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排序方式: 共有331条查询结果,搜索用时 11 毫秒
1.
J. E. Fischer E. Werwa P. A. Heiney 《Applied Physics A: Materials Science & Processing》1993,56(3):193-196
We have used both reflection-geometry and grazing-incidence-geometry X-ray scattering to study thin films of C60 evaporated onto mica substrates via a hot-wall technique. The growth mode yields close-packed C60 planes, which are parallel to the substrate surface and which exhibit out-of-plane correlation lengths of 850 Å. In the film plane the C60 is at best pseudo-epitaxial, with a 0.9° distribution of crystallite orientations, a 450 Å in-plane correlation length, and a 3.7% lattice mismatch, better than obtained by other thin film techniques but far from the accepted definition of single crystal thin film epitaxy. 相似文献
2.
General coordinate invariance and conformal invariance in nonrelativistic physics: Unitary Fermi gas
D.T. Son 《Annals of Physics》2006,321(1):197-224
We show that the Lagrangian for interacting nonrelativistic particles can be coupled to an external gauge field and metric tensor in a way that exhibits a nonrelativistic version of general coordinate invariance. We explore the consequences of this invariance on the example of the degenerate Fermi gas at infinite scattering length, where conformal invariance also plays an important role. We find the most general effective Lagrangian consistent with both general coordinate and conformal invariance to leading and next-to-leading orders in the momentum expansion. At the leading order the Lagrangian contains one phenomenological constant and reproduces the results of the Thomas-Fermi theory and superfluid hydrodynamics. At the next-to-leading order there are two additional constants. We express various physical quantities through these constants. 相似文献
3.
We investigated the morphological, structural and electronic properties of Pentacene thin films grown by vacuum thermal evaporation on different inert substrates at room temperature. The results of our AFM and STM analysis give an interplanar spacing of 1.54 nm corresponding to the (0 0 1) distance of the so-called “thin film phase”. The STS measurements show an HOMO-LUMO gap of 2.2 eV. 相似文献
4.
Scanning electron microscopy (SEM), Fourier transform infrared (FTIR) transmission, and Hall effect measurements were performed to investigate the structural, optical, and electrical properties of as-grown and in situ-annealed Hg0.7Cd0.3Te epilayers grown on CdTe buffer layers by using molecular beam epitaxy. After the Hg0.7Cd0.3Te epilayers had been annealed in a Hg-cell flux atmosphere, the SEM images showed that the surface morphologies of the Hg0.7Cd0.3Te thin films were mirror-like with no indication of pinholes or defects, and the FTIR spectra showed that the transmission intensities had increased in comparison to that of the as-grown Hg0.7Cd0.3Te epilayer. Hall-effect measurements showed that n-Hg0.7Cd0.3Te epilayers were converted to p-Hg0.7Cd0.3Te epilayers. These results indicate that the surface, optical, and electrical properties of the Hg1 − xCdxTe epilayers are improved by annealing and that as-grown n-Hg1 − xCdxTe epilayers can be converted to p-Hg1 − xCdxTe epilayers by in situ annealing. 相似文献
5.
We have studied hydrogen adsorption on the Ge(1 1 1) c(2 × 8) surface using scanning tunneling microscopy (STM) and angle-resolved photoelectron spectroscopy (ARPES). We find that atomic hydrogen preferentially adsorbs on rest atom sites. The neighbouring adatoms appear higher in STM images, which clearly indicates a charge transfer from the rest atom states to the adatom states. The surface states near the Fermi-level have been followed by ARPES as function of H exposure. Initially, there is strong emission from the rest atom states but no emission at the Fermi-level which confirms the semiconducting character of the c(2 × 8) surface. With increasing H exposure a structure develops in the close vicinity of the Fermi-level. The energy position clearly indicates a metallic character of the H-adsorbed surface. Since the only change in the STM images is the increased brightness of the adatoms neighbouring a H-terminated rest atom, we identify the emission at the Fermi-level with these adatom states. 相似文献
6.
N. Layadi P. Roca i Cabarrocas M. Gerri W. Marine J. Spousta 《Applied Physics A: Materials Science & Processing》1994,58(5):507-512
We combine the deposition of Hydrogenated amorphous Silicon (a-Si:H) by rf glow discharge with XeCl-excimer laser irradiation of the growing surface in order to obtain different kinds of silicon films in the same deposition system. In-situ UV-visible ellipsometry allows us to measure the optical properties of the films as the laser fluence is increased from 0 up to 180 mJ/cm2 in separate depositions. For fixed glow-discharge conditions and a substrate temperature of 250° C we observe dramatic changes in the film structure as the laser fluence is increased. With respect to a reference a-Si:H film (no laser irradiation) we observe at low laser fluences (15–60 mJ/cm2) that the film remains amorphous but demonstrates enchanced surface roughness and bulk porosity. At intermediate fluences (80–165 m/Jcm2), we obtain an amorphous film with an enhanced density with respect to the reference film. Finally, at high fluences (165–180 mJ/cm2), we obtain microcrystalline films. The in-situ ellipsometry measurements are complemented by ex-situ measurements of the dark conductivity, X-ray diffraction, and Elastic Recoil Detection Analysis (ERDA). Simulation of the temperature profiles for different film thicknesses and for three laser fluences indicates that crystallization occurs if the surface temperature reaches the melting point of a-Si:H ( 1420 K). The effects of laser treatment on the film properties are discussed by taking into account the photonic and thermal effects of laser irradiation.Presented at LASERION 93, Munich, June 21–23, 1993 相似文献
7.
S. Tosto A. Di Bartolomeo P. Di Lazzaro 《Applied Physics A: Materials Science & Processing》1996,63(4):385-389
This paper presents the surface microstructure of Ti and Ti6Al4V alloy irradiated with a high output energy XeCl ( = 308 nm) excimer laser. The treatments are carried out on both materials at two beam fluences and the effects of single- and multiple-pulse irradiation are compared. The results of the scanning electron microscopy and of the X-ray diffraction techniques suggest the possible influence of both time-behaviour and energy fluence of the laser pulse on the relative weight of the ablation rate and of the reaction product deposition rate at the sample surface. 相似文献
8.
I. Koenig E. Berdermann F. Bosch P. Kienle W. Koenig C. Kozhuharov A. Schröter H. Tsertos 《Zeitschrift für Physik A Hadrons and Nuclei》1993,346(2):153-168
We present the results obtained from a series of +–-coincidence measurements in heavy-ion collisions using the double-Orange-spectrometer at GSI. The collision systems U+U, U+Pb, and U+Ta were investigated at bombarding energies close to and slightly above (U+Ta) the Coulomb barrier. For all systems studied, very narrow (FWHM–20 keV) +– lines were observed in the sum-energy spectra, with kinetic energies ranging from 555 keV to 810 keV, superimposed on a continuous distribution mainly due to uncorrelated +– emission. Particularly in the U+Ta system, a pronounced sum-energy line appears at 634 keV, predominantly in deep-inelastic collisions. In some cases (e.g. U+Pb) the line characteristics is consistent with a two-body decay mode of an emitter which moves with the c.m. velocity of the colliding ions. However, other lines, and in particular the 634 keV line (U+Ta), exhibit a rather isotropical opening-angle distribution whereas their energy is unequally shared between positrons and electrons, thus being in clear disagreement with this scenario. In general, the data preclude an emission from the separated (moving) nuclei, and, in the latter cases, provide evidence that the e+e–-pair decay occurs in the vicinity of the Coulomb field of a third heavy (positively charged) partner having only a small transverse velocity (|v|<>Dedicated to Prof. B. Povh on the occasion of his 60th birthday 相似文献
9.
A.?N.?IvanovEmail author M.?Cargnelli M.?Faber H.?Fuhrmann V.?A.?Ivanova J.?Marton N.?I.?Troitskaya J.?Zmeskal 《The European Physical Journal A - Hadrons and Nuclei》2005,25(3):329-338
We argue that due to isospin and U-spin invariance of strong low-energy interactions the S-wave scattering lengths a
0
0 and a
1
0 of ˉN scattering with isospin I = 0 and I = 1 satisfy the low-energy theorem a
0
0 +3a
1
0 = 0 valid to leading order in chiral expansion. In the model of strong low-energy ˉN interactions at threshold (Eur. Phys. J. A 21, 11 (2004)) we revisit the contribution of the Σ(1750) resonance, which does not saturate the low-energy theorem a
0
0 +3a
1
0 = 0, and replace it by the baryon background with properties of an SU(3) octet. We calculate the S-wave scattering amplitudes of K-N and K-d scattering at threshold. We calculate the energy level displacements of the ground states of kaonic hydrogen and deuterium.
The result obtained for kaonic hydrogen agrees well with recent experimental data by the DEAR Collaboration. We analyse the
cross-sections for elastic and inelastic K-p scattering for laboratory momenta 70MeV/c < p
K < 150MeV/c of the incident K--meson. The theoretical results agree with the available experimental data within two standard deviations. 相似文献
10.
S.-J. Ding V. Zaporojtchenko J. Kruse J. Zekonyte F. Faupel 《Applied Physics A: Materials Science & Processing》2003,76(5):851-856
The interfacial bonding and mixing between evaporated aluminum and a vapor deposited Teflon AF (abbreviated to AF) film have
been investigated with X-ray photoelectron spectroscopy. Graphite carbon (C–C), and aluminum carbide (Al–C), oxide (Al–O–C)
and fluoride (Al–F) are formed when aluminum atoms are deposited on to the AF film. With increasing deposition of aluminum,
the concentrations of these newly formed components increase gradually. Moreover, in situ annealing results in remarkable
increases in the C–C, Al–C, Al–O–C and Al–F configurations and a decrease in metallic aluminum. No significant diffusion of
aluminum into the AF film was observed during the annealing. The Al compounds form a layer at the Al/AF interface that acts
as an adhesion promoter and diffusion barrier.
Received: 21 October 2002 / Accepted: 22 October 2002 / Published online: 15 January 2003
RID="*"
ID="*"Corresponding author. Fax: +49-431/880-6229, E-mail: sjding@yahoo.com 相似文献