硅（100）晶面上硅和二氧化硅的横向与纵向腐蚀速率

定义了硅表面上硅和二氧化硅的横向腐蚀速率 ,系统地测量了硅 (10 0 )晶面上的硅和二氧化硅在 4 0 %(质量分数 )氟化铵水溶液中的横向与纵向腐蚀速率 ,并和硅 (111)晶面上的测量结果进行了对比 .对比结果表明 ,尽管两种晶面上的硅和二氧化硅的腐蚀速率有明显的差别 ,其相应的表观活化能在误差范围内相同 .实验中还发现 ,溶液的温度为 38.2℃时 ,硅腐蚀过程中形成的气泡对硅的腐蚀速率有显著的影响 :开始时加速硅的腐蚀 ;但随着气泡在硅 /溶液界面的聚集 ,阻碍硅的腐蚀 .     

Study of the etching characteristics of -mixed NaOH solution

In the present paper the effect of the presence of Na₂CO₃ on the etching characteristics of NaOH has been presented quantitatively. Six CR-39 detectors were etched at 50, 60 and in 6 M NaOH solutions containing 0%, 1%, 2%, 3%, 4% and 5% concentration of Na₂CO₃. Etching was performed in 22 steps of 5–10 min starting from 15 min up to 210 min. These detectors were previously exposed to ²⁵²Cf source. Lengths of 35 randomly selected fission fragment tracks were measured after each etching time interval. Similarly, diameters of 25 randomly selected fission fragments having 90 incidence angle were also measured as mentioned above. Track etch rate, bulk etch rate, etching efficiency and activation energies of both track as well as bulk etching have been determined.     

Formation model of bulk etching rate for polymer detectors

Any detector is composed of an enormous number of sensitive microscopic volumes (SMV) mainly in the state “NO” (Katz 1970. Unified Track Theory. In: Seventh International Colloquium on Corpuscular Photography and Visual Solid Detectors. Barcelona, pp. 1–29.). Irradiation evokes some spatial distribution of SMV in the state “Yes”. It can be described by the many-hit model of the SMV response (Ditlov, 1980. Theory of spatial calculation of primary action of d-electrons in track detectors with account of multiple scattering. In: Francois, H., et al. (Eds.), Solid State Nuclear Track Detectors. Pergamon Press, Oxford, pp. 131–141.). It appears that the process of etching can be described by its own many-hit model too, when the etching molecule attacks SMV in the state “Yes”. As a first our step of research, only the bulk rate V_b was considered.     

Combined AFM and Brewster-angle analysis of gradually etched ultrathin SiO2 - Comparison with SRPES results

Two surface sensitive techniques are employed to assess both structural and optical properties of an inhomogeneous Si(1 1 1)/silicon oxide multilayer system. Upon gradual etch-back of the native silicon oxide layer, structural changes of the respective interfaces were determined by contact-mode atomic force microscopy (CM-AFM); optical data were obtained by Brewster-angle analysis (BAA) at a single wavelength. It is shown, that the sensitivity of BAA leads to the identification of an additional strained sub-surface layer that was investigated by subsequent etching experiments and following optical analysis. Inclusion of this layer and its interfaces into a multilayer model allowed precise numerical evaluation of the respective oxide thicknesses in the range between 12 Å and 2 Å. These values, obtained by combination of BAA and AFM, are in excellent agreement with results obtained by synchrotron radiation photoelectron spectroscopy (SRPES). It is furthermore shown, that the thickness resolution limit of BAA (at constant nanotopographic roughness) is well below 1 Å. A limitation of BAA single-wavelength analysis is reached when the roughness variation, in terms of an effective layer and its thickness, exceeds the oxide thickness variation.     

Etch front roughening in wrinkly metal

Scaling behavior of wrinkle evolution due to chemical etching of Au on stretchable substrate is studied by atomic force microscopy. The surfaces were etched with a small drop of KI solution. Scaling exponent α decreased with the etch time, from 0.93 to 0.62. For dynamic exponent β up to 30 min we find it to be 0.16 ± 0.05. Within the same time frame, the wavelength increases as ∼t^0.23+−0.05 but drops at 45 min as ∼t^{−1.22+−0.42} and saturates. At this stage, we observe percolation island type features along with some wrinkles. The measured value of α at this stage is 0.62 ± 0.02; consistent with the percolation model. The wavelength coarsening at this stage suggests the existence of chemically driven spinodal decomposition. Our obtained value of α and β is consistent with the value of z obtained from correlation length which is given by ξ = t^1/z. We find z = 4.87 ± 0.50. Our experiment suggests wrinkle formation in thin films on viscoelastic surface occurs in three stages.     

Competitive effects of metal dissolution and passivation modulated by surface structure: An AFM and EBSD study of the corrosion of alloy 22

Electron backscatter diffraction (EBSD) and atomic force microscopy (AFM) are used to correlate crystallographic grain orientation with corrosion rates of polycrystalline alloy 22 following immersion in 1 and 3 molar (M) hydrochloric acid. For each acid concentration, relative corrosion rates are simultaneously characterized for approximately 50 unique grain orientations. The results demonstrate that the corrosion rate anisotropies are markedly different in the two acid concentrations. In very aggressive acidic environments (3M HCl), where electrochemical impedance spectroscopy and spectroscopic ellipsometry data demonstrate that the passive oxide film of alloy 22 is completely dissolved, alloy dissolution rates scale inversely with the average coordination number of surface atoms for a given grain orientation, where highly correlated surfaces dissolve the slowest. Thus, similar to simple metallic systems, the corrosion rates scale with the surface plane-normal crystallographic orientations as {1 1 1} < {1 0 0} < {1 1 0}. Less intuitively, in milder corrosive environments (1M HCl), where the passive film of the alloy is still intact, the dissolution does not scale inversely with surface atomic density. Rather, corrosion rates scale with crystallographic orientations as {1 1 1} < {1 1 0} < {1 0 0}. This is attributed to the fact that facets most susceptible to corrosion (least coordinated) are also the most able to form protective oxides, so that the dissolution anisotropy is a result of the delicate balance between metal dissolution and oxide growth.     

Evaluation of GaN and In0.2Ga0.8N Semiconductors as Potentiometric Anion Selective Electrodes

The response of potentiometric anion selective electrodes consisting of undoped GaN or In_0.2Ga_0.8N films grown on Al₂O₃ (sapphire) was measured in electrolyte solutions of F^?, NO₃^?, Cl^?, SCN^?, ClO₄^? or Br^? anions at concentrations ranging from 10^?6 to 10^?1 M. The slope of the linear regions varied between ?32.8 and ?51.9 mV/decade for the GaN electrode and between ?31.0 and ?72.0 mV/decade for the In_0.2Ga_0.8N electrode. The drift of the GaN electrode reached 1.57 mV/day in KNO₃ solutions, whereas the drift of the In_0.2Ga_0.8N electrode could not be evaluated due to large drops in the slope of its linear range over time. Both electrodes were sensitive to pH variations over the pH range from 12.8 to 1.3. The GaN electrode surface could be electrochemically etched under anodic polarization; however, both GaN and In_0.2Ga_0.8N electrodes remained chemically stable and mechanically intact under open circuit conditions even after prolonged use.     

Electrodeposition of microstructures using a patterned anode

In this paper we report the transfer of micro-scale patterns by electrodeposition on to substrates without requiring them to be coated with a photoresist mask. This approach makes uses of a patterned tool which is placed in close proximity to the substrate in an electrochemical reactor. With an appropriate choice of electrochemical parameters, electrodeposition can be confined to regions corresponding to the exposed regions of the tool. Experiments indicate that the electrodeposition of copper features on to conductive substrates is possible using this approach. Copper lines of 100 μm width have been successfully replicated, but with some increase in dimension due to current spreading. This effect can be minimised by reducing the inter-electrode gap and employing an electrolyte with a low conductivity. It is also demonstrated that the tool can be used to pattern multiple substrates.     

Surface roughness analysis of hydrophilic SiO2/TiO2/glass nano bilayers by the level crossing approach

The effect of etching time on the statistical properties of hydrophilic surfaces of SiO₂/TiO₂/glass nano bilayers has been studied using atomic force microscopy (AFM) and a stochastic approach based on a level crossing analysis. We have created rough surfaces of the hydrophilic SiO₂/TiO₂ nano bilayer system by using 26% potassium hydroxide (KOH) solution. Measuring the average apparent contact angle allowed us to assess the degree of hydrophilicity, and the optimum condition was determined to be 10 min etching time. A level crossing analysis based on AFM images provided deeper insight into the microscopic details of the surface topography. With different etching times, it has been shown that the average frequency of visiting a height with positive slope behaves in a Gaussian manner for heights near the mean value and obeys a power law for heights far away from the mean value. Finally, by applying the generalized total number of crossings with positive slope, it was found that the both high heights and deep valleys of the surface have a great effect on the hydrophilic degree of the SiO₂/TiO₂/glass nano bilayer investigated system.