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61.
The rotational spectra of six isotopomers of the linear and bent isomers of HF-N2O have been collected in the 7-18 GHz region with a Fourier transform microwave spectrometer. The nuclear hyperfine structure in the spectra produced by HF spin-spin coupling interaction and nuclear quadrupole coupling interactions due to the D nucleus of DF and the nuclei of N2O have been resolved and analyzed. In the linear isomer, H in HF is bonded to the terminal N in N2O. The NF bond lengths are 2.9808(2) Å for the HF-containing isotopomers and 2.9732(2) Å for the DF-containing isotopomers. The zero point angles are 23.1° for HF and 31-34° for N2O. The hyperfine constants suggest that the HF bond is lengthened by 0.0105 Å upon complexation and that the electric field gradients of the two nitrogen nuclei in N2O are perturbed differently in the complex. In the bent isomer, the hydrogen bond is formed between HF and O in N2O. The intermolecular distances are 3.4942(2) Å for the HF-containing isotopomers and 3.4436(2) Å for the DF-containing isotopomers, with HF and N2O forming angles of 34° and 46°, respectively, with the intermolecular axis. The nuclear quadrupole coupling constants of the two nitrogen nuclei do not indicate electric field gradient perturbation in this isomer.  相似文献   
62.
The transition from the biexciton to the exciton can turn over the direction of the electric dipole of a polymericmolecule. This turning-over action combined with the photoinduced polarization reversion can be used as a switch. Theswitching speed is governed by the relaxation time of the turning-over process, which can be determined by a dynamicalsimulation.  相似文献   
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64.
The electronic structures of doped Sb2O5 by IV-family elements (Si, Ge and Sn) were examined using the density function theory (DFT). Density of states (DOSs) results showed that the substituted IV-family elements act as acceptors in Sb2O5. Partial DOSs indicates that by substituting Ge(Ge Sb ) or Sn(Sn Sb ), there may be a larger contribution to the total DOSs near E F than by substituting Si, which suggests that doping Ge or Sn in Sb2O5 produces better ptype doping compared to doping Si. Formation energy results show that IV-family elements are more likely to exist in the substituted position rather than in the interstitial position in Sb2O5, decreasing any self-compensation effect and making it easier for IV-family elements to realize ptype doping in Sb2O5. Ionization energy results show that Ge Sb or SnSb, two among the three impurities considered, act as shallow acceptors in Sb2O5, thus producing a higher concentration of holes.   相似文献   
65.
The hydrogenic impurity binding energy in rectangular quantum well wire including both barriers of finite height and an applied electric field are studied. The polaron effects on the ground-state binding energy in electric field are investigated by means of Landau-Pekar variation technique. The results for the binding energy as well as polaronic correction are obtained as a function of the size of the wire, the applied electric field and the position of the impurity. Our calculations are compared with previous results in quantum wires of comparable dimensions.  相似文献   
66.
The finite-difference time-domain method based on recursive convoltion method (RC-FDTD) for the electric anisotropic dispersive medium is discussed in detail. To exemplify the availability of the three-dimensional RC-FDTD algorithm, the backscattering Radar-Cross-Section(RCS) of a non-magnetized plasma sphere is computed, and the numerical results are the same as the one of the Shift Operater-FDTD method, and show that the RC-FDTD method is correct and efficient. In addition, the co-polarized and cross-polarized backscattering time-domain of a magnetized plasma sphere are obtained by the RC-FDTD algorithm. The results show that when the external magnetic field is implemented, the cross-polarized component appear, evidently.  相似文献   
67.
Electric field modulation spectroscopy using scanning tunneling microscopy (STM-EFMS) measurements were performed for a Si(1 1 1) surface with epitaxially-grown β-FeSi2 islands. STM-EFMS spectra acquired around the indirect energy gap of Si reproduced the photon energy peak position observed in conventional macroscopic EFMS experiments. However, a considerable discrepancy was found in the energy position of the accompanying spectral dip. We examined two possibilities for the cause of this discrepancy. The first interpretation is that the STM-‘EFMS’ spectra may simply reflect the local density of states based on essentially the same principle as that of tunneling spectroscopy. However, this interpretation is ruled out by the facts that almost identical STM-EFMS spectra are obtained also out of the regime of tunneling. The second interpretation is a spectral distortion due to a large electric field steadily built in the sample surface, which is supported experimentally by a spectral shift of the dip energy that is induced by altering the tip-induced band bending.  相似文献   
68.
Y. Otsuka  N. Shima  K. Makoshi 《Surface science》2007,601(18):4063-4065
We present our theoretical studies of electric conductance through nanostructure bridges. A simple expression of the electric conductance is obtained by using the phase-shift analysis. The phase-shifts are given by solving the characteristic equation obtained by extending the method applied to the single impurity problem in the metal. It is shown that the importance of the effect due to multiple orbitals in nanostructures. The conductance of the chain consisting atoms with spz character such as Al is given.  相似文献   
69.
Summary The formation of electron pairs at the glass walls of the enclosing container in a low-pressure, high-frequency, electrodeless, rare-gas discharge is discussed. The pairs drift towards the discharge tube axis under the acceleration of the weak radial-space-charge electric field. The properties of the gas in an uniform magnetic field are outlined in a model which is subsequently applied to experimental data from four different experiments in four rare gases. Determinations of plasma parameters from the analyses of the experiments are found to agree. The values for the pair aggregation number,n′, for the excited plasmas on the tube axis range from one at low-power excitation to between ten and twenty at higher powers. In the afterglow plasmas following the cessation of the energizing current pulse (which is typically 20 ms in duration), the aggregation number varies from one in the body of the gas to between one and five on the tube axis. The direct evidence for the presence of electron pairs, and aggregates of electron pairs, is obtained from the ≪spin-flip≫ of single electrons of a pair in a magnetic field, an event which destroys the pair, or pair aggregate, and the associated experimental phenomena.
Riassunto Si discute la formazione di coppie di elettroni, sulle pareti di vetro del contenitore circostante in una discarica a bassa pressione, alta frequenza, senza elettrodi e a gas rari. Le coppie si spostano verso l’asse del tubo della discarica con l’accelerazione del campo elettrico debole con carica di spazio radiale. Le proprietà del gas in un campo magnetico uniforme sono sottolineate in un modello che è successivamente applicato a dati sperimentali da quattro diversi esperimenti in quattro gas rari. Si trova che i valori dei parametri del plasma dalle analisi degli esperimenti sono in accordo. I valori del numero di aggregazione della coppia,n′, per i plasma eccitati sugli assi del tubo variano da 1 ad eccitazione a bassa potenza a 10÷20 ad alte potenze. Nei plasmi a fluorescenza che seguono la cessazione dell’impulso di corrente energizzante (che dura tipicamente 20 ms) il numero di aggregazione varia da uno nel corpo del gas a 1÷5 sull’asse del tubo. La prova diretta della presenza delle coppie di elettroni, e di aggregati di coppie di elettroni è ottenuta dallo ≪spin-flip≫ di elettroni singoli di una coppia in un campo magnetico, un evento che distrugge la coppia, o l’aggregato di coppie, e dagli associati fenomeni sperimentali.

Резюме Обсуждается образование электронных пар на стеклянных стенках замкнутого контейнера при высокочастотном, безэлектродном разряде в разреженном газе при низком давлении. Пары дрейфуют по направлению к оси разрядной трубки под действием электрического поля слабого радиального пространственного заряда. Описываются свойства газа в однородном магнитном поле, используя модель, которая впоследствии применяется к экспериментальным данным из четырех различных экспериментов, проведенных для четырех разреженных газов. Обнаружено хорошее согласие при определении параметроб плазмы из анализа указанных экспериментов. Значения для числа электронных пар в агрегации,n′, для возбужденной плазмы на оси трубки изменяется от единицы при инзкой степени возбуждения до величины между десятью и двадцатью при высоких степенях возбуждения. При послесвечении плазмы, после прекращения возбуждающего имлульса тока (который обычно имеет длительность 20 мс), число пар в агрегации изменяется от единицы в объеме газа до величины между единицей и пятью на оси трубки. Получено прямое подтверждение для наличия электронных пар и агрегаций электронных пар из изменения ориентции спина отдельных злектронов пары в магнитном поле, т.е. из события, которое разрушает пару или агрегации рар, и из связанных экспериментальных явлений.
  相似文献   
70.
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