含苯并硒二唑聚咔唑/芴类共轭聚电解质及其前驱体的合成与性能研究

采用Suzuki偶合反应合成了一系列新型的咔唑、芴和2,1,3-苯并硒二唑的共聚物——聚[3,6-(N-(2-乙基己基))咔唑-2,1,3-苯并硒二唑-9,9-双(N,N-二甲基胺丙基)芴](PCzN-BSeD)及其相应的聚电解质衍生物——聚[3,6-(N-(2-乙基己基))咔唑-2,1,3-苯并硒二唑-9,9-(双(3′-(N,N-二甲基)-N-乙基铵)丙基)芴]二溴(PCzNBr-BSeD).在聚咔唑和芴中引入不同比例的2,1,3-苯并硒二唑(BSeD)单元,引起了由咔唑和芴链段向窄带隙苯并硒二唑(BSeD)单元有效的能量转移.通过对聚合物电致发光性能的研究,发现用聚(3,4-亚乙基二氧基噻吩)(PEDOT)或聚(3,4-亚乙基二氧基噻吩)/聚乙烯咔唑(PEDOT/PVK)作为空穴传输层时,器件的性能相差不大,表明咔唑的引入较明显的改善了聚合物的空穴注入性能.而且几乎所有的聚合物用高功函数铝作阴极的器件和用钡/铝作阴极的器件具有相近的发光性能,表明这类聚合物具有良好的电子注入性能.     

Polycyclic aromatic hydrocarbon-bridged coumarin derivatives for organic light-emitting devices

Three biscoumarin dyes bridged by polycyclic aromatic bridges (anthracen, pyrene and dibenzo[g,p]chrysene) were prepared as the emissive materials for the application of organic light-emitting devices. The relationship between their structures, photophysical properties, electrochemical properties and performances of organic light-emitting devices are described. The multilayered doped devices with a configuration of ITO/NPB (20 nm)/TBADN: biscoumarin compound (x wt%, 30 nm)/TPBi (30 nm)/Liq (2 nm)/Al (100 nm) have been successfully fabricated by vacuum-deposition method. All the devices showed green emission with high electroluminescent efficiencies. Especially, the device based on the compound containing pyrene as a bridge group at 7% doping concentration showed the best performance with a maximum brightness of 10552 cd/m², maximum luminous efficiency of 5.39 cd/A and maximum external quantum efficiency (EQE) of 2.35%.     

Synthesis,structure, and luminescence of rhenium(I) complexes with substituted bipyridines

Two new rhenium(I) complexes chelated by a substituted 2,2′-bipyridine with general formula Re(CO)₃LCl, where L?=?6?-(2″-methoxyphenyl)-2,2′-bipyridine (L₁ ) and 6?-(4″-diphenylaminophenyl)-2,2′-bipyridine (L₂ ), are synthesized and characterized by IR, NMR, and elemental analysis. Structure of 1 was determined by single-crystal X-ray crystallography, revealing that rhenium is six-coordinate octahedral. The electrochemical, photophysical, and thermal properties of the two rhenium(I) complexes were investigated. Electroluminescent devices were fabricated by doping 1 in polymer blend host of poly(vinylcarbazole) and 2-tert-butylphenyl-5-biphenyl-1,3,4-oxadiazole using simple solution spin-coating technique. The device exhibits a maximum current efficiency of 2.97?cd?A^?1 and peak brightness in excess of 2390?cd?m^?2.     

Light Emitting Diodes Prepared from Terbium‐Immobilized Polyurea Chelates

Abstract

This article describes the synthesis and application of poly(1,4‐phenylene‐2,6‐pyridylurea) (MCPU) as a charge transporting and rare earth metal chelating host matrix for organic light emitting diodes (OLEDs). The chelation between MCPU and Terbium (Tb³⁺) (the rare earth metal used in this study), is facile in nature and persists in thin films obtained by spin coating onto various substrates. Multiple polymer chelating moieties at each Tb ion site may derive from MCPU repeat units from a single polymer chain or two polymer chains, and their respective structures are proposed. The emissive properties of these films in the presence and absence of Terbium (Tb³⁺) were characterized by steady state UV‐VIS absorption spectroscopy and photoluminescence (PL) spectroscopy. The PL emission from Tb(MCPU) films indicate contribution from both the host MCPU and the Tb ions. The incorporation of these films in OLEDs employing different device architectures yields electroluminescence spectra, which show the characteristic emission of the Tb ions but no emission from the host polymer matrix. Although these devices are not optimized, they exhibit an order of magnitude higher external quantum efficiency as compared to that of conventional aluminum tris 8‐hydroxyquinoline (Alq₃) based OLEDs, at low current densities.     

染料掺杂聚合物电注入发光材料的激发态稳定性

染料掺杂聚合物电注入发光材料的激发态稳定性田文晶,马於光,吴英,薛善华,刘式墉,沈家骢（吉林大学分子光谱与分子结构开放实验室、集成光电子学国家重点联合实验室,长春,１３００２３）关键词染料掺杂聚合物,电注入发光,荧光光谱,ＵＶ－Ｖｉｓ吸收谱自英国剑桥...     

ac anddc electroluminescence in CaS:Cu,Sm phosphors

Theac anddc electroluminescence in CaS:Cu, Sm have been investigated. The luminescence spectra show three peaks in the visible region. The brightness-voltage dependence satisfies the relationB=B ₀ exp (−b/V ^1/2) with two modes of variation. The nature of this dependence indc andac at different frequencies is discussed. The electroluminescence brightness also depends on the temperature of the phosphors and shows a peak around 80.0;C. The electroluminescence efficiency increases with applied voltage up to 2200 V and this dependence on V is explained on the basis of a transport process of the Schottky emission type.     

Pivotal role of ballistic and quasi-ballistic electrons on LED efficiency

Significant progress in the power conversion efficiency and brightness of InGaN-based light emitting diodes (LEDs) has paved the way for these devices to be considered for LED lighting. In this realm, however, the efficiency must be retained at high injection levels in order to generate the lumens required. Unfortunately, LEDs undergo a monotonic efficiency degradation starting at current densities even lower than 50 A/cm² which would hinder LED insertion into the general lighting market. The physical origins for the loss of efficiency retention are at present a topic of intense debate given its enormous implications. This paper reviews the current status of the field regarding the mechanisms that have been put forward as being responsible for the loss of efficiency, such as Auger recombination, electron overflow (spillover), current crowding, asymmetric injection of electrons and holes, and poor transport of holes through the active region, the last one being applicable to multiple quantum well designs. While the Auger recombination received early attention, increasing number of researchers seem to think otherwise at the moment in that it alone (if any) cannot explain the progressively worsening loss of efficiency reduction as the InN mole fraction is increased. Increasing number of reports seems to suggest that the electron overflow is one of the major causes of efficiency degradation. The physical driving force for this is likely to be the relatively poor hole concentration and transport, and skewed injection favoring electrons owing to their relatively high concentration. Most intriguingly there is recent experimental convincing evidence to suggest that quasi-ballistic electrons in the active region, which are not able to thermalize within the residence time and possibly longitudinal optical phonon lifetime, contribute to the carrier overflow which would require an entirely new thought process in the realm of LEDs.     

ZnO纳米棒／MEH-PPV异质结的复合电致隧穿发光

利用低温水热法生长的ZnO纳米棒（ZnO-NRs）,和p型有机半导体材料聚[2-甲氧基-5-（2-乙基己氧基）-1,4-苯撑乙烯撑]（MEH-PPV）复合制备了结构为“ITO/ZnO晶种/ZnO-NRs/MEH-PPV/Al”的发光器件。测试结果发现,该器件具有非常好的二极管整流特性。对ZnO-NRs/M EH-PPV异质结施加超过17 V的反向偏压时,可同时获得两种半导体材料的发光,且ZnO近紫外光（380 nm ）发射强度远大于 M EH-PPV的红橙光强度,发光功率随着反向偏压的增加迅速增强,然而施加正向偏压时未探测到发光。该器件的发光机理不同于其他文献报道的正偏压发光,而属于反偏压发光器件,其发光机理归因于有机无机复合异质结的界面特殊性和ZnO-NRs的纳米尺寸效应,反偏压下器件实现的是载流子隧穿发光,而正偏压时载流子以表面态的无辐射复合及漏电流方式消耗。     

Electroluminescence of colloidal ZnSe quantum dots

The article reports a green chemical synthesis of colloidal ZnSe quantum dots at a moderate temperature. The prepared colloid sample is characterised by UV-vis absorption spectroscopy and transmission electron microscopy. UV-vis spectroscopy reveals as-expected blue-shift with strong absorption edge at 400 nm and micrographs show a non-uniform size distribution of ZnSe quantum dots in the range 1-4 nm. Further, photoluminescence and electroluminescence spectroscopies are carried out to study optical emission. Each of the spectroscopies reveals two emission peaks, indicating band-to-band transition and defect related transition. From the luminescence studies, it can be inferred that the recombination of electrons and holes resulting from interband transition causes violet emission and the recombination of a photon generated hole with a charged state of Zn-vacancy gives blue emission. Meanwhile electroluminescence study suggests the application of ZnSe quantum dots as an efficient light emitting device with the advantage of colour tuning (violet-blue-violet).     

一种新型的稀土Tb配合物的光致和电致发光性能的研究

用一种新型的含酚羟基的Schiff碱三足配体H₃L3稀土Tb配合物作发光层制备了三层结构电致发光器件,器件在正向直流偏压下发出明亮的绿光。器件的电致发光(EL)光谱和Tb配合物薄膜的光致发光(PL)光谱与典型的Tb配合物的发光光谱相同。研究了器件发光及电学特性,讨论了该种新型的稀土Tc配合物的发光机理。