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71.
A novel process comprising the UV‐induced photografting of styrene into poly(tetrafluoroethylene) (PTFE) films and subsequent sulfonation has been developed for preparing proton‐conducting membranes. Although under UV irradiation the initial radicals were mainly generated on the surface of the PTFE films by the action of photosensitizers such as xanthone and benzoyl peroxide, the graft chains were readily propagated into the PTFE films. The sulfonation of the grafted films was performed in a chlorosulfonic acid solution. Fourier transform infrared and scanning electron microscopy were used to characterize the grafted and sulfonated membranes. With a view to use in fuel cells, the proton conductivity, water uptake, and mechanical properties of the prepared membranes were measured. Even through the degree of grafting was lower than 10%, the proton conductivity in the thickness direction of the newly prepared membranes could reach a value similar to that of a Nafion membrane. In comparison with γ‐ray radiation grafting, UV‐induced photografting is very simple and safe and is less damaging to the membranes because significant degradation of the PTFE main chains can be avoided. © 2007 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 45: 2624–2637, 2007  相似文献   
72.
The possibilities of controlling the laser beam properties by a deformable mirror introduced into the laser optical cavity were studied theoretically and experimentally. The experiments were performed under conditions of an industrial high power transverse flow cw CO2 laser operating with a stable resonator of a folded configuration. A deformable bimorph mirror of a surface profile controlled by the voltage applied to the mirror electrodes is implemented to the laser system as a back cavity mirror or as a one of the inner folding mirrors. The near-and far-field characteristics of the laser beam versus the resonator configuration controlled by the changes of the focal length of the deformable mirror are discussed in the paper. The analysis reveals that the resonator with an inner deformable mirror is much more sensitive to the mirror curvature variations than the resonator in which the deformable mirror is used as a back cavity mirror. The presented results show that dynamic and controllable changes in the resonator properties result in the controlled modification and optimisation of the laser output power and spatial parameters of the laser radiation.  相似文献   
73.
王书鸿  王九庆  叶强  乐琪 《中国物理 C》2002,26(12):1302-1308
为获得尽可能高的正电子(e+)产额,严格控制初级电子(e)束在e+产生靶上的束半径是至关重要的.首先分析了使e束半径增大的各因素和对这些因素的制约;然后以北京正负电子对撞机(BEPC)的正电子源为例,给出了束半径的实测值和计算值的比较,以具体说明这些因素的影响;最后讨论了北京正负电子对撞机二期工程(BEPC-Ⅱ)的相应优化设计研究,提出了获得靶上最小束半径的若干途径.  相似文献   
74.
报道了N+离子轰击产生的氮化硼(BN)纳米结构,及在电子辐照时结构演化的高分辨透射电子显微镜的原位测定结果.应当强调的是,这种类富勒烯和发夹结构的演化,实际上是电子辐照诱发固态相变的发展,观察中发现的一些BN颗粒、卷曲物,可以被认为是类富勒烯等纳米结构形成的前体或早期阶段.提出了一种类富勒烯等结构的电子辐照动力学模型,并进行了讨论. 关键词: 氮化硼 电子辐照 透射电子显微镜 氮化硼纳米形成物  相似文献   
75.
We have computed electronic structures and total energies of circularly confined two-dimensional quantum dots and their lateral dimers in zero and finite uniform external magnetic fields using different theoretical schemes: the spin-density-functional theory (SDFT), the current-and-spin-density-functional theory (CSDFT), and the variational quantum Monte Carlo (VMC) method. The SDFT and CSDFT calculations employ a recently-developed, symmetry-unrestricted real-space algorithm allowing solutions which break the spin symmetry. Results obtained for a six-electron dot in the weak confinement limit and in zero magnetic field as well as in a moderate confinement and in finite magnetic fields enable us to draw conclusions about the reliability of the more approximative SDFT and CSDFT schemes in comparison with the VMC method. The same is true for results obtained for the two-electron quantum dot dimer as a function of inter-dot distance. The structure and role of the symmetry-breaking solutions appearing in the SDFT and CSDFT calculations for the above systems are discussed. Received 16 October 2001 and Received in final form 17 January 2002  相似文献   
76.
T. Bernhard 《Surface science》2006,600(9):1877-1883
The structure and magnetism of thin epitaxial Fe layers grown on Cu(0 0 1) is investigated by grazing scattering of fast H and He atoms. Information on the atomic structure of the film and substrate surfaces is obtained by making use of ion beam triangulation with protons. The magnetic behavior is studied via the polarization of light emitted after capture of spin-polarized electrons into excited atomic terms during scattering of He atoms. For the formation of bcc(1 1 0)-like Fe films at higher coverages, we detect differences in structural and magnetic properties for room and low temperature growth. We suggest that the crystalline structure depends on the film morphology and that Cu impurities affect the magnetic properties.  相似文献   
77.
Based on the extended Huygens-Fresnel principle, the spectrum of Gaussian Schell-model (GSM) beams propagating through turbulent atmosphere is derived analytically. It is shown that, if the scaling law is valid, the normalized spectrum S(ω) of GSM beams propagating through turbulent atmosphere is the same as the normalized source spectrum S(0)(ω), whether GSM source is quasi-homogenous or not. On the other hand, if the scaling law fails, S(ω) of GSM is different from S(0)(ω). The structure constant of the refractive index, transverse coordinate of observation point and spatial correlation length of the source affect the spectrum, which is illustrated numerically.  相似文献   
78.
对Sn-C60薄膜进行紫外可见光吸收,X-射线衍射和扫描电镜的测定结果显示,薄膜样品紫外可见光吸收的两个短波段吸收峰比纯C60薄膜的吸收峰显著下降,说明Sn-C60薄膜的电子光吸收跃迁为间接跃迁,能带中有杂质能级的存在;样品的X射线衍射峰则对应于面心立方结构;扫描电镜结果显示薄膜为纳米级颗粒组成。  相似文献   
79.
Monte Carlo方法研究低能电子束曝光沉积能分布规律   总被引:4,自引:0,他引:4       下载免费PDF全文
建立一个描述低能电子在多元多层介质中散射的物理模型,运用MonteCarlo方法模拟低能电子在靶体胶衬底中的复杂散射过程,在此基础上通过大量计算研究入射束能、胶层厚度、衬底材料等不同曝光条件对抗蚀剂沉积能密度分布的影响,获得沉积能分布规律:适量的低束能、薄胶层、低原子序数衬底可以使前散射电子对胶中沉积能密度分布的贡献增大、背散射电子的贡献减小,从而提高曝光分辨率. 关键词: 电子束曝光 MonteCarlo方法 低能电子散射 能量沉积  相似文献   
80.
Tesla变压器型电子束加速器初步实验   总被引:9,自引:9,他引:0       下载免费PDF全文
 介绍了一种Tesla变压器型的强流电子束加速器。当变压器初级输入20kV左右的电压时,加速器二极管输出电压500kV,电流9kA,信号脉宽大约50ns,该装置具有结构简单,安装方便,运行可靠等特点。  相似文献   
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