In situ spectroscopic ellipsometry: Application to Sb coverage measurement in the monolayer range on Si (111)

In this paper, we present an analysis of antinomy deposition on silicon in the range of 0.1 to 1 monolayer by in situ spectroscopic ellipsometry. After a careful choice of viewpoint material, ellipsometric measurements are found to be sensitive to small surface perturbations, especially with antimony. In fact, less than a 0.1 monolayer of antimony on silicon at room temperature is detectable. Moreover, a linear dependence of the ellipsometric signal on Sb coverage is observed in the monolayer range. Consequently, the signal versus time variation directly gives the Sb adsorption kinetics on silicon. The saturation to one monolayer of compact antimony on silicon surface is used in order to calibrate the spectra.     

A Light-Cone QCD Inspired Effective Hamiltonian Model for Pseudoscalar and Scalar Mesons

Considering the one-gluon exchange interaction and phenomenological quark confinement potential, an improved light-cone effective Hamiltonian for mesons and the corresponding radial mass eigen equations in angular momentum representation is obtained. Solving the J = 0 eigen equations numerically and using a set of adjustable parameters, the obtained solutions for ground states and radial excited states can simultaneously describe both pseudoscalar and scalar flavour-off-diagonal mesons. Some radial excited states are also predicted and wait for experimental test. More results for the vector and axial vector mesons are expected.     

Investigation of the interaction of evaporated aluminum with vapor deposited Teflon AF films via X-ray photoelectron spectroscopy

The interfacial bonding and mixing between evaporated aluminum and a vapor deposited Teflon AF (abbreviated to AF) film have been investigated with X-ray photoelectron spectroscopy. Graphite carbon (C–C), and aluminum carbide (Al–C), oxide (Al–O–C) and fluoride (Al–F) are formed when aluminum atoms are deposited on to the AF film. With increasing deposition of aluminum, the concentrations of these newly formed components increase gradually. Moreover, in situ annealing results in remarkable increases in the C–C, Al–C, Al–O–C and Al–F configurations and a decrease in metallic aluminum. No significant diffusion of aluminum into the AF film was observed during the annealing. The Al compounds form a layer at the Al/AF interface that acts as an adhesion promoter and diffusion barrier. Received: 21 October 2002 / Accepted: 22 October 2002 / Published online: 15 January 2003 RID="*" ID="*"Corresponding author. Fax: +49-431/880-6229, E-mail: sjding@yahoo.com     

Recurring angular distribution patterns in resonant heavy-ion reactions

It has been noticed that a distinct resemblance exists at large angles among angular distributions measured for reaction channels at the energies of some resonance-like structures in the ¹²C+¹²C and ¹⁴C+¹⁶O systems. It is pointed out that such forms are typical of a diffraction pattern of a broad band of coherent partial waves. Received: 5 October 1998 / Revised version: 8 December 1998     

Size evolution and photoluminescence of silicon nanocrystallites in evaporated SiOx thin films upon thermal processing

Silicon suboxide thin films have been fabricated by physical vapor deposition of silicon monoxide in vacuum at controlled oxygen partial pressure. These films undergo a phase separation into silicon- and oxygen-enriched regions upon thermal processing. At temperatures around 900 °C, the onset of Si nanocrystallite formation is observed, regardless of film stoichiometry. With increasing initial oxygen content of the films, the mean size of created nanocrystallites decreases whereas the corresponding photoluminescence emission blueshifts. The photoluminescence intensity increases with increasing annealing temperature up to 1050 °C. Upon resonant excitation at low temperatures, the photoluminescence exhibits phonon replica signature. Therefore, the emission may be attributed to excitonic recombination in the nanocrystallites. Received: 3 July 2001 / Accepted: 6 August 2001 / Published online: 17 October 2001     

Growth of GaN single crystals with extremely low dislocation density by two-step dislocation reduction

We have discovered a mechanism which can significantly reduce the dislocation density during the growth of GaN single crystals in the Na flux method. The significant reduction of the dislocation density occurs in the later stage of LPE growth, rather than solely at the seed-LPE interface for which we have already reported evidence indicating the presence of bundling dislocations. The two-step dislocation reduction is the key in achieving extremely low dislocation density using this method.     

Defects in III–V semiconductor surfaces

This work reports the measurement of the nano-scale physical properties of surface vacancies and the extraction of the types and concentrations of dopant atoms and point defects inside compound semiconductors, primarily by cross-sectional scanning tunneling microscopy on cleavage surfaces of III–V semiconductors. The results provide the basis to determine the physical mechanisms governing the interactions, the formation, the electronic properties, and the compensation effects of surface as well as bulk point defects and dopant atoms. Received: 10 May 2001 / Accepted: 23 July 2001 / Published online: 3 April 2002     

Adsorption of L-Alanine on Cu（111） Studied by Scanning Tunnelling Microscopy

The adsorption of L-alanine on Cu（111） surface is studied by means of scanning tunnelling microscopy under ultra-high vacuum conditions. The results show that the adsorbates are chemisorbed on the surface, and can form a two-dimensional gas phase, chain phase and solid phase, depending on deposition rate and amount. The adsorbed molecules can be imaged as individual protrusions and parallel chains in gas and chain phases respectively. It is also found that alanine can form （2 × 2） superstructure on Cu（111） and copper step facet to （110） directions in solid phase. On the basis of our scanning tunnelling microscopic images, a model is proposed for the Cu（111）（2 ×2）-alanine superstructure. In the model, we point out the close link between （110）-direction hydrogen bond chains with the same direction copper step faceting.     

The effects of arsenic source contamination on doped GaAs grown by MBE

The presence of parts per million (ppm) levels of impurities in the low-temperature arsenic charge used in molecular beam epitaxy (MBE) is shown to have a dramatic effect on the quality of GaAs grown. Source charge impurities play a vital role in determining the apparent variation in reported doping behaviour in MBE:GaAs.     

NaCl islands decorated with 2D or 3D 3,4,9,10-perylene-tetracarboxylic-dianhydride nanostructures

The formation of PTCDA (3,4,9,10-perylene-tetracarboxylic-dianhydride) nanostrutures on Au(1 1 1)-() covered with NaCl islands has been studied using scanning tunneling microscopy (STM). Atomically resolved STM images show that NaCl grows as (1 0 0)-terminated layers on Au(1 1 1)-(). Local atomic hexagonal packing has also been observed in the NaCl(1 0 0) layer. At submonolayer NaCl coverage, PTCDA forms two-dimensional islands on the Au(1 1 1) surface and nucleate preferentially at the NaCl island step edges. When the Au surface is fully covered with NaCl layers, PTCDA molecules form three-dimensional molecular clusters decorating the step edges of NaCl layers.