Dependences of spin polarization on the control parameters in the spin-polarized injection through the magnetic p-n junction

Effective spin-polarized injection from magnetic semiconductor (MS) to nonmagnetic semiconductor (NMS) has been highlighted in recent years. In this paper we study theoretically the dependence of nonequilibrium spin polarization (NESP) in NMS during spin-polarized injection through the magnetic p-n junction. Based on the theory in semiconductor physics, a model is established and the boundary conditions are determined in the case of no external spin-polarized injection and low bias. The control parameters that may influence the NESP in NMS are indicated by calculating the distribution of spin polarization. They are the doping concentrations, the equilibrium spin polarization in MS and the bias. The effective spin-polarized injection can be realized more easily by optimizing the above parameters.     

Ground state of a superconducting π ring array under external magnetic fields

The ground state of a two-dimensional square superconducting π ring array has been investigated. The circulating currents of the π ring array will spontaneously magnetize to the `antiferromagnetic' arrangement with directions of the nearest-neighbouring currents circulating oppositely in the absence of an external magnetic field. It is found that the external magnetic field could destroy the anti-parallel configuration effectively. The external magnetic field needed to destroy the anti-parallel configuration is related to the superconducting \pi ring's inductance parameter β=2\pi L I_c/\phi₀. For a small β the anti-parallel configuration, which is the lowest-energy ground state of the system, will be fully destroyed and changed to the configuration that the circulating currents have the same direction and parallel to the external magnetic field when the magnetic flux reaches \phi₀/4 in each ring. Moreover, the magnetic field needed to destroy the anti-parallel configuration will be very small when β is large enough.     

对半导体pn结接触电势的一个讨论

讨论了半导体pn结内建电场和接触电势的形成与可测性，回答了在半导体物理学pn结内容教学中学生经常会提出的一个似是而非的问题．从热力学第一定律、金属-半导体接触等不同角度详细解释了热平衡(零偏下)时pn结不可能对外输出电压和电流的原因．     

Collapse and revival of a single—Cooper—pair box in a single—mode quantized field

We study the quantum dynamics of a single-Cooper-pair box biased by a classical voltage and also irradiated by a single-mode quantized field. We demonstrate that under weak damping of the quantized field, the collapse-revival phenomena can exist in this system, and the oscillations of the collapse and revival depend sensitively on the initial state of the single-mode quantized field and the damping rate κ. We also demonstrate that this system can show the beats phenomena.     

p-n结二极管结区边界附近的交流电特性

基于p-n结二极管的理想工作状态的基本假定，推导了二极管在交流电下工作时其基区和p-n结分界面附近上的时间常数与二极管空间尺寸、扩散长度、载流子寿命和外加交流电频率等的依赖关系.结果发现高频和低频两种状态下二极管各类特征参量对时间常数的作用不一样.低频条件下，二极管的时间常数由材料本身来决定，与外加电流频率无关.高频情况下，时间常数则与半导体材料性质无关，只由外加交流电的频率来决定.     

热噪声对约瑟夫森结I-V特性及微波感应台阶的影响研究

采用数值仿真的方法研究了热噪声对约瑟夫森结I-V特性及微波感应台阶的影响。研究表明,热噪声导致约瑟夫森结的I-V特性曲线呈现"圆拱化",也使得微波感应台阶高度减小。得出了取不同约瑟夫森结临界电流和结电阻时,热噪声对台阶的影响规律     

物理实验中测温热电偶冷端补偿方法的改进

本文介绍了两种热电偶冷端温度补偿电路在物理实验测量中的应用及校准方法,对热电偶的工作原理、冷端温度补偿必要性作了说明,并详细介绍了冷端温度补偿过程．     

Analogue Between Dynamic Hamiltonian-Operators of a Mesoscopic Ring Carrying Persistent Current and a Josephson Junction

By making the analogy between the operator Hamiltonians of a mesoscopic ring carrying the persistent current and a Josephson junction we have introduced a phase operator and entangled state representation to establish a theoretical formalism for the ring system.     

磁性隧道结自旋极化电子的隧穿特性

铁磁金属间通过中间层的自旋极化电子隧穿产生的磁性耦合,在自旋电子器件中有许多潜在的应用.考虑由一平面磁性势垒层隔开的两铁磁性金属电极构成的磁性隧道结,针对中间层形成的矩形势垒,在近自由电子模型的基础上,计算零偏压下的隧穿电导、自旋极化率和隧穿磁阻比率,分析势垒层特性、分子场强弱、分子场相对取向等对隧道结自旋极化电子隧穿特性的影响.计算结果对自旋电子器件的设计具有一定的指导意义.