Modulation depth of series SQUIDs modified by Josephson junction area

The superconducting quantum interference device(SQUID) amplifier is widely used in the field of weak signal detection for its low input impedance, low noise, and low power consumption. In this paper, the SQUIDs with identical junctions and the series SQUIDs with different junctions were successfully fabricated. The Nb/Al-AlO_x/Nb trilayer and input Nb coils were prepared by asputtering equipment. The SQUID devices were prepared by a sputtering and the lift-off method.Investigations by AFM, OM and SEM revealed the morphology and roughness of the Nb films and Nb/Al-AlO_x/Nb trilayer.In addition, the current–voltage characteristics of the SQUID devices with identical junction and different junction areas were measured at 2.5 K in the He~3 refrigerator. The results show that the SQUID modulation depth is obviously affected by the junction area. The modulation depth obviously increases with the increase of the junction area in a certain range. It is found that the series SQUID with identical junction area has a transimpedance gain of 58 ? approximately.     

Tunneling magnetoresistance of the double spin-filter junctions at nonzero bias

A recent theoretical estimation indicated that the NM/FI/FI/NM double spin-filter junction (DSFJ, here the NM and FI represent the nonmagnetic electrode and the ferromagnetic insulator (semiconductor) spacer, respectively) could have very high tunneling magnetoresistance (TMR) at zero bias. To meet the requirement in research and application of the magnetoresistance devices, we have calculated the dependences of tunneling magnetoresistance of DSFJ on the bias (voltage), the thicknesses of ferromagnetic insulators (semiconductors) and the average barrier height. Our results show that except its very high value, the TMR of DSFJ does not decrease monotonously and rapidly with rising bias, but increase slowly at first and decrease then after having reached a maximum value. This feature is in distinct contrast to the ordinary magnetic tunnel junction FM/NI/FM (FM and NI denote the ferromagnetic electrode and the nonmagnetic insulator (semiconductor) spacer, respectively), and is of benefit to the use of DSFJ as a magnetoresistance device.     

External electric field control in the charge qubits including three Josephson junctions

Based on the standard canonical quantization principle, this paper gives the quantization scheme for the charge qubits mesoscopic circuit including three Josephson junctions coupled capacitively. By virtue of the Heisenberg equation, the time evolution of the phase difference operators across the polar plates and the number operators of the Cooper-pairs on the island are investigated and the modification of the Josephson equation is discussed. The time evolution of the phase difference operators is analysed when the Josephson junctions are irradiated by the external electrical field, which is referred to as also the obtainable controlling parameter.     

Directed transport and complex dynamics of vortices in a Josephson junction network driven by modulated currents

Directed transport of vortices in a Josephson junction network (JJN) with structural disorder is studied using a numerical simulation. Using spatiotemporal modulation of driving currents, the directed transport of vortices occurs even in the presence of disorder under certain conditions. From the analyses of the current–voltage and local voltage characteristics, it is found that the collective motion of vortices has an importance for the occurrence of directed transport.     

等离子体浸没注入超低能注入掺杂研究

A plasma immersion ion implantation(PIII) system based on inductively coupled plasma(ICP) technology was designed. The PIII system had a cylindrical chamber, and a radio frequency(RF) power was used to sustain discharge and a pulsed voltage source was provided to bias the wafer. The RF power was coupled into chamber by a non-coplanar two-turn circular structure coil. A Langmuir probe was connected to the PIII system to diagnose the plasma parameters. The probe diagnosis indicated that plasma ion density of the system achieves 10¹⁷m^-3, the uniformity of the ion density along radial direction achieves 3.53%. Boron (B) and phosphorus (P) doping experiments were performed on the system. Results from second ion mass spectrum (SIMS) tests showed that the measured injection depth is about 10nm and the shallowest is 8.6 nm (at 10¹⁸cm^-3), the peak ion concentration is below the surface of the wafer, and the ion dose reaches above10¹⁵cm^-2 and the abrupt 2.5 nm/decade.     

热噪声对约瑟夫森结I-V特性及微波感应台阶的影响研究

采用数值仿真的方法研究了热噪声对约瑟夫森结I-V特性及微波感应台阶的影响。研究表明,热噪声导致约瑟夫森结的I-V特性曲线呈现"圆拱化",也使得微波感应台阶高度减小。得出了取不同约瑟夫森结临界电流和结电阻时,热噪声对台阶的影响规律     

物理实验中测温热电偶冷端补偿方法的改进

本文介绍了两种热电偶冷端温度补偿电路在物理实验测量中的应用及校准方法,对热电偶的工作原理、冷端温度补偿必要性作了说明,并详细介绍了冷端温度补偿过程．     

快速热退火对Co/Si0.85Geo.15肖特基结电学特性的影响

用离子束溅射技术分别在SiO2和单晶Si衬底上沉积了Si1-xGex和Co薄膜.在不同温度下,对Co/Si1-xGex肖特基结进行快速热退火处理(RTA),对处理后的样品进行了表面形貌和电学测量.发现退火温度升高,样品表面粗糙度变大,理想因子也变大,但对肖特基势垒高度(SBH)的影响很小.分析认为,随着退火温度的升高,...     

一维介观结链中电荷孤子的控制

研究了一维介观结链中的电势分布随各岛上门电压和电子数分布的变化关系,并发现在一个岛上加一个门电压会产生一个静电势孤子.通过调节门电压可以较好地控制静电势孤子的形状及其位置,从而达到对电荷孤子的有效控制. 关键词： 电荷孤子 介观结 单电荷隧穿