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41.
Guangrui Chen Yuxing Yan Dr. Jie Wang Prof. Yong Sik Ok Guiyuan Zhong Prof. Bu Yuan Guan Prof. Yusuke Yamauchi 《Angewandte Chemie (Weinheim an der Bergstrasse, Germany)》2020,132(44):19831-19836
Mesoporous core–shell nanostructures with controllable ultra-large open channels in their nanoshells are of great interest. However, soft template-directed cooperative assembly to mesoporous nanoshells with highly accessible pores larger than 30 nm, or even above 50 nm into macroporous range, remains a significant challenge. Herein we report a general approach for precisely tailored coating of hierarchically macro-/mesoporous polymer and carbon shells, possessing highly accessible radial channels with extremely wide pore size distribution from ca. 10 nm to ca. 200 nm, on diverse functional materials. This strategy creates opportunities to tailor the interfacial assembly of irregular mesostructured nanounits on core materials and generate various core–shell nanomaterials with controllable pore architectures. The obtained Fe,N-doped macro-/mesoporous carbon nanoshells show enhanced electrochemical performance for the oxygen reduction reaction in alkaline condition. 相似文献
42.
E. C. Ferreira J. A. P. da Costa J. A. K. Freire G. A. Farias V. N. Freire 《Applied Surface Science》2002,190(1-4):191-194
Confined excitons in non-abrupt GaAs/AlxGa1−xAs single quantum wells are studied. The graded interfaces are described taking into account fluctuations in their thickness a and positioning with respect to the abrupt interface picture. Numerical results for confined (0,0),(1,1) and (0,2) excitons in GaAs/Al0.3Ga0.7As quantum wells show that while the interfacial fluctuations produce small changes (<0.5 meV) in the exciton binding energies, the confined exciton energies can be red- or blue-shifted as much as 25 meV for wells with mean width of 50 Å and 2 ML wide interfaces. 相似文献
43.
S. J. Cheng W. Sheng P. Hawrylak S. Raymond S. Studenikin A. Sachrajda Z. Wasilewski A. Babinski M. Potemski G. Ortner M. Bayer 《Physica E: Low-dimensional Systems and Nanostructures》2004,21(2-4):211
We present results of calculations and experiments on electron–hole complexes in InGaAs/GaAs self-assembled quantum dots in high magnetic field (B). Due to hidden symmetries, the chemical potential of an N-exciton system at special B fields becomes insensitive to the exciton number as well as the magnetic field. This results in plateau regions of high intensity in measured magneto-PL spectrum. Theoretical calculations using exact diagonalization techniques successfully explain the measured magneto-photoluminescence spectrum with B fields up to 28 T. 相似文献
44.
V. Babin P. Bohacek E. Bender A. Krasnikov E. Mihokova M. Nikl N. Senguttuvan A. Stolovits Y. Usuki S. Zazubovich 《Radiation measurements》2004,38(4-6):533-537
Luminescence characteristics of a number of undoped and variously doped PbWO4 crystals were studied at 0.4–400 K by the time-resolved spectroscopy and compared with those of ZnWO4,CdWO4 and PbMoO4 crystals. Two types of green emission centres are detected in PbWO4 crystals. The centres of the first type are responsible for the low-temperature 2.3–2.4 eV emission observed under excitation around 3.90–3.95 eV. The structure and parameters of their relaxed excited states were determined. It was concluded that the origin of defects responsible for the green emission of the first type could vary for different crystals. The centres of the second type with the emission around 2.5 eV appear in crystals containing oxygen vacancies after the thermal destruction of Pb+-WO3 centres at T>180 K. Decomposition of the exciton and various defect-related states was also studied, and activation energies of this process were calculated. 相似文献
45.
K. L. Janssens B. Partoens F. M. Peeters 《Physica E: Low-dimensional Systems and Nanostructures》2004,21(2-4):349
We investigated theoretically the influence of strain on the exciton in both single and three vertically coupled self-assembled quantum dot systems in the presence of a perpendicular magnetic field. For the single disk, we find that the heavy-hole exciton is the ground state, while for the system of three stacked disks, the light hole state was found to be lower in energy. Results for the diamagnetic shift were compared with experimental results. 相似文献
46.
47.
J. Y. Lee J. H. Chang M. Yang H. S. Ahn S. N. Yi K. Goto K. Godo H. Makino M. W. Cho T. Yao J. S. Song 《Current Applied Physics》2004,4(6):611-614
Luminescence properties of CdTe/ZnSe fractional monolayer grown by atomic layer epitaxy have been investigated. To investigate the origin of the highly efficient luminescence, various optical spectroscopic methods such as, photoluminescence (PL), temporal/spatial resolved PL, temperature dependence PL, and excitation power dependence PL have been used. It is found that structural inhomogeneities affect dominant influence on the line width and line shape of luminescence. The luminescence intensity greatly enhanced by the localization of exciton at the disorder induced localized states. 相似文献
48.
聚合物电致发光材料研究进展 总被引:5,自引:0,他引:5
本文较详细地综述了聚合物电致发光材料的研究进展,重点介绍了聚对苯撑乙烯(PPV),并提出了有关聚合物电致发光材料及器件构造研究的一些观点。 相似文献
49.
A. Torrisi P. Horák J. Vacík A. Cannavò G. Ceccio J. Vaniš 《Phosphorus, sulfur, and silicon and the related elements》2020,195(11):932-935
AbstractOn the perspective to develop CuO–TiO2 MOS, multilayered Cu and Ti thin layers were alternatively deposited on silicon wafers using 25?keV Ar?+?ion beam sputtering and, subsequently, oxidized by thermal annealing in air at 400?°C for 24?h. The deposited films have variable ratios of the Cu and Ti % at. One of the main goal is to obtain such multilayers avoiding the presence of Cu–Ti–O compounds. The samples were characterized in terms of composition (by RBS and SIMS analyses) and morphology (by AFM and SEM investigations). In particular, SIMS maps allows to observe the spatial distribution and thickness of each phase of the Cu/Ti multilayers, and further to observe Cu diffusion and mixing with Ti, as well as phase separation of CuO and TiO2 in the samples. The reasons of this effect represent an open issue that has to investigated, in order to improve the MOS fabrication. 相似文献
50.