Dielectric Properties Investigation of Metal–Insulator–Metal (MIM) Capacitors

This study presents the construction and dielectric properties investigation of atomic-layer-deposition Al₂O₃/TiO₂/HfO₂ dielectric-film-based metal–insulator–metal (MIM) capacitors. The influence of the dielectric layer material and thickness on the performance of MIM capacitors are also systematically investigated. The morphology and surface roughness of dielectric films for different materials and thicknesses are analyzed via atomic force microscopy (AFM). Among them, the 25 nm Al₂O₃-based dielectric capacitor exhibits superior comprehensive electrical performance, including a high capacitance density of 7.89 fF·µm⁻², desirable breakdown voltage and leakage current of about 12 V and 1.4 × 10⁻¹⁰ A·cm⁻², and quadratic voltage coefficient of 303.6 ppm·V⁻². Simultaneously, the fabricated capacitor indicates desirable stability in terms of frequency and bias voltage (at 1 MHz), with the corresponding slight capacitance density variation of about 0.52 fF·µm⁻² and 0.25 fF·µm⁻². Furthermore, the mechanism of the variation in capacitance density and leakage current might be attributed to the Poole–Frenkel emission and charge-trapping effect of the high-k materials. All these results indicate potential applications in integrated passive devices.     

Optical studies of two dimensional gratings in fused silica, GE 124, and Foturan glasses fabricated using femtosecond laser pulses

Herein we present results on the femtosecond laser direct writing and optical characterization studies of two dimensional gratings in fused silica, GE 124, and Foturan^™ glasses. Varieties of structures were achieved with varying input energy and spatial orientation of the samples. Various characterization techniques including fluorescence spectroscopy, micro-Raman spectroscopy, and laser confocal microscopy were employed to analyze the structural and physical modifications at the focal volume resulting in change of refractive index. Diffraction efficiencies of 9–12% were observed from the grating structures. A broad-band emission was observed in the laser-modified region of the Foturan glass. The obtained results are analyzed in the light of recent work in similar glasses and exploring the applications of such structures in the fields of photonics.     

对称相位函数掩模化的研究

本文对各种连续对称相位函数及其特性进行了分析,讨论了相位函数的2π调制、2^N和N-1法量化等问题及数据处理过程,提出二元衍射元件CIF(Caltech Intermediate Form)格式掩模数据的生成方法,并建立了实用软件,为激光直写技术实现二元衍射光学元件制作提供了有效的手段.     

一种基于激光直写的水浊度传感结构

提出并制作了一种基于激光照射改变折射率方法的光度比浊度传感单元,综合了导波光学及检测相关知识原理.以UV光敏树脂为基底材料,采用“气体干法”除胶及分步固化的方法获得了该芯片化结构.传感器整个制作过程仅仅需要7~8 min因而使本方法具有很高的效率.由直写成型的单元组建传感系统对标准悬浊液样品进行了实验测试,所得的相关数据在SISO算法神经元网络系统中进行处理,获得了传感器浊度与对应散射系数的关系曲线.通过试剂检验的方法得知实际相对误差在5%左右.     

Effect of mechanical force on domain switching in BiFeO_3 ultrathin films

Ferroelectric polarization can be switched by an external applied electric field and may also be reversed by a mechanical force via flexoelectricity from the strain gradient.In this study,we report the mechanical writing of an epitaxial BiFeO3(BFO)thin film and the combined action of an applied mechanical force and electric field on domain switching,where the mechanical force and electric field are applied using the tip of atomic force microscopy.When the applied force exceeds the threshold value,the upward polarization of the BFO thin film can be reversed by pure mechanical force via flexoelectricity;when an electric field is simultaneously applied,the mechanical force can reduce the coercive electric field because both the piezoelectricity from the homogeneous strain and the flexoelectricity from strain gradient contribute to the internal electric field in the film.The mechanically switched domains exhibit a slightly lower surface potential when compared with that exhibited by the electrically switched domains due to no charge injection in the mechanical method.Furthermore,both the mechanically and electrically switched domains exhibit a tunneling electroresistance in the BFO ferroelectric tunnel junction.     

电子束蒸发在不同Ar气氛下外退火制备MgB2超导薄膜

制备高质量的MgB2薄膜是实现MgB2超导电子器件应用的前提和基础.我们用电子束蒸发B膜和Mg/B多层膜为前驱然后后退火的方法,分别在高温区(~900℃)和中温区(~750℃)成功获得了MgB2超导薄膜.改变退火的Ar气压条件,采用B膜前驱退火的样品Tc可达到38K以上,转变宽度0.3K.Mg/B多层膜的结果尽管Tc稍低(Tc~35K),但薄膜表面更加均匀,且避免了高温下Mg蒸汽污染的问题.对于两种前驱退火中观察到的完全不同的退火气压影响,我们认为是与其各自的超导成相过程相联系的,在此基础上我们对退火气压效应给出了自己的分析和解释,为今后进一步细致研究退火过程中的薄膜生长机制提供了参考.     

细电子束Cockcroft–Walton加速器的研究

细电子束由加速器通过电子枪发射电子,经电子透镜及偏转射向目标靶.以SDS-3电子束曝光机为基础,完成了电子束Cockcroft-Walton加速器噪声抑制的最优状态实验.系统为加速器调整电路提供一个正比于输入电压的电流.补偿放大器是由一个主放大器和一个辅助放大器组成,辅助放大器消除了主放大器自身的失调漂移.文中介绍了复合调整式Cockcroft-Walton加速器的总体设计方案,给出了实现加速器高稳定度的关键技术措施.从加速器总输出中滤去噪声信号,获得稳定的输出电压,并使电子束曝光机刻蚀出的图形质量和线条分辨率都得到了提高     

Fabrication of fluorinated polyimide optical waveguides by micropen direct writing technology

A novel and cheap direct writing method based on the micropen has been developed to fabricate fluorinated polyimide stripe optical waveguides on Si/SiO₂ wafers. The overall design, starting material, micropen direct writing system and fabrication processes of the stripe optical waveguides are presented. The effects of the key direct writing parameters, such as the tip-to-substrate distance, extrusive gas pressure, writing speed and viscosity of the polyamic acid, on the dimension and morphology of the stripe optical waveguides are discussed in detail. After deposition by the micropen system and baking process, the fluorinated polyimide stripe optical waveguides with good morphology and surface quality can be fabricated using the optimal parameters. The propagation losses at the wavelength of 1.55 μm are in the range of 1.4-3.5 dB cm⁻¹ as characterized by different length combinations of the strip optical waveguides.     

Embedded dots inside glass for optical film using UV laser of ultrafast laser pulse

Microstructures are usually fabricated on the surface of optical sheets to improve the optical characteristics. In this study, a new fabrication process with UV (ultraviolet) laser direct writing method is developed to embed microstructures inside the glass. Then the optical properties of glass such as reflection and refraction indexes can be modified. Single- and multi-layer microstructures are designed and embedded inside glass substrate to modify the optical characteristics. Both luminance and uniformity can be controlled with the embedded microstructures. Thus, the glass with inside pattern can be used as a light guide plate to increase optical performance. First, an optical commercial software, FRED, is applied to design the microstructure configuration. Then, UV laser direct writing with output power 2.5-2.6 W, repetition rate 30 kHz, wave length: 355 nm, and pulse duration 15 ns is used to fabricate the microstructures inside the glass. The effect of dot pattern in the glass such as the dot pitch, the layer gap, and the number of layer on the optical performance is discussed. Machining capacity of UV laser ranges from micron to submicrometer; hence with this ultrafast laser pulse, objectives of various dimensions such as dot, line width, and layers can be easily embedded in the glass by one simple process. In addition, the embedded microstructures can be made with less contamination. Finally, the optical performance of the glasses with various configurations is measured using a Spectra Colorometer (Photo Research PR650) and compared with the simulated results.     

离子微束技术及其多学科应用

通过微米孔准直或电磁聚焦技术可将加速器产生的MeV离子束形成微米尺寸的离子束斑(微束), 从而用来研究固体和生物样品的微米空间分辨的材料信息和辐照响应。 结合MeV离子微束的发展历史综述了微束技术和跨学科应用, 包括利用微束开展具有空间分辨的离子束分析、 单粒子效应、 微纳加工和细胞辐射响应等研究。 介绍了中国科学院近代物理研究所的高能重离子微束辐照装置, 该装置成功地将总能量为1 GeV的C离子在大气中聚焦为1 μm×2 μm的微米束斑。 Beam of MeV ions from particle accelerators can be confined by collimators or focused by electrical/magnetic quadruples into micrometer size, and this microbeam can be used to obtain spatial information or radiation effect in solids and biological samples. This paper reviews the technical developments and the multi disciplinary applications of microbeam, including ion beam analysis, single event effect in semiconductor devices, proton beam writing and cellular response to targeted particle irradiations. Finally, the high energy heavy ion microbeam facility at the Institute of Modern Physics of Chinese Academy of Sciences is introduced, which has successfully focused 1 GeV Carbon ions into a beam spot of 1 μm×2 μm in air.