测量行波管电子注的法拉第筒的热分析

利用ANSYS软件对测量行波管电子注截面的法拉第筒探头进行了热分析研究.分析了在单脉冲情况下,测量各种直径的不同脉冲功率密度的电子注、不同脉冲宽度对法拉第筒温度的影响,研究了测量不同功率密度的电子注可以使用的脉冲宽度.结果表明,仅法拉第筒上的注斑区域温度迅速上升,温度梯度较大,其它部分温度基本不变,为保证法拉第筒能够持...     

基于发射光谱的DF激光器光腔温度与粒子数分布

 建立了谱线增益系数与温度、粒子数分布之间及谱线增益系数与谱线强度之间的关系式,对一台燃烧驱动DF激光器的发射光谱进行了测量,利用发射光谱数据计算得到光腔温度为381.4 K,分布在振动态能级1与0,振动能级2与1,振动能级3与2的粒子数之比分别为0.60～0.62, 0.676 4, 0.71～0.74。     

超导滤波器制作与可靠性初步试验

介绍了高温超导滤波器薄膜电极与同轴转接器用金带连接技术,得到了较高的性能指标,所制作滤波器带内回波损耗<-21dB.并将金带连接效果的仿真指标与实测结果作了对比,指标一致性较好.所制超导滤波器顺利通过振动冲击试验,表明器件具备一定的可靠性.     

组合曲线回归法计算螺旋扁管管内对流传热系数

针对螺旋扁管壁面温度难于准确测试的特点,提出采用线性曲线回归与非线性曲线回归相结合的方法进行管内传热系数计算.进行了光管与螺旋扁管管内对流传热实验,并用该方法计算管内对流传热系数.光管传热系数计算值与经典公式的大偏差小于6%.螺旋扁管管内传热系数的计算值略大于通过测量壁温获得的传热系数值,分析了二者存在差异的原因.组合...     

高温超导磁通跳跃过程中的磁致伸缩效应

文中基于超导磁通动力学理论,考虑电磁力与热激活对磁通运动的影响,基本模型包括由等效电阻率随超导体温度和磁场变化的磁通扩散方程,以及比热随超导体温度变化的热传导方程组成.在此基础上,用数值方法求解了这组非线性磁热耦合方程,主要研究了有磁通跳跃状发生状态时环境温度和外磁场速度对于高温超导磁致伸缩的影响.结果表明:磁通进入超...     

基于新型MRTD模型研究扫描型红外热像仪的视距

 基于人眼视觉系统可感知的阈值信噪比,提出预测红外热像仪最小可分辨温差（MRTD）方法。该方法根据频谱理论和红外热成像系统的二维调制传递函数,并结合匹配滤波器的概念,描述4条带标准靶的空间频谱函数。利用此空间频谱函数研究了4条带标准靶经过红外热成像系统的调制传递之后人眼视觉系统的感知信噪比。基于人眼视觉系统可感知的阈值信噪比,建立一个新的MRTD模型。依据此MRTD模型和视距模型,实现红外热像仪视距的预测。仿真结果表明,该方法预测的视距与实验数据有很好的一致性。     

光纤光谱仪绝对光谱辐射定标新技术

在700 nm～900 nm波段范围内,用1 000℃黑体标定光纤光谱仪(200 nm～1 100 nm),获得其在该波段范围内的绝对光谱响应函数.通过测量光纤光谱仪对不同色温下卤钨灯的光谱响应,将700 nm～900 nm波段的响应函数推延至400 nm～700 nm波段范围,最终得到400 nm～900 nm波段内的绝对光谱响应函数.光纤光谱仪对不同色温下卤钨灯的5次测量结果表明:在550 nm～900 nm范围内,所获得的绝对光谱响应合成不确定度小于3.53%.     

连续激光辐照锗材料损伤的数值模拟研究

 以热传导理论和热弹应力理论为基础,建立了连续平顶激光辐照锗材料的二维非稳态物理模型。对受辐照锗材料的热-力场分布进行数值模拟,比较了激光辐照时间对靶材热-力场分布的影响,探讨了温度场及应力场空间梯度随半径的分布以及激光辐照时间对热-力场空间梯度的影响。计算结果表明,靶材中心温升效应最大,而应力最大值出现在光斑半径外侧;光斑边缘处温度场和应力场梯度绝对值均达到最大,随着辐照时间的延长,材料同一点温度场和应力场梯度均增大。在给定条件下,计算了靶材的损伤时间,应力损伤域值最先达到。     

Growth of gem-grade nitrogen-doped diamond crystals heavily doped with the addition of Ba（N3）2

Additive Ba(N 3) 2 as a source of nitrogen is heavily doped into the graphite-Fe-based alloy system to grow nitrogendoped diamond crystals under a relatively high pressure (about 6.0 GPa) by employing the temperature gradient method.Gem-grade diamond crystal with a size of around 5 mm and a nitrogen concentration of about 1173 ppm is successfully synthesised for the first time under high pressure and high temperature in a China-type cubic anvil highpressure apparatus.The growth habit of diamond crystal under the environment with high degree of nitrogen doping is investigated.It is found that the morphologies of heavily nitrogen-doped diamond crystals are all of octahedral shape dominated by {111} facets.The effects of temperature and duration on nitrogen concentration and form are explored by infrared absorption spectra.The results indicate that nitrogen impurity is present in diamond predominantly in the dispersed form accompanied by aggregated form,and the aggregated nitrogen concentration in diamond increases with temperature and duration.In addition,it is indicated that nitrogen donors are more easily incorporated into growing crystals at higher temperature.Strains in nitrogen-doped diamond crystal are characterized by micro-Raman spectroscopy.Measurement results demonstrate that the undoped diamond crystals exhibit the compressive stress,whereas diamond crystals heavily doped with the addition of Ba(N 3) 2 display the tensile stress.     

A1/Ti/4H-SiC Schottky barrier diodes with inhomogeneous barrier heights

This paper investigates the current-voltage （I-V） characteristics of Al/Ti/4H-SiC Schottky barrier diodes （SBDs） in the temperature range of 77 K-500 K, which shows that Al/Ti/4H SiC SBDs have good rectifying behaviour. An abnormal behaviour, in which the zero bias barrier height decreases while the ideality factor increases with decreasing temperature （T）, has been successfully interpreted by using thermionic emission theory with Gaussian distribution of the barrier heights due to the inhomogeneous barrier height at the A1/Ti/4H-SiC interface. The effective Richardson constant A＊ = 154 A/cm2 . K2 is determined by means of a modified Richardson plot In（I0/T2） - （qσ）2/2（κT）2 versus q/kT, which is very close to the theoretical value 146 A/cm2 · K2.