmittance through the system of two magnetic barriers with non-collinear magnetizations. The polarization of the transmitted electron wave for resonance and non-resonance transmittances is calculated. The transmittance coefficient and spin polarization can be drastically enhanced and controlled by the angle between the barrier magnetizations.     

Dephasing of optically generated electron spins in semiconductors

Dephasing of optically generated electron spins in the presence of the external magnetic field and electric bias in semiconductor nano-structures has been studied by time- and polarization-resolved spectrometry. The obtained experimental data are presented in dependence of the strength of the magnetic field. The optically generated electron-spin precession frequency and dephasing time and rate are estimated. It is found that both the spin precession frequency and dephasing rate increase linearly with the external magnetic field up to about 9 T. However, the spin dephasing time is within sub-μs and is found to decrease exponentially with the strength of the external magnetic field. The results are discussed by exploring possible mechanisms of spin dephasing in low-dimensional semiconductor structures, where the quantum-confinement persists within the nano-range.     

ZnMgO/ZnO异质结构中二维电子气的研究

论文根据ZnMgO/ZnO异质结构二维电子气的能带结构及相关理论模型, 采用一维Poisson-Schrodinger方程的自洽求解, 模拟计算了ZnMgO/ZnO异质结构中二维电子气的分布及其对ZnMgO势垒层厚度及Mg组分的依赖关系. 研究发现该异质结构中ZnMgO势垒层厚度存在一最小临界值: 当垒层厚度小于该临界值时, 二维电子气消失, 当垒层厚度大于该临界值时, 其二维电子气密度随着该垒层厚度的增加而增大; 同时研究发现ZnMgO势垒层中Mg组分的增加将显著增强其二维电子气的行为, 导致二维电子气密度的明显增大; 论文对模拟计算获得的结果与相关文献报道的实验结果进行了比较, 并从极化效应和能带结构的角度进行了分析和讨论, 给出了合理的解释. 关键词： 氧化锌 二维电子气 异质结构 理论计算