Surface ablation by excimer laser irradiation of Ti and Ti6Al4V alloy

This paper presents the surface microstructure of Ti and Ti6Al4V alloy irradiated with a high output energy XeCl ( = 308 nm) excimer laser. The treatments are carried out on both materials at two beam fluences and the effects of single- and multiple-pulse irradiation are compared. The results of the scanning electron microscopy and of the X-ray diffraction techniques suggest the possible influence of both time-behaviour and energy fluence of the laser pulse on the relative weight of the ablation rate and of the reaction product deposition rate at the sample surface.     

Simple method for estimating shape functions of optical spectra

A simple method for estimating shape functions of optical spectra is proposed, based on the numerical correlation with an assumed optical spectrum composed of a central main rectangular component and two right-angled triangular wings on either side of the main component. The degrees of correlation between observed and assumed spectra were examined using spectral and coherence widths of those spectra and pulsewidths of Fourier-transform-limited pulses calculated from those spectra. By using this method, shape functions of output spectra from superluminescent diodes and a self-pulsating laser diode were evaluated in detail over a relatively wide injection current range beyond their rated currents.     

Size evolution and photoluminescence of silicon nanocrystallites in evaporated SiOx thin films upon thermal processing

Silicon suboxide thin films have been fabricated by physical vapor deposition of silicon monoxide in vacuum at controlled oxygen partial pressure. These films undergo a phase separation into silicon- and oxygen-enriched regions upon thermal processing. At temperatures around 900 °C, the onset of Si nanocrystallite formation is observed, regardless of film stoichiometry. With increasing initial oxygen content of the films, the mean size of created nanocrystallites decreases whereas the corresponding photoluminescence emission blueshifts. The photoluminescence intensity increases with increasing annealing temperature up to 1050 °C. Upon resonant excitation at low temperatures, the photoluminescence exhibits phonon replica signature. Therefore, the emission may be attributed to excitonic recombination in the nanocrystallites. Received: 3 July 2001 / Accepted: 6 August 2001 / Published online: 17 October 2001     

Coverage-dependent spin reorientation transition temperature of the Fe double-layer on W(1 1 0) observed by scanning tunneling microscopy

The magnetic domain structure of the Fe double-layer on W(1 1 0) is investigated using a variable-temperature scanning tunneling microscope. At low temperature the well-known periodic magnetic stripe domain structure is identified via the observation of domain walls. This is done with a non-spin-polarized tip by taking advantage of a spin–orbit coupling effect. At higher temperature a reorientation to an in-plane easy axis is observed. The spin reorientation temperature is found to be coverage-dependent and it is determined for samples with a coverage of 1.5–2.2 atomic layers of Fe on W(1 1 0).     

Morphological and electronic properties of the thin film phase of pentacene investigated by AFM and STM/STS

We investigated the morphological, structural and electronic properties of Pentacene thin films grown by vacuum thermal evaporation on different inert substrates at room temperature. The results of our AFM and STM analysis give an interplanar spacing of 1.54 nm corresponding to the (0 0 1) distance of the so-called “thin film phase”. The STS measurements show an HOMO-LUMO gap of 2.2 eV.     

Effects of in situ thermal annealing on the structural, optical, and electrical properties in Hg0.7Cd0.3Te epilayers grown on CdTe buffer layers

Scanning electron microscopy (SEM), Fourier transform infrared (FTIR) transmission, and Hall effect measurements were performed to investigate the structural, optical, and electrical properties of as-grown and in situ-annealed Hg_0.7Cd_0.3Te epilayers grown on CdTe buffer layers by using molecular beam epitaxy. After the Hg_0.7Cd_0.3Te epilayers had been annealed in a Hg-cell flux atmosphere, the SEM images showed that the surface morphologies of the Hg_0.7Cd_0.3Te thin films were mirror-like with no indication of pinholes or defects, and the FTIR spectra showed that the transmission intensities had increased in comparison to that of the as-grown Hg_0.7Cd_0.3Te epilayer. Hall-effect measurements showed that n-Hg_0.7Cd_0.3Te epilayers were converted to p-Hg_0.7Cd_0.3Te epilayers. These results indicate that the surface, optical, and electrical properties of the Hg_1 − xCd_xTe epilayers are improved by annealing and that as-grown n-Hg_1 − xCd_xTe epilayers can be converted to p-Hg_1 − xCd_xTe epilayers by in situ annealing.     

High-conductive nanocrystalline silicon with phosphorous and boron doping

Intrinsic, P- and B-doped hydrogenated amorphous silicon thin films were prepared by plasma-enhanced chemical vapor deposition technique. As-deposited samples were thermally annealed at the temperature of 800 °C to obtain the doped nanocrystalline silicon (nc-Si) films. The microstructures, optical and electronic properties have been evaluated for the undoped and doped nanocrystalline films. X-ray photoelectron spectroscopy (XPS) measurements demonstrated the presence of the substitutional boron and phosphorous in the doped films. It was found that thermal annealing can efficiently activate the dopants in films accompanying with formation of nc-Si grains. Based on the temperature-dependent conductivity measurements, it was shown that the activation of dopant by annealing increased the room temperature dark conductivity from 3.4 × 10⁻⁴ S cm⁻¹ to 5.3 S cm⁻¹ for the P-doped films and from 1.28 × 10⁻³ S cm⁻¹ to 130 S cm⁻¹ for the B-doped films. Meanwhile, the corresponding value of conductivity activation energies was decreased from 0.29 eV to 0.03 eV for the P-doped films and from 0.3 eV to 5.6 × 10⁻⁵ eV for the B-doped films, which indicated the doped nc-Si films with high conductivity can be achieved with the present approach.     

NaCl islands decorated with 2D or 3D 3,4,9,10-perylene-tetracarboxylic-dianhydride nanostructures

The formation of PTCDA (3,4,9,10-perylene-tetracarboxylic-dianhydride) nanostrutures on Au(1 1 1)-() covered with NaCl islands has been studied using scanning tunneling microscopy (STM). Atomically resolved STM images show that NaCl grows as (1 0 0)-terminated layers on Au(1 1 1)-(). Local atomic hexagonal packing has also been observed in the NaCl(1 0 0) layer. At submonolayer NaCl coverage, PTCDA forms two-dimensional islands on the Au(1 1 1) surface and nucleate preferentially at the NaCl island step edges. When the Au surface is fully covered with NaCl layers, PTCDA molecules form three-dimensional molecular clusters decorating the step edges of NaCl layers.     

Dirac and Lagrangian reductions in the canonical approach to the first-order form of the Einstein-Hilbert action

It is shown that the Lagrangian reduction, in which solutions of equations of motion that do not involve time derivatives are used to eliminate variables, leads to results quite different from the standard Dirac treatment of the first-order form of the Einstein-Hilbert action when the equations of motion correspond to the first class constraints. A form of the first-order formulation of the Einstein-Hilbert action which is more suitable for the Dirac approach to constrained systems is presented. The Dirac and reduced approaches are compared and contrasted. This general discussion is illustrated by a simple model in which all constraints and the gauge transformations which correspond to first class constraints are completely worked out using both methods to demonstrate explicitly their differences. These results show an inconsistency in the previous treatment of the first-order Einstein-Hilbert action which is likely responsible for problems with its canonical quantization.     

General coordinate invariance and conformal invariance in nonrelativistic physics: Unitary Fermi gas

We show that the Lagrangian for interacting nonrelativistic particles can be coupled to an external gauge field and metric tensor in a way that exhibits a nonrelativistic version of general coordinate invariance. We explore the consequences of this invariance on the example of the degenerate Fermi gas at infinite scattering length, where conformal invariance also plays an important role. We find the most general effective Lagrangian consistent with both general coordinate and conformal invariance to leading and next-to-leading orders in the momentum expansion. At the leading order the Lagrangian contains one phenomenological constant and reproduces the results of the Thomas-Fermi theory and superfluid hydrodynamics. At the next-to-leading order there are two additional constants. We express various physical quantities through these constants.