1 MeV电子辐照对短波Hg1-xCdxTe光伏探测器的影响

 研究了1 MeV电子辐照对短波Hg_1-xCd_xTe光伏探测器的影响。通过测试电子辐照前后光伏探测器的响应光谱、信号、噪声、暗电流等性能参数，分析了电子辐照对Hg_xCdxTe光伏器件的影响机制。实验结果发现：电子辐照后器件响应光谱在短波处有变窄的趋势，但响应峰值波长和截止波长基本无变化；随着辐照剂量的增加，通过p-n结的暗电流有所增加，光伏器件的探测率有减小的趋势。     

Low temperature transport properties of thin SOI MOSFETs

Fabrication and 4.2 K mobility measurements of silicon-on-insulator (SOI) metal–oxide-field-effect-transistors are reported. The three sets of samples fabricated in this work include devices for which the SOI film thicknesses (t_SOI) are in the ranges of 10–15, 16–19 and 56–61 nm. The peak mobility of the devices that have the SOI film thickness above 16.5 nm is 1.9 m²/V s. The set of devices with thinnest channel (t_SOI=10–15 nm) suggest that the peak mobility decreases with decreasing t_SOI.     

Interferometric Hetero-Detector Phase Measurement

We present a new method for the measurement of the phase of ultrashort optical pulses with high spectral resolution. This employs an interferometer with a monochromator in one arm. Two detectors operating in single photon and two-photon absorption regimes monitor the output from the interferometer. Comparison of the signals from the two detectors gives a measurement of the phase of the light pulse. The principles underpinning this technique are discussed and the experimental application to picosecond pulses is demonstrated.     

时滞Lurie系统的绝对稳定性准则

本文用频率法研究Luire系统的绝对稳定性，得到了系统在小时滞和全时滞情形的绝对稳定性判据．     

THEORY AND APPLICATIONS OF FREQUENCYMETRIC TITRATION

Theory on frequencymetric titration has been proposed based on equivalent circuit of piezoelectric quartz crystal (PQC) in liquid and oscillation equation of TTL-PQC oscillator, and the theoretical equation derived representing the frequency shift with respect to the solution conductivity. Practical examples of various types of titration are given in this paper.     

极性晶体中表面磁极化子的温度依赖性

本文讨论电子和体纵光学声子耦合弱,与表面光学声子耦合强时对表面磁极化子的温度特性的影响,用线性组合算符法研究表面磁极化子的振动频率和诱生势的温度依赖性.对AgCl晶体进行了数值计算.结果表明,极化子的振动频率和诱生势随温度的升高而减小.     

Steps, ledges and kinks on the surfaces of platinum nanoparticles of different shapes

Platinum nanoparticles with a high percentage of cubic-, tetrahedral- and octahedral-like shapes, respectively, have been synthesized by a shape-controlling technique that we developed recently [Ahmadi et al., Science 272 (June 1996) 1924]. High resolution transmission electron microscopy (HRTEM) is used here to directly image the atomic scale structures of the surfaces of these particles with different shapes. The truncated shapes of these particles are mainly defined by the {100}, {111}, and {110} facets, on which numerous atom-high surface steps, ledges and kinds have been observed. This atomic-scale fine structure of the surfaces of these particles is expected to play a critical role in their catalytic activity and selectivity.     

Experimental confirmation by galvanomagnetic methods of a complex transport model in In0.53Ga0.47As layers deposited by MBE on SI-InP

At low temperatures In_0.53Ga_0.47As samples show an increase of carrier concentration, which can be explained in terms of a two carriers transport model. This type of problem exists since the beginning of the semiconductor era, dating back to monocrystalline germanium.We propose that in all the investigated layers, there are X atoms or charged dislocations in the region of the first monolayers, which are built in during epitaxial growth. The layers were intentionally undoped. They form an impurity band in which low mobility carriers dominate over the localised electron scattering due to the s-d exchange interaction. These carriers do not freeze out at liquid helium temperature and give rise to two transport media for electrons; a conduction band at higher temperatures and an impurity band at lower temperatures. The electron which fall down onto the previously ionised X atoms, then move by thermally activated hopping. We show that the two carriers model for In_0.53Ga_0.47As epitaxial layers are confirmed by the carrier concentration-temperature, carrier concentration-magnetic field, resistivity-magnetic field behaviour, and also by YKA theory also. The differences between the two transport models are so distinctive that observed phenomena may exist. This paper presents experimental results, which constitute comprehensive evidence for the complicated structure of the semiconductor epitaxial layers on the sample of n-type In_0.53Ga_0.47As/InP layer with n=2.2×10¹⁵/cm³.     

石英玻璃的非线性极化及其光学测量

本文报道了石英玻璃的非线性极化及其光学测量的全过程。研究了外电场对极化样品二阶大线性的影响。并用铁电极化模型作了一些理论分析。     

Acousto-optic modulation in magnetised diffusive semiconductors

The modulation of an intense electromagnetic beam induced by the acousto-optic (AO) effect has been analysed in a transversely magnetised semiconductor-plasma medium. The effect of carrier diffusion on the threshold field and gain profile of the modulated wave has been extremely investigated using coupled mode theory. The origin of the AO interaction is assumed to lie in the induced nonlinear diffusion current density of the medium. By considering the modulation process as a four wave parametric interaction an expression for effective third-order AO susceptibility describing the phenomena has been deduced. The modulation is greatly modified by propagation characteristics such as dispersion and diffraction due to dielectric relaxation of the acoustic mode. The threshold pump field and the steady state growth rates are estimated from the effective third-order polarisation in the plasma medium. Analytical estimation reveals that in the presence of enhanced diffusion due to excess charge carriers the modulated beam can be effectively amplified in a dispersionless acoustic wave regime. The presence of an external dc magnetic field is found to be favourable for the onset of diffusion induced modulational amplification of the modulated wave in heavily doped regime. Received 5 November 2001