错位光纤干涉激光谱结合BP神经网络的温度传感研究

在分析不同温度时单模错位光纤干涉光谱对应波长的条件下,搭建三层BP神经网络模型对温度传感进行研究,解决了常规光纤测温系统复杂和精度不高的问题。对建立的网络模型参数进行探讨,将采集的激光波长与对应的温度数据,经BP神经网络训练,对比得到最佳网络结构,达到在训练完成的网络输入层输入激光波长值时,便可在输出层得到对应的温度预测值。结果证明,实验输出的预测温度值与实际温度值之间表现出明显的相关性,即预测值能够逼近实测值。温度校正和预测相关系数分别达到0.999 61和0.979 27,校正标准误差与预测标准误差分别为0.017 5和0.144 0,得到预测集的平均相对误差为0.17%,剩余预测误差RPD可达到5.258 3,RPD大于3.0,说明定标效果良好,所建模型可用于实际的检测。另外,将该算法用于了带校正的双耦合结构单模错位光纤测温系统中,结果表明BP神经网络方法能够较好的处理错位光纤测温系统中激光光谱数据和温度之间的非线性关系,预测温度值与实测温度值之间的相关度为0.996 58,得到预测温度值与实际温度值之间平均相对误差为0.63%,从而提高了光纤测温传感器的精度和稳定性,同时也验证了该算法在光纤传感上的可行性,也为错位光纤的压力、曲率等其他物理量传感的精确测量提供了新思路。     

Size effects in generalised continuum crystal plasticity for two-phase laminates

The solutions of a boundary value problem are explored for various classes of generalised crystal plasticity models including Cosserat, strain gradient and micromorphic crystal plasticity. The considered microstructure consists of a two-phase laminate containing a purely elastic and an elasto-plastic phase undergoing single or double slip. The local distributions of plastic slip, lattice rotation and stresses are derived when the microstructure is subjected to simple shear. The arising size effects are characterised by the overall extra back stress component resulting from the action of higher order stresses, a characteristic length l_c describing the size-dependent domain of material response, and by the corresponding scaling law lⁿ as a function of microstructural length scale, l. Explicit relations for these quantities are derived and compared for the different models. The conditions at the interface between the elastic and elasto-plastic phases are shown to play a major role in the solution. A range of material parameters is shown to exist for which the Cosserat and micromorphic approaches exhibit the same behaviour. The models display in general significantly different asymptotic regimes for small microstructural length scales. Scaling power laws with the exponent continuously ranging from 0 to −2 are obtained depending on the values of the material parameters. The unusual exponent value −2 is obtained for the strain gradient plasticity model, denoted “curl H^p” in this work. These results provide guidelines for the identification of higher order material parameters of crystal plasticity models from experimental data, such as precipitate size effects in precipitate strengthened alloys.     

Travelling wave solutions for a quasilinear model of field dislocation mechanics

We consider an exact reduction of a model of Field Dislocation Mechanics to a scalar problem in one spatial dimension and investigate the existence of static and slow, rigidly moving single or collections of planar screw dislocation walls in this setting. Two classes of drag coefficient functions are considered, namely those with linear growth near the origin and those with constant or more generally sublinear growth there. A mathematical characterisation of all possible equilibria of these screw wall microstructures is given. We also prove the existence of travelling wave solutions for linear drag coefficient functions at low wave speeds and rule out the existence of nonconstant bounded travelling wave solutions for sublinear drag coefficients functions. It turns out that the appropriate concept of a solution in this scalar case is that of a viscosity solution. The governing equation in the static case is not proper and it is shown that no comparison principle holds. The findings indicate a short-range nature of the stress field of the individual dislocation walls, which indicates that the nonlinearity present in the model may have a stabilising effect. We predict idealised dislocation-free cells of almost arbitrary size interspersed with dipolar dislocation wall microstructures as admissible equilibria of our model, a feature in sharp contrast with predictions of the possible non-monotone equilibria of the corresponding Ginzburg-Landau phase field type gradient flow model.     

An analysis of exhaustion hardening in micron-scale plasticity

The rate-dependent behavior of micron-scale model planar crystals is investigated using the framework of mechanism-based discrete dislocation plasticity. Long-range interactions between dislocations are accounted for through elasticity. Mechanism-based constitutive rules are used to represent the short-range interactions between dislocations, including dislocation multiplication and dislocation escape at free surfaces. Emphasis is laid on circumstances where the deformed samples are not statistically homogeneous. The calculations show that dimensional constraints selectively set the operating dislocation mechanisms, thus giving rise to the phenomenon of exhaustion hardening whereby the applied strain rate is predominantly accommodated by elastic deformation. When conditions are met for this type of hardening to take place, the calculations reproduce some interesting qualitative features of plastic deformation in microcrystals, such as flow intermittency over coarse time-scales and large values of the flow stress with no significant accumulation of dislocation density. In addition, the applied strain rate is varied down to 0.1 s⁻¹ and is found to affect the rate of exhaustion hardening.     

The solid angle and the Burgers formula in the theory of gradient elasticity: Line integral representation

A representation of the solid angle and the Burgers formula as line integral is derived in the framework of the theory of gradient elasticity of Helmholtz type. The gradient version of the Eshelby–deWit representation of the Burgers formula of a closed dislocation loop is given. Such a form is suitable for the numerical implementation in 3D dislocation dynamics (DD).     

Investigation of the crystallization kinetics of cyclotetramethylenetetranitramine from nitric acid by microcalorimetry

The total heat produced and the rate of heat production during the crystallization of cyclotetramethylenetetranitramine (HMX) from nitric acid are measured using a conduction calorimeter. The data of thermograms of HMX are treated based on the dislocation theory model. The results show that the crystal growth process of HMX accords with the dislocation theory.     

Computer simulation of the vacancy defects interaction with shuffle dislocation in silicon

The interactions between the 60^° shuffle dislocation and two different types of vacancy defects in silicon are separately studied via the molecular dynamics simulation method. The Stillinger–Weber potential is used to describe the atomic interactions. The results show that the dislocation slip velocity will decrease due to the interaction with the vacancy cluster (V ₆). The simulation also reveals that the divacancy will be absorbed by the dislocation. Meanwhile, a climbing of the dislocation occurs during their interactions. However, the divacancy has little effect on the dislocation slip velocity. Based on the above results, the decrease in threading dislocation density in SiGe/Si heterostructures with the use of low-temperature Si buffer layer may be explained.     

Preferential etching of ion-bombarded GaAs

Ion bombardment of GaAs above fluences of the order of 2 × 10¹³ 400-keV Xe-ions/cm² produces a highly strained surface which is elevated several hundred Angstroms above the adjacent masked surface. The irradiated area etches rapidly to yield circular etch pits ～ 0.3 μ in depth and 0.2 μ in diameter. At lower fluences, observations show much less expansion, slower crystalline etching, and some evidence of triangular etch pits and slip planes. These results are attributed to expansion in the implanted layer which results in high surface strain and the generation of dislocations to accommodate the mismatch of lattice parameters.