铕配合物Eu( UVA)3Phen与PVK掺杂体系发光特性的研究

将一种新型稀土铕配合物Eu(UVA)3 Phen作为掺杂剂与基质PVK按不同质量比进行掺杂,对混合薄膜的光致发光(PL)和电致发光(EL)特性进行了研究.实验结果表明,共掺杂体系中存在从PVK到Eu(UVA)3 Phen的F(o)rster能量传递.通过优化主客体材料的配比浓度,当掺杂浓度为4％时,得到了色纯度较好地红...     

Synthesis and Characteristics of Hole-transporting Materials Based on Biphenyl Diamine Derivatives with Carbazole Groups

IntroductionThe development of organic light-emitting diodes(OLEDs)has been the subject of intensive academicand industrial research that is directed toward the fabri-cation of large-area,monocolor and full color flat-paneldisplays[1].Ever since Tanget al…     

Preparation,characterization and electroluminescence studies of copper doped zinc sulfide nanocrystals

Copper doped zinc sulfide nanoparticles were prepared by chemical precipitation method. The size of the particles was varied by changing the concentration of capping agent. The XRD studies indicate that most of the samples are cubic in nature. The broadening of peaks tends to increase with increasing capping agent concentration showing decrease in particle size. The crystalline size computed using Scherrer formula is found to be in range of 3–10 nm. Absorption spectra show absorption edge in UV region. The edge was found to shift towards shorter wavelength as the capping agent concentration is increased. This indicates increased effective band gap and hence reduced particle size. The nanoparticle size has been estimated in the range 5–10 nm using effective mass approximation model. For electroluminescence (EL) study of ZnS:Cu nanocrystals, the EL cells were prepared by placing ZnS:Cu nanoparticles between SnO₂ coated conducting glass plate and aluminum foil. Alternating voltage of various frequencies was applied and EL brightness (B) at different voltages (V) was measured and reported in this paper.     

ZnO纳米棒／MEH-PPV异质结的复合电致隧穿发光

利用低温水热法生长的ZnO纳米棒（ZnO-NRs）,和p型有机半导体材料聚[2-甲氧基-5-（2-乙基己氧基）-1,4-苯撑乙烯撑]（MEH-PPV）复合制备了结构为“ITO/ZnO晶种/ZnO-NRs/MEH-PPV/Al”的发光器件。测试结果发现,该器件具有非常好的二极管整流特性。对ZnO-NRs/M EH-PPV异质结施加超过17 V的反向偏压时,可同时获得两种半导体材料的发光,且ZnO近紫外光（380 nm ）发射强度远大于 M EH-PPV的红橙光强度,发光功率随着反向偏压的增加迅速增强,然而施加正向偏压时未探测到发光。该器件的发光机理不同于其他文献报道的正偏压发光,而属于反偏压发光器件,其发光机理归因于有机无机复合异质结的界面特殊性和ZnO-NRs的纳米尺寸效应,反偏压下器件实现的是载流子隧穿发光,而正偏压时载流子以表面态的无辐射复合及漏电流方式消耗。     

1.54 μm Light emission from Er/O and Er/F doped Si p–i–n diodes grown by molecular beam epitaxy

Various light emitting devices (LED) have been processed using Er/O- and Er/F-doped Si layered structures grown by molecular beam epitaxy (MBE) at low temperature. A comparative study has been carried out in order to provide more understanding of the electroluminescence (EL) excitation and de-excitation mechanisms in particular at a high injection current regime. Comparing the experimental results with model calculations the values of excitation cross section, σ_ex, and effective Auger coefficient, C_A, have been determined for various devices operated at different biases. Time-resolved EL measurements of these Er/O- and Er/F-doped MBE Si structures, using an experimental set-up with a time response of 200 ns, have been performed with different excitation conditions. Besides the spontaneous Er emission (700 μs), some fast EL decay processes associated with the Auger energy transfer via free carriers (4 μs), and the hot carrier effects (200 ns) have been identified.     

ZnS:Tb薄膜电致发光的量子效率及过热电子分布

采用高频溅射的方法制备了高亮度的ZnS:Tb薄膜电致发光器件.测量了发射强度比I(5D3-7F6)/I(5D4-7F4)随激发电压的变化关系、弛豫时间及发光的量子效率,计算了碰撞截面,分析ZnS:Tb的过热电子的分布,并与ZnS:Mn进行了比较.指出了ZnS:Tb效率与ZnS:Mn效率差异的可能原因.     

Electroluminescence from a current-emitting nanostructured silicon device

A three-dimensional silicon based nanodevice mainly consisting of two conductive silicon cantilevers was fabricated out of silicon-on-insulator material by electron beam lithography, reactive ion etching, and fluoride based wet chemical etching. One of the cantilevers is bent and sticks to the silicon substrate while the other one is freely suspended. We observed electroluminescence in the visible range when a voltage of any polarity is dropped across both levers. The measured spectra covered the range 400–950 nm peaking at about 650 nm. The current applied to the device could tune the intensity of the electroluminescence spectrum. Light powers ranging from 160 fW to some pW were measured at frequencies up to 17 kHz. The origin of the electroluminescence is discussed in comparison to porous silicon and spark-processed silicon.     

Field-induced functions of porous Si as a confined system

Electroluminescent porous Si (PS) diodes exhibit various useful functions under a high-electric field. The experimental PS diodes are composed of thin semitransparent metal films, PS layers (about 500 nm thick in minimum), p- or n-type Si substrates and ohmic back contacts. Definite nonlinear electrical behavior (negative resistance and nonvolatile bistable memory effects) and cold electron emission phenomena appear in these PS diodes associated with the EL emission. Both the negative resistance and memory effects are related to the charging of Si nanocrystallites by field-induced carrier injection. The electron emission observed in the PS diodes formed on n+–Si substrates is caused by hot electrons tunnelling through the top contact. By an appropriate structural control of PS, the effective drift length under a high-field conduction is significantly increased, and then electrons are emitted ballistically. These functions reflect the activity of PS as a nanocrystalline confined system.     

Infrared induced visible emission from porous silicon: the mechanism of anodic oxidation

The visible luminescence caused by anodic oxidation of p-type porous silicon has been studied. It is shown that similar luminescence can be observed in n-type material by illumination with near-infrared light. Addition of a suitable reducing agent to the electrolyte solution can both suppress the oxidation of the porous layer and quench its luminescence. These results confirm a previously suggested mechanism, in which the capture of a valence band hole in a surface bond of the porous semiconductor gives rise to a surface state intermediate capable of thermally injecting an electron into the conduction band.