Gate-induced drain leakage (GIDL) in MFMIS and MFIS negative capacitance FinFETs

The gate induced drain leakage (GIDL) effect in negative capacitance (NC) FinFET is investigated. A Landau–Ginzburg–Devonshire equation (which considers the polarization gradient in ferroelectric material) is used to estimate the characteristics of the NC FinFET. Specifically, metal-ferroelectric-metal-insulator-semiconductor (MFMIS) and metal-ferroelectric-insulator-semiconductor (MFIS) NC FinFETs are compared, in order to figure out the effect of the internal metal layer on the GIDL effect. To analyze the impact of the polarization gradient on the GIDL effect in NC FinFET, a polarization gradient coefficient is varied. For MFMIS, the polarization gradient doesn't significantly affect the device performance. The subthreshold swing improves but the GIDL effect deteriorates because of the “uniform” NC effect in channel region. For MFIS, the device performance is explicitly affected by the polarization gradient. Smaller polarization gradients result in non-uniform NC effect in channel region, resulting in severe GIDL effects. On the other hand, higher polarization gradients alleviate GIDL effects.     

Tuning the electronic properties of hydrogen passivated C3N nanoribbons through van der Waals stacking

The two-dimensional (2D) C₃N has emerged as a material with promising applications in high performance device owing to its intrinsic bandgap and tunable electronic properties. Although there are several reports about the bandgap tuning of C₃N via stacking or forming nanoribbon, bandgap modulation of bilayer C₃N nanoribbons (C₃NNRs) with various edge structures is still far from well understood. Here, based on extensive first-principles calculations, we demonstrated the effective bandgap engineering of C₃N by cutting it into hydrogen passivated C₃NNRs and stacking them into bilayer heterostructures. It was found that armchair (AC) C₃NNRs with three types of edge structures are all semiconductors, while only zigzag (ZZ) C₃NNRs with edges composed of both C and N atoms (ZZCN/ CN) are semiconductors. The bandgaps of all semiconducting C₃NNRs are larger than that of C₃N nanosheet. More interestingly, AC-C₃NNRs with CN/CN edges (AC-CN/CN) possess direct bandgap while ZZ-CN/CN have indirect bandgap. Compared with the monolayer C₃NNR, the bandgaps of bilayer C₃NNRs can be greatly modulated via different stacking orders and edge structures, varying from 0.43 eV for ZZ-CN/CN with AB′-stacking to 0.04 eV for AC-CN/CN with AA-stacking. Particularly, transition from direct to indirect bandgap was observed in the bilayer AC-CN/CN heterostructure with AA′-stacking, and the indirect-to-direct transition was found in the bilayer ZZ-CN/CN with ABstacking. This work provides insights into the effective bandgap engineering of C₃N and offers a new opportunity for its applications in nano-electronics and optoelectronic devices.     

Z型CdIn2S4/ZnSnO3异质结的构筑及其光催化产氢性能

通过高温煅烧ZnSn(OH)₆前驱体制备了双壳中空立方体结构的ZnSnO₃(ZSO),进而采用水热法将CdIn₂S₄(CIS)纳米晶包裹在ZSO表面,成功制备了CdIn₂S₄/ZnSnO₃(CIS/ZSO)异质催化剂。活性产氢实验结果表明,CIS、ZSO物质的量之比为12%时制备的12% CIS/ZSO具有优异的光催化产氢性能,在3 h内产氢量为1 676.48 μmol·g^-1,分别是ZSO和CIS的12倍和8倍。ZSO光催化析氢反应活性的增强归因于CIS/ZSO异质结构的成功构建,异质界面的形成显著提高了光生电子/空穴对的分离效率,降低了其复合率。通过对电荷转移路径的分析,提出了可能的反应机理。     

ZnIn2S4/TiO2/Ag复合光催化剂的制备及分解水制氢性能

首先采用溶剂热法将1D TiO_2纳米带均匀地穿插到片层结构组装而成的3D ZnIn_2S_4微球中,所形成的异质结构能有效抑制光生电子-空穴对。其次利用光沉积法将0D Ag纳米粒子负载在3D ZnIn_2S_4/1D TiO_2异质结构上。得益于0D Ag纳米粒子的等离子体效应及电子助催化剂作用,三元3D ZnIn_2S_4/1D TiO_2/0D Ag复合光催化剂在分解水制氢方面表现出优异的性能。在模拟太阳光照射下,ZnIn_2S_4/TiO_2/Ag复合光催化剂的产氢速率达到715μmol·g~(-1)·h~(-1),相对于ZnIn_2S_4/TiO_2、ZnIn_2S_4/P25、ZnIn_2S_4、TiO_2和P25分别提高了2.7倍、3.3倍、3.8倍、184倍和518倍。同时借助于X射线衍射、扫描电子和透射电子显微镜、X射线光电子能谱和紫外可见漫反射光谱等表征手段进一步论证了复合催化剂的优异性能。     

Highly elastic cobweb-like SiO/CNF composites with reconstructed heterostructure for high-efficient lithium storage

The silicon-based materials are promising candidates for lithium-ion batteries owing to their high energy density. However, achieving long lifespan under realistic conditions remains a challenge because of the volume expansion and low conductivity. In this work, the highly elastic cobweb-like composite materials consisted by SiO and nanofibers are designed and fabricated for high-efficient lithium storage by ball-milling & electrostatic spinning method. The reconstructed heterostructure and highly elastic nanofibers can simultaneously increase the conductivity and inhibit the “expansion effect” of silicon-based materials. The constructed electrode of n-SiO/CNF delivers an initial capacity of 1700 mAh/g, and maintains the capacities over 1000 mAh/g after 100 cycles at the current density of 500 mA/g. Meanwhile, this electrode can give an initial coulombic efficiency over 85% and maintains at 98% in the following charge/discharge processes. Furthermore, it exhibits efficient long-term electrochemical performance, maintaining the capacity at about 1000 mAh/g at a high current density of 1000 mA/g after 1000 cycles. This work could provide a promising strategy for enhancing the performance of silicon-based composite materials for practical application in lithium-ion batteries.     

基于二维材料WX_2构建的范德华异质结的结构和性质及应变效应的理论研究

二维材料过渡金属硫属化物(TMDs),因其优越的物理化学特性及其在光电子器件、光催化等领域的潜在应用价值,得到了人们的广泛关注。基于TMDs材料可以构建具有不同性能的范德华(vdW)异质结,但构建的异质结由于其固有的能带带隙大小限制了其在全光谱上的响应,因而对其能带带隙调控变得十分重要。本文基于第一性原理方法系统地研究了WX_2 (X=S, Se, Te)从单层到体相的结构和性质,以及由此组装的vdW异质结构WS_2/WSe_2、WS_2/WTe_2和WSe_2/WTe_2的结构和性质以及应力应变对异质结构的能带带隙的影响。结果表明:结合HSE06泛函和自旋轨道耦合(SOC)效应的计算方案可以精确描述WX_2体系;异质结构WS_2/WSe_2,WS_2/WTe_2和WSe_2/WTe_2呈现type-II能带分类;在施加单轴或双轴的应力应变后,能带带隙大小发生相应改变,当晶格形变大于4%后,异质结构由半导体特性变成具有金属性。这些研究为光电子器件的设计提供了重要的指导意义。     

富氮洋葱碳包覆的Ni/NiFe2O4纳米棒析氧电催化剂

将镍铁金属配位聚合物前驱体在惰性气氛下热分解制备了富氮洋葱碳(ONC)包覆的Ni/Ni Fe_2O_4多孔纳米棒复合析氧电催化剂,与Ni@ONC,Ni Fe_2O_4材料及传统Ru O_2催化剂相比,得益于这种富氮洋葱碳包覆的Ni/Ni Fe_2O_4一维多孔纳米异质结构,Ni/Ni Fe_2O_4@ONC材料拥有更优异的导电性能和更大的电化学活性面积(0.149 m F),因而表现出更优异的析氧电催化性能。Ni/Ni Fe_2O_4@ONC纳米棒在1 mol·L~(-1) KOH溶液中,10 m A·cm-2下的析氧过电位仅为299 m V,塔菲尔斜率为73 m V·dec-1,展现出优异的析氧稳定性能。     

Synthesis and Characterization of an α-Fe2O3-Decorated g-C3N4 Heterostructure for the Photocatalytic Removal of MO

This study describes the preparation of graphitic carbon nitride (g-C₃N₄), hematite (α-Fe₂O₃), and their g-C₃N₄/α-Fe₂O₃ heterostructure for the photocatalytic removal of methyl orange (MO) under visible light illumination. The facile hydrothermal approach was utilized for the preparation of the nanomaterials. Powder X-ray diffraction (XRD), Scanning electron microscopy (SEM), Energy dispersive X-ray (EDX), and Brunauer–Emmett–Teller (BET) were carried out to study the physiochemical and optoelectronic properties of all the synthesized photocatalysts. Based on the X-ray photoelectron spectroscopy (XPS) and UV-visible diffuse reflectance (DRS) results, an energy level diagram vs. SHE was established. The acquired results indicated that the nanocomposite exhibited a type-II heterojunction and degraded the MO dye by 97%. The degradation ability of the nanocomposite was higher than that of pristine g-C₃N₄ (41%) and α-Fe₂O₃ (30%) photocatalysts under 300 min of light irradiation. The formation of a type-II heterostructure with desirable band alignment and band edge positions for efficient interfacial charge carrier separation along with a larger specific surface area was collectively responsible for the higher photocatalytic efficiency of the g-C₃N₄/α-Fe₂O₃ nanocomposite. The mechanism of the nanocomposite was also studied through results obtained from UV-vis and XPS analyses. A reactive species trapping experiment confirmed the involvement of the superoxide radical anion (O₂^•−) as the key reactive oxygen species for MO removal. The degradation kinetics were also monitored, and the reaction was observed to be pseudo-first order. Moreover, the sustainability of the photocatalyst was also investigated.     

Multiferroic behaviour of epitaxial NiFe2O4--BaTiO3 heterostructures

Multiferroic NiFe2O4 （NFO）-BaTiO3 （BTO） bilayered thin films are epitaxially grown on （001） Nb-doped SrTiO3 （STO） substrates by pulsed-laser deposition （PLD）. Different growth sequences of NFO and BTO on the substrate yield two kinds of epitaxial heterostructures with （001）-orientation, i.e. （001）-NFO/（001）-BTO/substrate and （001）- BTO/（001）-NFO/substrate. Microstructure studies from x-ray diffraction （XRD） and electron microscopies show differences between these two heterostructures, which result in different multiferroic behaviours. The heterostructured composite films exhibit good coexistence of both ferroelectric and ferromagnetic properties, in particular, obvious magnetoelectric （ME） effect on coupling response.     

液相外延制备InGaAsP/InP掩埋异质结若干工艺问题的讨论

本文对InGaAsP/InP(DC-PBH)激光器掩埋异质结液相外延生长中的几个关键工艺问题进行了研究,提出了获得有利于沟道掩埋生长的理想沟道几何图形的新的腐蚀配方(Br_2/HBr),对二次外延再生长光刻腐蚀面损伤层和有害杂质的去除采用了阳极氧化工艺,同时探索了利用二次外延过程中Zn扩散来控制限制层(3)掺杂的新方法,在研究基础上制造了重现性好且性能良好的1.3μm激光二极管,室温时,阈值电流最低小于25mA,典型值为30mA,在60mA直流电流的驱动下,光输出功率高达12.5mW.