二极管泵浦Nd:YAG棒双通放大器技术

二极管泵浦NdYAG棒双通放大器采用两个峰值功率6.5 kW激光泵浦模块作为泵浦源.每个激光泵浦模块由81个二极管激光器组成,NdYAG棒直径为6 mm,Nd掺杂质量分数1%.在两个封装方式和结构一致的激光泵浦模块之间采用光学像传递和插入90°石英旋转片进行退偏补偿.在重复频率400 Hz,谐振腔输出单脉冲能量6 mJ时,双通输出400 mJ,激光器光-光转换效率为12.3%,光束质量4.6,脉宽15 ns.     

高功率二极管激光器失效特性研究

利用统计分析手段,对高功率二极管激光器封装中各工艺环节引起器件失效的原因进行了分析和归类.根据几种失效模式的分析结果,焊接空隙、结短路、腔面退化是引起高功率DL失效的主要模式,针对高功率二极管激光器失效的主要模式,对焊料沉积夹具及焊接工艺参数进行了改进和优化,大大提高了封装工艺水平,使封装的器件成品率由原来的77%提高到了85%以上.     

“强光一号”等离子体断路开关及负载的数值计算

 等离子体断路开关（POS）是“强光一号”加速器产生短脉冲γ射线的关键器件之一。应用POS融蚀模型分析了“强光一号”加速器POS与二极管系统的基本工作过程，通过该模型计算获得了POS与二极管系统的总电流以及电子束电流，计算结果与实验结果吻合较好。计算结果表明，“强光一号”POS在工作时并未达到完全磁绝缘状态，其阻抗最终为21.5 Ω，约有60％总电流在二极管负载导通时流过POS，且融蚀模型对POS阻抗增长预测偏高，但由于电流变化较大，二极管负载电压仍能达到4.5 MV左右。     

Determination of line strengths for selected transitions in the v2 band relative to the v1 and v5 bands of H2CO

The spectral line strengths in the v₂ band of H₂CO (segments spanning 1720-) have been determined relative to two sets of spectral line groups in the v₁ and v₅ band, using tunable diode laser spectroscopy. Simultaneous detection using a dual-diode instrument with a absorption cell was employed to assure identical H₂CO column density for the two spectral regions. The results in the selected regions of this study are in good agreement with the line positions and the relative intensities specified in an unpublished complete line listing for the v₂ band prepared by Linda Brown (see full text for reference). Based upon measurements of individual groups of spectral lines in the P, Q and R branches, the absolute band strength has been determined to be .     

High-power continuous-wave operation of a diode-pumped laser at

The continuous-wave laser properties of an efficient diode-pumped Nd:GdVO₄ crystal operating at formed with a simple plane-concave cavity have been studied. With the incident pump power of 21 W, an output power of 6.9 W was obtained, giving an optical conversion efficiency of 32.8% and a slope efficiency of 35.3%. The laser characterization of two different Nd³⁺-doped concentration of Nd:GdVO₄ crystals were studied.     

Line profile study with tunable diode laser spectrometers

In this paper, we present the different theoretical line profiles, which can be used to describe a shape of molecular transitions in dilute gases: the Voigt, Galatry, Rautian and speed dependence models. We discuss their limitations and their advantages, and present for illustration different comparisons of model results with experimental data obtained with several diode laser spectrometers suitable for precise line shape measurements.     

欠匹配二极管有效电流评估

 介绍了一种基于Creedon磁绝缘层流理论，预测磁绝缘传输线（MITL）中反射波前沿经过后由电子再俘获引起MITL工作点变化的方法。当二极管相对于MITL欠匹配时，如果MITL前行波工作点和二极管阻抗已知，该方法可以定量求解反射波前沿经过后MITL的阴极电流，进而得到二极管中用于产生X射线的有效电流。与PIC模拟对比表明：该方法具有较高的准确性，可用来评估近轴二极管、磁浸没式二极管等负载用于产生X射线的最大有效电流。     

利用LED的投影系统光源设计

设计了利用多颗LED(Light Emitting Diode,发光二极管)阵列组成的扩展面光源.经过合理的聚光设计使之符合某些投影设备对亮度要求不是很高,但结构紧凑、性能稳定、使用寿命长的要求.结合数学建模和软件模拟的方式设计了一种小巧的反光杯,利用反光杯把LED近180°的发散光束汇聚到60°左右;然后再用一一对应的透镜阵列汇聚为平行光;最后采用柯勒照明方式把较大的面光源阵列汇集到LCD投影屏幕上,从而达到了较高亮度且具有很高均匀性的目的.     

Optimization of facet coating for highly strained InGaAs quantum well lasers operating at 1200 nm

The optical output power of a laser diode can be enhanced by anti-reflection (AR) and high-reflection (HR) facet coatings, respectively, at the front and back facet. AR and HR coatings also serve the purpose of protection and passivation of laser diode facets. In this work, we have designed and optimized a single layer λ/4 thick Al₂O₃ film for the AR coating and a stack of λ/4 thick Al₂O₃/λ/4 thick Si bi-layers for the HR coating for highly strained InGaAs quantum-well edge emitting broad area (BA) laser diodes. Effect of the front and back facet reflectivities on output power of the laser diodes has been studied. The light output versus injected current (L–I characteristics) measurements were carried out on selected devices before and after the facet coatings. We have also carried out the numerical simulation and analysis of L–I characteristics for this particular diode structure. The experimental results have been compared and verified with the numerical simulation.     

Suppression of Q-switching instabilities in broadened-waveguide monolithic mode-locked laser diodes

It is predicted theoretically that broadening the optical confinement layer in monolithic mode-locked semiconductor lasers may suppress Q-switching instability, by increasing the carrier transport time, and lead to emission of shorter, more stable optical pulses.