Method for modulating the wafer bow of free-standing GaN substrates via inductively coupled plasma etching

The bowing curvature of the free-standing GaN substrate significantly decreased almost linearly from 0.67 to 0.056 m⁻¹ (i.e. the bowing radius increased from 1.5 to 17.8 m) with increase in inductively coupled plasma (ICP) etching time at the N-polar face, and eventually changed the bowing direction from convex to concave. Furthermore, the influences of the bowing curvature on the measured full width at half maximum (FWHM) of high-resolution X-ray diffraction (HRXRD) in (0 0 2) reflection were also deduced, which reduced from 176.8 to 88.8 arcsec with increase in ICP etching time. Decrease in the nonhomogeneous distribution of threading dislocations and point defects as well as V_Ga–O_N complex defects on removing the GaN layer from N-polar face, which removed large amount of defects, was one of the reasons that improved the bowing of the free-standing GaN substrate. Another reason was the high aspect ratio of needle-like GaN that appeared at the N-polar face after ICP etching, which released the compressive strain of the free-standing GaN substrate. By doing so, crack-free and extremely flat free-standing GaN substrates with a bowing radius of 17.8 m could be obtained.     

Alpha particle absorption and inclined incidence track parameters evaluation in plastic detectors

In this work the use of our recently constructed irradiation chamber was involved in the current experiments. The absorption of alpha particle in air has been studied through a set of experiments in which the stopping power has been measured. A comparison between the calculated values and the present experimental results is given and a good agreement has been found. Critical angle (θ_c) determination has been carried out using two different techniques, via indirect and direct measurements, under different etching conditions and at various alpha energies. An empirical fit of θ_c−h (h is the removal thickness layer) dependence has been calculated and found to work well in the studied h ranges. Also, the inclined alpha tracks parameters of energies between 1.0 and 5.0 MeV have been studied. Results can be successfully applicable in alpha autoradiography studies and detector efficiency determination for track registration in plastic recorders.     

Evaluation of desorption activation energy of SiCl2 molecules

The chemical etching of silicon in Cl₂ ambient was considered. The desorption activation energy for an SiCl₂ molecule was evaluated using an experimentally measured dependence of etching rate on concentration of Cl₂ molecules. It was found that the desorption activation energy of SiCl₂ molecules is equal to E_d=(1.605±0.010) eV. This corresponds to a value of the mean lifetime of adsorbed molecules on the surface of τ=46 ms at temperature T=724 K.     

Coating properties of a novel water stationary phase in capillary supercritical fluid chromatography

The coating properties of a novel water stationary phase used in capillary supercritical fluid chromatography were investigated. The findings confirm that increasing the length or internal diameter of the type 316 stainless‐steel column used provides a linear increase in the volume of stationary phase present. Under normal operating conditions, results indicate that about 4.9 ± 0.5 μL/m of water phase is deposited uniformly inside of a typical 250 μm internal diameter 316 stainless‐steel column, which translates to an area coverage of about 6.3 ± 0.5 nL/mm² regardless of dimension. Efforts to increase the stationary phase volume present showed that etching the stainless‐steel capillary wall using hydrofluoric acid was very effective for this. For instance, after five etching cycles, this volume doubled inside of both the type 304 and the type 316 stainless‐steel columns examined. This in turn doubled analyte retention, while maintaining good peak shape and column efficiency. Overall, 316 stainless‐steel columns were more resistant to etching than 304 stainless‐steel columns. Results indicate that this approach could be useful to employ as a means of controlling the volume of water stationary phase that can be established inside of the stainless‐steel columns used with this supercritical fluid chromatography technique.     

衍射光学元件的反应离子束蚀刻研究

本文提出了一种制作衍射光学元件的新方法——-反应离子束蚀刻法.对此技术研究的结果表明:反应离子束蚀刻法具有高蚀刻速率、蚀刻过程各向异性好、蚀刻参数控制灵活等特点,对于衍射光学元件和微光学元件的精细结构制作十分有利.本文详细总结了反应离子束蚀刻过程中各工艺参数对蚀刻速率的影响,并在红外材料上制作了Dammann分束光栅.     

Diamond surface modification following thermal etching of Si supported hydrogenated diamond films by DBr

In this work, we study the modification of hydrogenated diamond films deposited on silicon resulting from its exposure to DBr followed by an annealing above 600 K, using high resolution electron energy loss spectroscopy (HREELS). This procedure results in silicon carbide SiC formation within the diamond film, as evidenced by the observation of a loss peak at 117 meV and its first harmonic at 233 meV in HREEL spectra. This diamond surface modification is interpreted as resulting from the reaction of products of the silicon support thermally activated etching with hydrogenated diamond.     

Radiation effects in calcite

Calcite single crystals on neutron bombardment change their colour to pale red, red and deep red, as the duration of irradiation increases. The irradiated surface becomes rugged and on etching, a large number of micropits are observed. Using Vicker’s hardness indenter, it is observed that the hardress of the irradiated crystal increases with the increase in the total dosage. From Laue x-ray diffraction studies of irradiated crystals, distortion of lattice is observed. Absorption spectra in the visible region show an extra peak for irradiated samples which is absent for radiated ones. The radiation effects are annealed to a considerable extent on heat treatment. The implications are discussed.     

硅衬底上纳米晶金刚石生长

研究了蚀刻气体对生长在硅衬底上纳米晶金刚石合成的影响.合成方法为热丝化学气相沉积法,衬底温度为550 oC,反应压力为4 kPa. 其中甲烷和氢气分别作为源气体和稀释气体. 氮气、氢气和氨气用作蚀刻气体. 结果表明,仅氢气作为蚀刻气体可获得最佳工艺条件.     

Surface studies on bimetallic thiocyanate ligand based single crystals of MnHg(SCN)4, CdHg(SCN)4 and ZnCd(SCN)4

Bimetallic SCN ligand based single crystals of manganese mercury thiocyanate (MMTC), cadmium mercury thiocyanate (CMTC) and zinc cadmium thiocyanate (ZCTC) are grown by slow solvent evaporation technique. The growth mechanism and surface features are investigated by optical microscopic techniques such as scanning electron microscopy (SEM) and atomic force microscopy (AFM). The laser induced surface damage measurements were carried out using a Q-switched Nd:YAG laser at 1064 nm with laser beam of 1.0 Hz and pulse duration 25 ps. The laser damage threshold values of MMTC, CMTC and ZCTC are found to be 15.9, 22.9 and 19.7 GW/cm², respectively. The SEM analysis of MMTC reveals the formation of elongated dendrite growth pattern caused by the fluctuations of Mn and Hg metal ligands when thiocyanate (SCN) bridges them. The etching study indicates the occurrence of different types of etch pit patterns like terraced triangles, pillars, pyramids and rods. The AFM images confirm the formation of three major hillocks with cavities in MMTC. The measured roughness values for CMTC crystal are very much lower than that of MMTC.     

Influence of external magnetic field on the etching of a steel ball in an aqueous solution of nitric acid

The effect of change of shape of a steel ball was revealed as a result of its etching in an aqueous solution of nitric acid under influence of an external magnetic field. The elongation of a ferromagnetic ball was observed along the direction of an external magnetic field while etching took place uniformly in all the directions without magnetic field application. The steel ball etching in a magnetic field is characterized by formation of three cylindrically symmetric regions with different etching rates and surface structures, divided from each other by clear borders (namely, the pole, equator and transition regions are formed). The non-monotone dependences of etching rate, surface structure of a sample and sample shape after etching on an external magnetic field are observed.