基于超声分子束和普通充气的聚变等离子体密度反馈实验研究

本文介绍了全超导托卡马克装置EAST实验中等离子体密度反馈的方法和结果. EAST密度反馈采用普通充气 (gas puffing) 和超声分子束 (supersonic molecule beam injection, SMBI) 在放电过程中反馈进气, 获得稳定、预期的等离子体密度. 典型的一天放电实验中, 每次放电的充气量和壁滞留的变化可分为两个阶段: 第一阶段为初始约20次放电, 该阶段充气量非常高且呈指数趋势下降, 粒子滞留率为80%–90%, 壁滞留迅速上升. 第二阶段为随后的约50次放电, 该阶段充气量较小且保持稳定, 粒子滞留率为50%–70%, 壁滞留缓慢上升. SMBI的加料效率为15%–30%, 延迟时间小于5 ms. 因此使用SMBI 进行密度反馈效果优于gas puffing反馈, 相同条件下前者充气量较后者减少了～ 30%, 壁滞留减少了～ 40%, 再循环系数也相应减少. gas puffing反馈时, 采用脉宽调制模式效果优于脉幅调制模式. SMBI密度反馈可以作为未来EAST长脉冲高参数放电的主要手段之一. 关键词： 密度反馈 超声分子束 再循环 壁滞留     

Imbert–Fedorov shifts of a Gaussian beam reflected from uniaxially anisotropic chiral media

We study the Imbert–Fedorov (IF) shifts of a reflected Gaussian beam from uniaxially anisotropic chiral media (UACM), where the chirality appears only in one direction and the host medium is a uniaxial crystal or an electric plasma. The numerical results are presented for three kinds of UACM, respectively. It is found that the IF shifts are closely related to the propagation properties of the two eigenwaves in the UACM. In general, when either of the eigenwaves is totally reflected, the IF shifts can change abruptly near the critical angle. The cross-polarized reflection coefficient has a greater effect on the spatial IF (SIF) shift than on the angular IF (AIF) shift, and the sign of the AIF shift depends mainly on that of the difference between the co-polarized reflectivity. By designing artificially the electromagnetic parameters of the UACM, we can control the IF shifts and acquire their more abundant properties.     

The influence of implanted xenon on the sputtering yield of silicon

Following implantation labeling with either 200 or 270 keV Xe⁺ the sputtering yield of silicon bombarded with 20 keV Xe⁺ has been determined in situ by means of the backscattering technique (Y = 3.0 ± 0.3 (atoms/ion)). Yield enhancement by up to 60% was observed in cases where the implantation-induced xenon concentrations exceeded the saturation concentration during sputtering. The effect is attributed to (i) an increase in energy deposition at the surface introduced by pronounced xenon loading of the target and (ii) lowering of the surface binding energy. As a consequence the energy dependence of the xenon sputtering yield of silicon is expected to be strongly affected by the energy dependence of the xenon saturation concentration in silicon. Available experimental data support this idea.     

Spatial distribution of defects produced by boron ion implantation of silicon

A simple technique for the study of the spatial distribution of the damage produced by ion implantation of silicon has been developed. The damage depth distribution for 40 keV boron ions in silicon has been studied at irradiation doses from 7 × 10¹¹ to 3.9 × 10¹⁴ ions/cm² and the relative defect peak depth R _d/R _p = 0.85 determined. An increase of layer conductivity as the surface part of the implanted layer is removed has been revealed. This effect is caused by the presence of radiation defects in the surface region of the layer. The “electrical” cluster diameter is about 28 A and the overlapping cluster dose is close to 1 × 10¹³ ions/cm².     

A Wall Effect in the Photothermal Beam Deflection Response of Infrared-Absorbing Gases

FTIR photothermal beam deflection (PBD) spectroscopy was used to record PBD spectra of IR-absorbing gases in presence of IR-absorbing and non-absorbing solids. The presence of the solid, IR-absorbing or not, causes asymmetry at the juncture of the IR and probe laser     

Infrared Observation of the Effects of Aqueous Oxidizing Agents on the Functional Groups on Carbon Surfaces

FTIR photothermal beam deflection spectroscopy (PBDS) was used to record infrared spectra of medium-temperature carbons before and after they had been subjected to treatments with aqueous HNO₃ or H₂O₂ solution. Changes in the functional groups present on the carbon surfaces can be clearly observed.     

Propagation characteristics of tilted partially coherent rectangular flat-topped beam in turbulent atmosphere

In this paper, the effects of atmospheric turbulence on the intensity distribution of a tilted Rectangular Partially Coherent Flat-Topped (RPCFT) beam were studied. An analytical formula for the intensity distribution was derived. POWER In Bucket (PIB) value is calculated numerically. The effects of source parameters – such as correlation length, order of flatness and tilt coefficient – on the intensity were analyzed. Detailed analysis demonstrates that these parameters have an influence on beam propagation properties. The analyses are illustrated by numerical examples and graphs.     

Generating and shifting a spherical focal spot in a 4Pi focusing system illuminated by azimuthally polarized beams

We aim to theoretically investigate the focusing property of a 4Pi configuration under the illumination of azimuthally polarized high-order Bessel–Gaussian beams. The radial component is produced in the focal region through the introduction of a spiral phase plate. The focal region differs from the zero radial intensity component of the azimuthally polarized beams without the spiral phase plate. The spherical focal spot is generated by selecting an appropriate annular obstruction. The position of the focal spot can be shifted.     

TEM study of ion implanted GaAs after pulsed electron beam annealing

Abstract

(001) GaAs single crystals were implanted with 150 keV Cr⁺ ions using a dose of 5 × 10¹⁵ ions cm^?2. The amorphized surface layers were subjected to pulsed electron beam annealing at energy densities in the range 0–1.3 J cm^?2. A detailed TEM investigation of the damaged and annealed surface layer was conducted. These observations were correlated with backscattering results.