左手介质椭圆光波导基模传播特性

在椭圆柱坐标系中,采用分离变量方法,得出了左手介质椭圆光波导本征方程的近似解,通过数值计算,分析了椭圆波导偏心率、左手介质的电容率、磁导率对椭圆光波导基模传播特性的影响,并将左介质光波导与右手介质光波导基模特性进行对比,得出左手介质光波导的基模特性与右手介质光波导基模特性差别不大的结论.     

液晶光阀的电光色散特性研究

分析液晶光阀(LCLV)的电光色散特性,重点研究扭曲向列型液晶光阀TB3639的电光色散特性。在温度为27 ℃时, 将TB3639液晶光阀置于频率为1 000 Hz的交流电场中,测出电光特性T-λ曲线,同时得到不同波长的T-V电光特性曲线,确定对比度与光波波长的函数关系k(λ),并得出电光色散特性关系曲线k(λ)～λ。分析结果表明, TB3639液晶光阀在可见光区域,具有相对较高的对比度,其色散较小。波长在450～750 nm区域其对比度均大于0.8;其中波长在550～670 nm区域其对比度变化不大,均大于0.95,其色散最小。     

LiNbO3∶Cr∶Cu晶体吸收特性及非挥发全息存储研究

研究了LiNbO3∶Cr∶Cu晶体的吸收特性,发现LiNbO3∶Cr∶Cu（含0.14 wt.% Cr2O3 和 0.011 wt.% CuO）晶体存在两个明显的吸收峰,中心波长分别位于480 nm和660 nm; 随着Cr的含量逐渐减小,Cu的含量逐渐增大,短波段不存在明显吸收峰,掺Cr的含量越大,中心波长在660 nm处的吸收越大；633 nm红光虽然位于中心波长为660 nm的吸收峰内,但它无助于光折变过程.分别采用390 nm紫外光和488 nm蓝光作为敏化光,514 nm绿光作为记录光的记录方案,实现了非挥发全息记录,掺入适量的Cr( 比如NCr=2.795×1025 m－3,NCr/ NCu=1)有助于全息记录性能的提高.     

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在四阳极直流放电装置上,测量并分析了辉光放电的电流-电压和发光特征随气压的变化关系。结果表明,采用稳流放电模式比稳压放电具有更宽的稳定放电气压和电流范围,能在从1～800Pa的较宽气压范围内实现氦气辉光放电,放电电流可达到500mA左右。随着电极表面亮斑的变化,对于同一气压,在低电流区,放电电压几乎成指数增长;随电流增大,电压的增长速度变缓;对于高的气压,碰撞频率的增大使得电压随电流升高的速率变小。分析表明,放电处于异常辉光区。从放电管的CCD图像可以看出,对于同一放电电流,随气压的升高,等离子体往阴极收缩。     

Thermomagnetic hysteresis and electrical transport in amorphous films

We report resistivity and magnetization measurements on an amorphous Ni₇₄Mn₂₄Pt₂ thin film in the temperature range of 3–300 K. Two significant features are apparent in both the magnetic susceptibility and electrical resistivity. A low-temperature (low-T) anomaly is observed at about 40 K, where a cusp appears in the resistivity, while a concomitant step-like increase in zero-field-cooled (ZFC) magnetization (M) appears with increasing temperature. The low-T anomaly is attributed to a crossover from a pure re-entrant spin-glass within individual domains to a mixed ferro-spin-glass regime at lower temperatures. By contrast, the high-temperature (high-T) anomaly, signaled by the appearance of hysteresis below 250 K, corresponds to the freezing of transverse spins in individual domains acting independently. Between the low-T and high-T anomalies a small but discernable magnetic hysteresis is observed for warming vs. cooling in the field-cooled (FC) case. This behavior clearly indicates the presence of domain structure in the sample, while the disappearance of this hysteresis at lower temperatures indicates the complete freezing of the spin orientation of these domains. According to these results, we have divided the magnetic state of this sample into three regions: at temperatures above 250 K, the sample behaves like a soft ferromagnet, exhibiting M vs. H loops with very small hysteresis (less than 5 Oe). As the temperature is lowered into the intermediate region (the range 40–250 K), spins become frozen randomly and progressively within the individual domains. These domains behave independently, rather than as a cooperative behavior of the sample. Weak irreversibility sets in, indicating the onset of transverse spin freezing within the domains. At temperatures below 40 K, the M vs. H loops exhibit larger hysteresis, for both the ZFC and FC cases, as in a pure spin-glass. We have also demonstrated giant noise in the resistivity at temperatures just below 250 K. Such noise can originate from fluctuations of the domains near the film surface because of competing effective bulk and surface anisotropy fields. The large observed amplitude may be explained by means of a large ferromagnetic anisotropy in the resistivity due to the large spin–orbit effect seen in NiMn systems. Finally, the low-T peak in the resistivity has been analyzed using Fisher and Langer's expression based on the Friedel Model proposed for critical transitions in transition metals (s–d systems). The fitted results are in satisfactory agreement with the predictions of this model.     

Size dependence of the thermo-electrodynamics states of composite high-Tc superconductors and its effect on the current instability conditions

The effect of transverse geometries of the slab of composite high-T_c superconductors on their stable and unstable thermal and electrodynamics transient states in the incomplete and complete penetration modes during the current charging are discussed. The transient period when the electric field that is induced by the charged current becomes more homogeneous during the initial stage of the complete penetration mode in the sub-critical voltage range is studied. In the over-critical voltage range, the cross-section shape of the slab affects its stable and unstable temperature variation. As a result, the current instability condition is not identical for high-T_c superconducting composite tapes that have the same cross-sectional area with various shapes of the cross-section. The condition depends on their thickness: the less thickness, the more stable the current distribution in the composite superconductors with the same cross-sectional area. This feature is a result of the unavoidable reduction of the current-carrying capacity of a high-T_c superconducting composite by the temperature increase. This reduction is caused by the relevant temperature dependence of electrodynamics states of the composite. This temperature dependence happens even during a stable stage of the current charging. These mechanisms must be considered during experiments at which the critical or quenching currents are defined.     

对等网络应用中的网络统计特征分析

本文基于实测数据抽象出用户网络与资源网络,探讨了对等网络中用户、资源及其内部的相互作用关系,发掘并分析了其内在的网络统计特征. 分析结果表明,用户节点度值及权值呈分段分布,体现了其各异的活跃性;网络资源的流行度差异明显,度值和权值近似呈幂律分布. 用户网络与资源网络存在分簇结构,少数簇中含大量节点,多数簇所含节点数量较少. 用户网络中,同簇内的用户有着相似的兴趣趋向,不同簇用户间兴趣趋向存在着差异,资源网络各簇中不同类别的资源间呈现出明显的关联性.     

Characterization of chemically deposited ZnSe/SnO2/glass films: Influence of annealing in Ar atmosphere on physical properties

The Zinc Selenide (ZnSe) thin films have been deposited on SnO₂/glass substrates by a simple and inexpensive chemical bath deposition (CBD). The structural, optical and electrical properties of ZnSe films have been characterized by X-ray diffraction (XRD), Energy Dispersive X-ray Analysis (EDAX), optical absorption spectroscopy, and four point probe techniques, respectively. The films have been subjected to different annealing temperature in Argon (Ar) atmosphere. An increase in annealing temperature does not cause a complete phase transformation whereas it affects the crystallite size, dislocation density and strain. The optical band gap (E_g) of the as-deposited film is estimated to be 3.08 eV and decreases with increasing annealing temperature down to 2.43 eV at 773 K. The as-deposited and annealed films show typical semiconducting behaviour, dρ/dT > 0. Interestingly, the films annealed at 373 K, 473 K, and 573 K show two distinct temperature dependent regions of electrical resistivity; exponential region at high temperature, linear region at low temperature. The temperature at which the transition takes place from exponential to linear region strongly depends on the annealing temperature.     

Studies on the structural and electrical properties of F-doped SnO2 film prepared by APCVD

Fluorine-doped tin oxide films (SnO₂:F, FTO) were deposited by atmosphere pressure chemical vapor deposition (APCVD) on Na-Ca-Si glass coated with a diffusion barrier layer of SiO_xC_y. The effects of post-heating time at 700 °C on the structural and electrical properties of SnO₂:F films were investigated. The results showed that SnO₂:F films were polycrystalline with tetragonal SnO₂ structure, SnO phase was present in SnO₂ film, and abnormal grain growth was observed. The element distribution in the film depth was measured with X-ray photoelectron spectroscopy (XPS) and revealed that when the heating time increased from 202 s to 262 s, the oxygen content in the surface increased from 78.63% to 83.38%. The resistivity increased from 3.13 × 10⁻⁴ for as-deposited films to 4.73 × 10⁻⁴ Ω cm when post-heated for 262 s. Hall mobility is limited by the ionized impurity scattering rather than the grain boundary scattering.     

Extraction of important electrical parameters of CuO

Conductivity, X-ray diffraction (XRD), optical absorption and atomic force microscopy (AFM) measurements of CuO thin film were presented. Three distinct electrical conduction contributions with discrete characteristic activation energies were observed. The applicability of various theoretical models was considered to explain results on electrical transport. We extracted important electrical parameters of CuO, which might be useful for its gas sensor applications.