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31.
Zeolites are widely used in many commercial processes, mostly as catalysts or adsorbents. Understanding their intimate structure at the nanoscale is the key to control their properties and design the best materials for their ever increasing uses. Herein, we report a new and controllable fluoride treatment for the non‐discriminate extraction of zeolite framework cations. This sheds new light on the sub‐structure of commercially relevant zeolite crystals: they are segmented along defect zones exposing numerous nanometer‐sized crystalline domains, separated by low‐angle boundaries, in what were apparent single‐crystals. The concentration, morphology, and distribution of such domains analyzed by electron tomography indicate that this is a common phenomenon in zeolites, independent of their structure and chemical composition. This is a milestone to better understand their growth mechanism and rationally design superior catalysts and adsorbents.  相似文献   
32.
以2-巯基苯并噻唑(2-MBT)、 苯并三氮唑(BTA)和苯氧基乙醇(MSDS)作为缓蚀剂, 研究了其加入在酸性蚀刻液后对PCB厚铜线路的缓蚀效果。通过接触角测试、电化学测试和蚀刻因子得出缓蚀状态,并结合扫描电子显微镜观察铜表面形貌。通过分子动力学计算和量子化学模拟分析缓蚀剂在铜表面的吸附机理。结果表明,2-MBT + MSDS与BTA + MSDS的分子结构可有效地平行吸附在铜表面,且吸附能高于单一缓蚀剂。加入了2-MBT + MSDS的蚀刻液,对厚度约为33 μm铜线路进行刻蚀,铜线路的蚀刻因子提高到6.59,可有效应用于PCB厚铜线路制作。  相似文献   
33.
用实验方法测量了光纤探针的传输效率随光纤圆锥角的变化关系,给出了传输效率曲线。通过测定探针传输效率的实验可以看到,只要光纤探针的锥角在30°~55°范围内,就具有高透过率、高分辨率纳米微探针。测量了传输效率与光波波长的关系。  相似文献   
34.
组合刻蚀法制备窄带滤光片列阵   总被引:4,自引:0,他引:4  
介绍了组合刻蚀法制备窄带滤光片列阵的基本原理和制备工艺,这是一种效率非常高的制备方法,只需N次刻蚀就可以完成2N通道窄带滤光片列阵的制备,而且可以用于制备不同波段窄带滤光片列阵。展示了可见-近红外波段32通道窄带滤光片列阵和中红外波段16通道窄带滤光片列阵的实验结果,其中32通道窄带滤光片列阵的带通峰位基本呈线性分布在774.7~814.2 nm之间,所有滤光片的半峰全宽都非常窄(δλ<1.5 nm),相应于δλ/λ<0.2%,半峰全宽最窄的滤光片达到0.8 nm,相应于δλ/λ<0.1%,其带通峰位λ=794.3 nm;各通道的带通透过率在21.2%~32.4%之间,大部分在30%左右。  相似文献   
35.
国家同步辐射实验室新建了覆盖5~40 eV的低能区高分辨率角分辨光电子能谱光束线.其球面光栅单色仪包含了三块光栅,即300,600和1200 line/mm球面层式(Laminar)光栅.采用全息离子束刻蚀工艺,在硅光栅基片上成功地刻蚀出1200 line/mm、占空比0.35、槽深35 nm、有效刻划面积大于120 ...  相似文献   
36.
高功率垂直腔面发射激光器的湿法腐蚀工艺   总被引:1,自引:2,他引:1       下载免费PDF全文
为提高高功率垂直腔面发射激光器(VCSEL)光电性能,对氧化限制型高功率VCSEL湿法腐蚀工艺进行了实验研究。实验中采用H3PO4系溶液替代以往制备此类器件常用的H2SO4系溶液作为高功率VCSEL外延片的腐蚀液,利用扫描电镜(SEM)研究了腐蚀后外延片氧化窗口的腐蚀形貌变化与腐蚀液浓度的关系,消除了以往采用H2SO4系溶液腐蚀时,高功率VCSEL氧化层侧壁出现的"燕尾"结构;通过改变湿法腐蚀工艺的外部温度条件和腐蚀液的浓度配比,实验研究了高功率VCSEL湿法腐蚀速率规律,最后得出了制备高功率VCSEL时湿法腐蚀工艺的最佳外部温度条件与腐蚀液的最佳浓度配比。  相似文献   
37.
介绍了一种利用激光干涉光刻技术得到特征图形,并通过离子束刻蚀将图形转移到铬层上,从而获得掩模的方法。针对掩模透光率以及对干涉图形对比度可能产生影响的两个参数分别进行了数值仿真,从而证明此方法的可行性和参数的优化选择。自搭干涉光刻实验系统,用257 nm的激光光源实现光刻,得到特征尺寸为100 nm的图形,再经过离子束刻蚀,最终得到周期200 nm、线宽100 nm的掩模。  相似文献   
38.
电化学刻蚀法制备LaB6场发射微尖锥阵列   总被引:2,自引:1,他引:2       下载免费PDF全文
采用电化学刻蚀方法,成功制备出单尖的六硼化镧、钼、钨及钨铼合金场发射冷阴极尖锥,并对这几种场发射单尖锥阴极的电子发射性能进行了测试比较.结果表明,LaB6作为场发射阴极,具有良好的发射性能和稳定性.在〈111〉面单晶LaB6基片上,用PECVD法沉积非晶硅作掩膜,制备出具有一定高度的LaB6微尖锥场发射阵列,结果发现,LaB6基底较为平整,尖锥阵列呈现出各向异性.该结论对LaB6材料在场发射阴极方面的进一步研究具有重要的指导意义.  相似文献   
39.
The etching conditions of an indigenously prepared thin film of pentaerythritol tetrakis(allyl carbonate) (PETAC) were standardised for the use as a nuclear track detector. The optimum etching times in 6?N NaOH at 70°C for the appearance of fission and alpha tracks recorded in this detector from a 252Cf solid source were found to be 30 min and 1.50?h, respectively. The experimentally determined values for the bulk and track-etch rates for this detector in 6?N NaOH at 70°C were found to be 1.7?±?0.1 and 88.4?±?10.7?µm/h, respectively. From these results, the important track etching properties such as the critical angle of etching, the sensitivity and the fission track registration efficiency were calculated and compared with the commercially available detectors. The activation energy value for bulk etching calculated by applying Arrhenius equation to the bulk etch rates of the detector determined at different etching temperatures was found to be 0.86?±?0.02?eV. This compares very well with the value of about 1.0?eV reported for most commonly used track detectors. The effects of gamma irradiation on this new detector in the dose range of 200–1000?kGy have also been studied using bulk etch rate technique. The activation energy values for bulk etching calculated from bulk etch rates measurements at different temperatures were found to decrease with the increase in gamma dose indicating scission of the detector due to gamma irradiation. The optical band gap of this detector was also determined using UV–visible spectrometry and the value was found to be 4.37?±?0.05?eV.  相似文献   
40.
In this study, effect of lanthanum substitution on the phase composition, lattice parameters and magnetic properties of barium hexaferrite has been studied in samples synthesized in ammonium nitrate melt. Samples, prepared with different lanthanum amount and having various initial Fe/(Ba+La) ratios in between 12 and 2 {(Ba1−xLaxn Fe2O3, where 0≤x≤1 and 1≤n≤6)}, are sintered at temperatures from 800 to 1200 °C. The lattice parameters, both a and c, decreases with increasing La amount which results in a decrease of the unit cell volume. The scanning electron microscope micrographs show that the pure and La-substituted sample with x=0.3, both calcinated at 1000 °C, have grain sizes smaller than 1 μm. The coercivities of the La-substituted samples increase with increasing La amount and reaches to a maximum value of 5.73 kOe, when x=0.3. Sintering at higher temperatures (above 1000 °C) decreases the coercivity, resembling a transition from single to multi-domain behavior of the particles, while saturation magnetization of the samples continues to increase due to the increasing grain size. Magnetization measurements of the samples prepared with different Fe/(Ba+La) molar ratios, n's, revealed that the specific saturation magnetization slightly increases with decreasing n, while coercivities fluctuates around 5.5 kOe. However, a sharp increase in the saturation magnetization has been observed in the sample having n=1 and washed in HCl. It was measured as 59.2 emu/g at 15 kOe, which is higher than that of the pure sample (57.5 emu/g). Thus, the magnetic parameters are optimized in the sample Ba0.7La0.3Fe12O19 so as to maximize both coercivity and specific saturation magnetization in the HCl-washed sample synthesized by starting with an unusually low Fe/(Ba+La) molar ratio of 2 (or n=1).  相似文献   
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