高分子中激子和双激子的极化率(解析计算)

高分子的电致发光是载流子在电场中的输运和复合,为了阐明它的机理,需要研究高分子中激子的极化性质,首先求得了激子和双激子的解析解,然后用线性响应的Green函数方法计 算了两者的极化率,解析地证明了一个重要的结论：激子的极化率为正,双激子的极化率为负.从激子跃迁至双激子,高分子的电偶极矩要反转方向. 关键词： 激子 双激子 解析解 负极化率     

共轭高分子中激子演化过程的非绝热动力学研究

有机共轭高分子受光激发或被电荷掺杂后可能会产生各种激发状态的激子,激子的演化过程对有机发光光谱有着至关重要的影响.通过非绝热动力学演化的方法模拟了受光激发后有机高分子中激子驰豫的动力学过程,结果表明高激发态激子不稳定,由于电声耦合作用,高激发态激子会持续向低激发态激子演化,同时,低激发态激子的复合发光会发生红移.稳定的激子复合发光光谱中,基态激子发光强度最大,可高达70-80%;第一激发态激子及其它激发态激子发光强度的总和不超过20%.     

Influence of surface charges on the emission polarization properties of single CdSe/CdS dot-in-rods

We report an experimental investigation of the influence of surface charges on the emission polarization properties of single CdSe/CdS dot-in-rods (DRs), which is important for their polarization-based practical applications. By covering the single DRs with N-type semiconductor indium tin oxide (ITO) nanoparticles, the surface of single DRs is charged by ITO through interfacial electron transfer. This is confirmed by the experimental observations of the reduced photoluminescence intensities and lifetimes as well as the suppressing blinking. It is found that the full width at half maximum of histogram of polarization degrees of the single DRs is broadened from 0.24 (on glass) to 0.41 (in ITO). In order to explain the exprimental results, the band-edge exciton fine structure of single DRs is calculated by taking into account the sample parameters, the emission polarization, and the surface charges. The calculation results show that the level ordering of the emitting states determines the polarization degrees tending to increase or decrease under the influence of surface electrons. The surface electrons can induce an increase in the spacing between the emitting levels to change the populations and thus change the polarization degrees. In addition, different numbers of surface electrons may randomly distribute on the long CdSe/CdS rods, leading to the heterogeneous influences on the single DRs causing the broadening of polarization degrees also.     

Nondoped blue fluorescent OLED based on cyanophenanthrimidazole‐styryl‐triphenylamine/carbazole materials

New 2‐(4′‐9H‐carbazole‐9‐yl)‐styryl‐1H‐phenathro[9,10‐d]imidazole‐1‐yl)benzonitrile (SPICN‐Cz) and 4‐(2‐(4‐(diphenylamino)phenyl‐styryl‐1H‐phenathro[9,10‐d]imidazole‐1‐yl)benzonitrile (SPICN‐TPA) have been synthesised, and their photophysical, electrochemical, and electroluminescent properties were analysed in comparison with their cyano‐free parent compounds, SPI‐Cz, and SPI‐TPA. Solvatochromic effects show the transformation of an excited state character from locally excited (LE) state to charge transfer (CT) state. Using time‐dependent density functional theory calculation, the excited state properties of these donor‐acceptor blue emissive materials have been analysed. Their excited state properties have been tuned by replacing the strong donor triphenylamine to weak donor carbazole to achieve the combination of high photoluminance efficiency locally excited (LE) component and high exciton‐utilizing CT component in one excited state. Hybridization processes between LE and CT components of SPICN‐Cz and SPICN‐TPA in the emissive state have been discussed. The nondoped organic light emitting diode device based on SPICN‐Cz exhibit better electroluminescent performances than those of SPICN‐TPA–based device: high external quantum efficiency of 2.58 %, current efficiency of 2.90 cd A^‐1, and power efficiency of 2.26 lm W^‐1 with Commission Internationale de l'Éclairage (CIE) coordinates of (0.15, 0.12). The excited state modulation and the composition of LE and CT states in the donor‐acceptor system could be useful to design low‐cost, high‐efficiency fluorescent organic light emitting diode materials.     

退火对单层二硫化钼荧光特性的影响

单层二硫化钼是继石墨烯后的一种新型二维材料. 它是一种直接带隙半导体, 具有优异的光电特性, 从而受到人们的广泛关注. 之前的研究报道过单层二硫化钼在氩气中退火后可以提升其A激子峰的荧光强度, 但我们发现, 空气中退火较氩气退火效果更为明显. 本文重点研究了在空气中退火对二硫化钼的荧光特性的影响. 不同条件下制备的单层二硫化钼样品, 经过在空气中退火处理后, 荧光峰位均发生了蓝移, 荧光强度提升了一个数量级. 我们认为, 这是由于空气退火造成二硫化钼缺陷的形成, 大量氧气分子被缺陷束缚并发生电荷转移. 氧气分子充当受主的角色, 起着P型掺杂的作用. 电荷的抽取造成二硫化钼的负电激子减少, 中性激子增多, 提升了其荧光量子效率. 我们在对照实验中发现, NH₃吸附在二硫化钼表面时, 荧光强度下降, 峰位红移, 这是由于NH₃分子充当施主的角色, 造成负电激子增多, 中性激子减少. 本文为提高单层二硫化钼的荧光量子效率提供了一种简单有效的方法.     

Visualization of space charge field effect on excitons in a GaAs quantum dot by near-field optical wavefunction mapping

Near-field photoluminescence (PL) imaging spectroscopy was used to investigate multi-exciton and charged-exciton states confined in a single GaAs interface fluctuation quantum dot. We determined the origin of peaks in the PL spectra by employing a wavefunction mapping technique. We observed distortion of the exciton wavefunction due to the electric field produced by an excess electron at a nearby confined state. Near-field wavefunction mapping was demonstrated to be a powerful tool for visualizing the local environment, which affects the emission properties of quantum dots.     

Size Effect of a Negatively Charged Exciton in a Two-Dimensional Quantum Dot

In this paper we study a negatively charged exciton （NCE）, which is trapped by a two-dimensional （2D） parabolic potential. By using matrix diagonalization techniques, the correlation energies of the low-lying states with L=0, 1, and 2 are calculated as a function of confinement strength. We find that the size effects of different states are different. This phenomenon can be explained as a hidden symmetry, which is originated purely from symmetry. Based on symmetry, the features of the low-lying states are discussed in the influence of the 2D parabolic potential well. It is found that the confinement may cause accidental degeneracies between levels with different low-excited states. It is shown that the effect of quantum confinement on the binding energy of the heavy hole is stronger than that of a light hole.     

Equilibrium and pre-equilibrium emissions in proton-induced reactions on <Superscript>203,205</Superscript>Tl

In this study, the excitation functions for the reactions ²⁰³Tl(p, n)²⁰³Pb, ²⁰⁵Tl(p, 3n)²⁰³Pb, ²⁰³Tl(p, 2n)²⁰²Pb, ²⁰⁵Tl(p, 4n)²⁰²Pb, ²⁰³Tl(p, 3n)²⁰¹Pb, ²⁰⁵Tl(p, 5n)²⁰¹Pb, ²⁰³Tl(p, 4n)²⁰⁰Pb and ²⁰⁵Tl(p, 6n)²⁰⁰Pb have been calculated using pre-equilibrium and equilibrium reaction mechanisms. Calculated results based on hybrid model, geometry-dependent hybrid model and cascade-exciton model have been compared with the experimental data.      

有机场致发光中能带模型与分子理论的讨论

在有机场致发光中,能带模型及分子理论从20世纪就存在尖锐的矛盾。在分层优化方案中,经SiO₂加速后的电子能量可以到达10eV,这足以激发发光材料发光,将分层优化方案应用到有机场致发光材料中。发现了固态阴极射线发光(SSCL),经过对它的交叉证明、普适性的验证,肯定了固态阴极射线的发光确实是在发光二极管,无机及有机场致发光之外的一种完全新型的电场诱导的发光。SSCL的特征是在它的光谱中出现短波发光峰,实验证明长波发光峰的减弱是由于电场离化效应。研究了这种效应出现的电压阈值并和SSCL的短波峰出现的电压相比,发现短波峰的出现是在激子的电场离化之后,从而找出了电子处于局域态与扩展态的分水岭,解释了在有机场致发光中能带模型和分子理论并不矛盾,只是适用的条件不同。激子的离化是随电场强度而渐进的变化,因此会有一个两种过程并存的范围。