磁强计的计算机接口电路故障分析

本文介绍了震动样品磁强计 (VSM)计算机接口电路的故障分析及故障排除     

沿岸流不稳定多模式运动的理论分析

目前对沿岸流不稳定研究比较成熟的理论基础是线性不稳定理论,该理论假定增长率最大的不稳定模式决定着沿岸流的波动特性,但实验分析结果表明对有些情况下该假定难以解释实验中观测到的情况.利用沿岸流不稳定运动的多模式理论分析了实验中观测到的情况.结果表明沿岸流速度剖面对于沿岸流不稳定运动模式影响很大,特别是速度剖面的变化会导致不稳定模式出现多个模式的情况,即增长率曲线出现多于两个峰的情况.用解析的速度剖面分析了速度剖面前剪切和后剪切同时变化及单独变化对于沿岸流不稳定多模式运动的影响.结果表明对于坡度为1:100的平直斜坡的情况用前剪切不稳定理论可以解释其观测到的现象.      

Persistent currents for Coulomb interacting electrons on 2d disordered lattices

A Wigner crystal structure of the electronic ground state is induced by strong Coulomb interactions at low temperature in clean or disordered two-dimensional (2d) samples. For fermions on a mesoscopic disordered 2d lattice, being closed to a torus, we study the persistent current in the regime of strong interaction at zero temperature. We perform a perturbation expansion starting from the Wigner crystal limit which yields power laws for the dependence of the persistent current on the interaction strength. The sign of the persistent current in the strong interaction limit is independent of the disorder realization and strength. It depends only on the electro-statically determined configuration of the particles in the Wigner crystal. Received 14 March 2000     

汶川地震断裂带断层泥矿物拉曼光谱特征

系统测定了汶川地震断裂带深溪沟剖面断层泥中石英和方解石颗粒的拉曼谱峰。测试结果表明,受到断层滑动、 断裂带构造挤压应力作用,所有样品的特征拉曼谱峰向高波数偏移。所测样品中微裂隙发育、 与绿泥石等粘土矿物共生的石英颗粒的464 cm-1谱峰向高波数偏移量为2.50 cm-1,而比较完整的纯净石英颗粒的464 cm-1谱峰偏移量为3.78 cm-1。这可能是由于石英颗粒早期发育大量微裂隙,并填充了松散的粘土矿物,增加了石英颗粒的表面积,从而加速了石英内应力的释放。断层泥中方解石颗粒的1 085 cm-1谱峰向高波数偏移2.70 cm-1,为汶川8.0级地震断层面所受构造压应力所致。根据方解石颗粒拉曼谱峰的变化及已有的实验数据,估计汶川地震发生时断层面所受压应力的下限为496 MPa。研究表明,对断裂带内矿物颗粒进行拉曼谱峰测试,可以为推测断层活动时断层面所受到的力学机制提供依据。     

参数寻优支持向量机在基于光声光谱法的变压器故障诊断中的应用

为了解决变压器气相色谱分析法故障诊断中存在的操作繁琐、消耗待测气体和载气、检测周期长等缺点,提出了利用光声光谱技术检测变压器油中CH₄,C₂H₂,C₂H₄,C₂H₆,H₂五种特征气体的含量并计算C₂H₂/C₂H₄,CH₄/H₂,C₂H₄/C₂H₆三对比值数据。将五种SVM类型和四种核函数采用交叉组合建立20种不同的支持向量机模型,并采用启发式算法对于惩罚因子c和g的取值进行参数寻优,以建立变压器故障诊断准确率最高、最快运行速度的支持向量机模型。启发式算法主要对比研究了粒子群算法和遗传算法在寻优精度与速度上的效果。仿真实验结果表明C-SVC模型、RBF核函数、遗传算法寻优构成的支持向量机模型对变压器故障的诊断准确率最高,测试集达到97.5%,训练集达到98.333 3%,并且遗传算法的寻优速度快于粒子群算法2倍左右。该方法具有操作简单、非接触性测量、不消耗载气、检测周期短、稳定性和灵敏度高等优点。可以代替传统的气相色谱分析法进行变压器故障诊断,满足变压器故障诊断的实际工程需要。     

Application of the method of equivalent edge currents to composite scattering from the cone-cylinder above a dielectric rough sea surface

Compared with scattering from a rough surface only, composite scattering from a target above a rough surface has become so practical that it is a subject of great interest. At present, this problem has been solved by some numerical methods which will produce an enormous calculation amount. In order to overcome this shortcoming, the reciprocity theorem (RT) and the method of equivalent edge currents (MEC) are used in this paper. Due to the advantage of RT, the difficulty in computing the secondary scattered fields is reduced. Simultaneously, MEC, a high-frequency method with edge diffraction considered, is used to calculate the scattered field from the cone-cylinder target with a high accuracy and efficiency. The backscattered field and the polarization currents of the rough sea surface are evaluated by the Kirchhoff approximation (KA) method and physical optics (PO) method, respectively. The effects of the backscattering radar cross section (RCS) and the Doppler spectrum on the size of the target and the windspeed of the sea surface for different incident angles are analysed in detail.     

Anisotropic transport properties in the phase-separated La_(0.67)Ca_(0.33)MnO_3/NdGaO_3 (001) films

The anisotropic transport property was investigated in a phase separation La_(0.67)Ca_(0.33)MnO_3(LCMO) film grown on(001)-oriented Nd GaO_3(NGO) substrate. It was found that the resistivity along the b-axis is much higher than that along the a-axis. Two resistivity peaks were observed in the temperature dependent measurement along the b-axis, one located at 91 K and the other centered at 165 K. Moreover, we also studied the response of the resistivities along the two axes to various electric currents, magnetic fields, and light illuminations. The resistivities along the two axes are sensitive to the magnetic field. However, the electric current and light illumination can influence the resistivity along the b-axis obviously, but have little effect on the resistivity along the a-axis. Based on these results, we believe that an anisotropicstrain-controlled MnO_6 octahedra shear-mode deformation may provide a mechanism of conduction filaments paths along the a-axis, which leads to the anisotropic transport property.     

Low energy electromagnetic processes based on the chiral effective field theory approach

Chiral effective field theory describes the interaction of nucleons and pions in the low-energy regime of QCD.This theory offers a consistent picture of nuclear forces and nuclear current operators.We study the electromagnetic processes based on ChEFT dynamical picture and compare our predictions to results obtained in the conventional framework.In particular,we consider low energy photo-disintegration of the deuteron at different orders of the chiral expansion.We investigate a role of different ingredients in the two-nucleon current operator.For the first time calculations involve consistent contributions from long-range two-pion exchange currents which appear at next-to-leading order of the chiral expansion.We present novel results for cross sections and various polarization observables.     

带有一个Stub的三臂环中的持续电流(英文)

采用一维量子波导理论研究了带有一个Stub的三臂环中的透射系数和持续电流.探讨了透射系数和持续电流对环的尺寸和Stub长度的依赖关系.结果发现:当k_1取某一个固定值,满足kL=nπ时,系统出现反共振现象.而且适当地调节系统的参数,可以出现明显的Fano共振现象.     

Ion implantation of Zn,Se and Cd in BP crystals

Ion implantation of 70 keV Zn, Se and Cd has been done in n-type BP as a function of dose and implantation temperature, and defects and lattice locations have been measured by means of channeling techniques. Crystals used were grown on Si substrates by vapor phase epitaxy. It was observed that epitaxial layers thicker than 6μm have no defects due to a lattice mismatch between Si and BP. High temperature implantation above 500°C gave high substitutional fraction of ～ 70% and low residual defects. Reordering of an amorphous layer formed by implantation below 400°C was not observed even after annealing at 900°C. The present results indicate that the effect of implantation temperature is the same with other III-V compounds such as GaAs and Gap.